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71.
Indium phosphide is one of the most promising candidates among the available III-V semiconducting compounds for the development of MIS technology. This is based on the availability of InP substrates and the relatively large band gap. Before the deposition of the insulator, the InP surface must be treated and well passivated (Surf Interface Anal 20 (1993) 803; J Appl Phys 67 (1990) 4173). We have shown that a InSb buffer layer can reduce the phosphorus atom migration and the concentration of defects at the interface. We have studied and characterized electrically two series of substrates using p-type InP, the first one with thin and the second with thick insulator films. The results obtained show clearly the reduction of the defects in the thicker structures protected by the InSb buffer layer.  相似文献   
72.
A monolayer model treated by statistical physics by means of the grand canonical ensemble has been developed, describing PCT isotherms for absorption of hydrogen by LaNi3.6Mn0.3Al0.4Co0.7 alloy. This model presents a high correlation with the experimental results. The experimental absorption isotherms are fitted at three temperature different (T = 293 K to T = 313 K). The physicochemical parameters involved in the model were determined from the experimental isotherms by numerical simulation. These parameters, such as two numbers of absorbed atoms per site n1 and n2, two receptor site densities N1M and N2M, and two energetic parameters, P1 and P2 are discussed in relationship with absorption process. The different thermodynamic functions which govern the absorption mechanism such as entropy (Sa), free enthalpy of Gibbs (G) and internal energy (Eint) are derived by statistical physics model calculations.  相似文献   
73.
Wireless Networks - Wireless sensor networks consist of a large number of nodes deployed randomly in an area of interest. Theses nodes have sensing, computation, and wireless communications...  相似文献   
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