Transition metals in human cancer II

Many of the trace metals are associated with enzymes involved in vital physiological roles. It would therefore seem reasonable to expect alterations in the levels of certain elements to be associated with cancer. Secondly, their levels would indicate whether or not they have a direct influence on the proton spin—lattice relaxation time (T₁), as determined by pulsed nuclear magnetic resonance spectrometry (NMR). The results obtained on leukaemic bone marrow and oesophageal cancer were reported earlier. In the present work is reported the data obtained for the levels of the transition elements Fe, Zn, Mn and Cu in human cancers of other regions of the body. The role of trace metals has been discussed from the point of view both of their value as markers of malignancy, and of the elevation of proton spin—lattice relaxation times.     

A novel elevated source/drain PMOSFET formed by Ge-B/Si intermixing

Driven by strain relaxation, the rapid thermal annealing (RTA) of B-doped Ge on an Si substrate forms graded Si_1-xGe_x layers with B confined inside. Based on this observation of Ge-B/Si intermixing, a novel elevated source/drain (S/D) PMOSFET fabrication process is proposed. The new process consists of three simple steps: (a) selective Ge deposition in S/D regions by conventional LPCVD, (b) B implantation, and (c) RTA for Ge-B/Si intermixing to form S/D extensions to the channel. Fabricated PMOSFETs with sub-100 nm gate lengths display excellent short channel performance     

Application of silicon-germanium in the fabrication of ultra-shallow extension junctions for sub-100 nm PMOSFETs

This work summarizes the results of several experiments to investigate the potential applications of Silicon-Germanium alloy in the fabrication of shallow source/drain (S/D) extension Junctions for deep submicron PMOS transistors. Two approaches were used for the fabrication of p/sup +/-Si/sub 1-x/Ge/sub x//n-Si heterojunctions. In the first approach, high dose Ge ion implantation followed by boron implantation into Si was used to form very shallow p/sup +/-Si/sub 1-x/Ge/sub x//n-Si junctions (x/spl les/0.2). In the second approach, thin Ge films were deposited onto Si substrates by conventional low pressure chemical vapor deposition. This was followed by boron implantation into the Ge and thermal annealing to co-diffuse Ge and B atoms into Si and form p/sup +//n heterojunctions. The electrical characteristics of the heterojunction diodes were comparable to those of conventional Si (homo) junctions. Secondary ion mass spectrometry (SIMS) concentration-depth profiles indicate that dopant segregation in the Si/sub 1-x/Ge/sub x/ regions resulted in the formation of ultra-shallow and abrupt junctions that could be used as S/D extensions for sub-100 nm CMOS generations. PMOS transistors fabricated using these techniques exhibit superior short-channel performance compared to control devices, for physical gate lengths down to 60 nm.     

An adjustable work function technology using Mo gate for CMOSdevices

Nitrogen implantation of Mo gate was used to fabricate MOS capacitors and CMOS transistors. Initial studies demonstrate that the work function of Mo is sensitive to nitrogen implantation energy. Mo with (110) orientation exhibits a high work function, making it suitable for bulk p-MOSFET gate electrodes. Nitrogen implantation can be used to lower the Mo work function, making it suitable for n-MOSFET gate electrodes. A gate work function reduction of 0.42 eV was achieved for the n-FETs on CMOS wafers. With further optimization, this single metal gate technology may potentially replace conventional poly-Si gate technology for CMOS and can also be used for multiple-V_T technologies     

Application of Methanobrevibacter acididurans in anaerobic digestion.

To operate anaerobic digesters successfully under acidic conditions, hydrogen utilizing methanogens which can grow efficiently at low pH and tolerate high volatile fatty acids (VFA) are desirable. An acid tolerant hydrogenotrophic methanogen viz. Methanobrevibacter acididurans isolated from slurry of an anaerobic digester running on alcohol distillery wastewater has been described earlier by this lab. This organism could grow optimally at pH 6.0. In the experiments reported herein, M. acididurans showed better methanogenesis under acidic conditions with high VFA, particularly acetate, than Methanobacterium bryantii, a common hydrogenotrophic inhabitant of anaerobic digesters. Addition of M. acididurans culture to digesting slurry of acidogenic as well as methanogenic digesters running on distillery wastewater showed increase in methane production and decrease in accumulation of volatile fatty acids. The results proved the feasibility of application of M. acididurans in anaerobic digesters.     

Chemical surface treatment of ultrahigh molecular weight polyethylene for improved adhesion to methacrylate resins

Ultrahigh molecular weight polyethylene (UHMWPE) has high yield strength and modulus, but is nonpolar and chemically inert. For it to be used as an effective reinforcing agent for composites, methods to make the UHMWPE wettable or capable of reaction with the matrix are critical. In the current work, Spectra 900? (UHMWPE) fibers were surface modified by swelling in p‐xylene with: (1) methylmethacrylate (MMA) monomer; (2) PMMA; (3) camphorquinone (CQ); (4) 3‐methacryloxypropyltrichlorosilane (Cl‐MPS); (5) trimethoxysilyl modified polyethylene, N‐(triethoxysilylpropyl)‐dansylamide (fluorescent silane), or octadecyltrimethoxy silane (OMS), followed by hydrolysis and reaction with Cl‐MPS; and (6) by coating with SiO₂ films followed by reaction with MPS. These modifiers were used to improve wettability and provide sites for chemical interactions with the resin matrix. Beads of resin [60/40 BisGMA‐TEGMA (bis‐phenol A bis‐(2‐hydroxypropyl) methacrylate and tri(ethylene glycol) dimethacrylate)] were light‐cured around the treated fibers and the improvement in adhesion was tested by microbond shear strength (τ) tests. The improvements were comparable to those reported by acid etching and plasma treatments. The OMS, fluorescent silane, and SiO₂/Cl‐MPS treatments yielded the best results, that is fourfold increases in τ compared with untreated fibers. © 2005 Wiley Periodicals, Inc. J Appl Polym Sci 96: 1564–1572, 2005     

Solubility studies and thermophysical properties of uranium–neodymium mixed oxides system

Uranium–neodymium mixed oxides (U_1−yNd_y)O_2±x (y=0.2–0.85) were prepared by citrate gel-combustion and characterized by XRD. Single phase fluorite structure was observed up to y=0.80. For solid solutions with y>0.80 additional lines pertaining to hexagonal neodymium oxide were observed. Lattice thermal expansion of these samples was investigated by using high temperature X-ray diffraction (HTXRD). The coefficients of thermal expansion for (U_1−yNd_y)O_2±x for y=0.2, 0.4, 0.6, and 0.8 in the temperature range 298–1973 K were found to be 16.46, 16.64, 16.79, and 16.89×10⁻⁶ K⁻¹, respectively. Heat capacity and enthalpy increment measurements were carried out by using DSC and drop calorimetry in the temperature range 298–800 K and 800–1800 K respectively. The C_p,m values at 298 K for (U_1−yLa_y)O_2±x (y=0.2, 0.4, 0.6, and 0.8) are 63.4, 64.3, 61.8, and 58.9 J K⁻¹ mol⁻¹ respectively.     

SIMULATION OF FLOWS IN STIRRED VESSELS AGITATED BY DUAL RUSHTON IMPELLERS USING COMPUTATIONAL SNAPSHOT APPROACH

Flow in baffled stirred vessels involves interactions between flow around rotating impeller blades and stationary baffles. When more than one impeller is used (which is quite common in practice), the flow complexity is greatly increased, especially when there is an interaction between two impellers. The extent of interaction depends on relative distances between the two impellers and clearance from the vessel bottom. In this paper we have simulated flow generated by two Rushton (disc) impellers. A computational snapshot approach was used to simulate single-phase flow experiments carried out by Rutherford et al. (1996). The computational model was mapped on the commercial CFD code FLUENT (Fluent Inc., USA). The simulated results were analyzed in detail to understand flow around impellers and interaction between impellers. The model predictions were verified using the data of Rutherford et al. (1996). The results presented in this paper have significant implications for applications of computational fluid mixing tools for designing multiple impeller stirred reactors.