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981.
982.
2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method 相似文献
983.
984.
Composite chiral materials are realized by embedding large numbers of handed inclusions within a host material. A computational methodology is presented whereby the effective constitutive parameters of artificial chiral materials are computed while accounting for all self and mutual interactions among the inclusions. This technique combines a full-wave, Monte-Carlo scattering solution for randomly oriented inclusions together with an analytical solution for the scattering by a canonically-shaped body having a properly chosen constitutive model. It is believed that the effective constitutive parameters shown in this paper are the first full-wave computation of these quantities to appear in the literature 相似文献
985.
986.
987.
Bao X. Dhliwayo J. Heron N. Webb D.J. Jackson D.A. 《Lightwave Technology, Journal of》1995,13(7):1340-1348
Results are reported from recent research on the use of the Brillouin gain/loss mechanism for distributed sensing. A theoretical model of the interaction of the pulsed and CW beams is described and compared with experiments. Results from a system with a 51 km sensing length are presented. We finally investigate issues related to the variation within the sensing fiber of the polarizations of the two beams 相似文献
988.
Hillmer H. Grabmaier A. Zhu H.-L. Hansmann S. Burkhard A. 《Lightwave Technology, Journal of》1995,13(9):1905-1912
We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision. The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 nm without wavelength gaps and high side mode suppression ratio 相似文献
989.
This paper describes a soft switching active snubber for an IGBT operating in a single switch unity power factor three-phase diode rectifier. The soft switching snubber circuit provides zero-voltage turn-off for the main switch. The high turn-off losses of the IGBT due to current tailing are reduced by zero-voltage switching. This allows the circuit to be operated at very high switching frequencies with regulated DC output voltage, high quality input current and unity input power factor. Simulation and experimental results are included 相似文献
990.