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22.
In this paper we suggest a new statistical method of correcting the results of hot-line experiments for the effects of background sources and we use the new method to reassess the adequacy of three probability distributions proposed in the literature for image spread from line sources. The data are from sources labelled with 125I in semi-thin resin sections 0·4-0·8 μm in thickness. The new method reveals that two of the models describe the empirical distributions more closely than earlier analysis had suggested, and it confirms an increasing relationship between half distance of image spread and the thickness of the source. However, it also confirms that considerable ‘inter hot-line’ experimental variation remains, even after background correction. This suggests that multiple experiments are needed to produce reliable estimates of half distance.  相似文献   
23.
This paper derives the governing equations for the thermomechanical behaviour of composites. When the basic equations for the thermoelastic behaviour of solids were first derived in the nineteenth century several approximations were made. The effect of these assumptions are discussed and illustrated by the results of a simple laboratory test. The implications of this work on the analysis of impact damaged laminates are then discussed.  相似文献   
24.
In this work the Al85Ni9Nd4Co2 alloy was used as a starting point for examining the possibility of forming bulk glassy Al-based materials by combining rapid quenching and ball milling techniques. Fine glassy powders were obtained by ball milling melt-spun amorphous ribbons using a severe cryogenic processing regime. The thermal stability data of the powders as obtained by constant-rate heating and isothermal DSC experiments together with viscosity measurements are discussed with respect to feasible consolidation conditions. The powder compaction was done by two methods (uni-axial hot pressing and extrusion) at 513 K for up to 15 min. Only the uni-axial hot pressing led to bulk Al85Ni9Nd4Co2 samples with similar glassy structure and Vickers microhardness values comparable to those of the initial melt-spun ribbons.  相似文献   
25.
We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer Tc control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.  相似文献   
26.
An unexpected experimental finding is reported where the primary morphology developed during polymerization-induced phase separation in a rubber-modified thermoplastic practically disappears at high conversions. This process was evidenced by light scattering (LS) and scanning electron microscopy (SEM) for a particular composition of solutions of polyisobutylene oligomers (PIB) in isobornylmethacrylate (IBoMA), during the free-radical polymerization of the monomer. The primary phase separation produced a dispersion of domains rich in PIB containing significant amounts of the monomer (IBoMA). Polymerization of the monomer in these domains occurred at high overall conversions producing the filling of dispersed domains with a PIBoMA-PIB blend that could not be distinguished from the matrix. Under these conditions the final material had the appearance of a homogeneous blend.  相似文献   
27.
In the frame of a systematic study of light ion induced threshold reactions on natural tin (Sn) excitation functions for alpha particles induced reactions are presented in a 12–38 MeV energy domain. Using a stacked foil activation method the following radioisotopes were identified: 116Te, 117Te, 118Te, 119Te, 121Te, 123Te, 117Sb, 118Sb, 120Sb, 122Sb, 124Sb, 126Sb, 117Sn, 111In. The experimental cross sections for these isotopes are presented for the first time in this energy range and a direct comparison with values calculated with the ALICE-IPPE code is discussed. Possible use of these data for production of some isotopes relevant in nuclear medicine is suggested.  相似文献   
28.
X-ray topography has been used to study single crystal diamond samples homoepitaxially grown by microwave plasma-assisted chemical vapour deposition (CVD) on high pressure high temperature (HPHT) and CVD synthetic diamond substrates. Clusters of dislocations in the CVD diamond layers emanated from points at or near the interface with the substrate. The Burgers vectors of observed dislocations have been determined from sets of {111} projection topographs. Dislocations have line directions close to the [001] growth direction and are either edge or 45° mixed dislocations. Where groups of dislocations originated at isolated points they tended to be of the edge variety. Where the substrate surface was deliberately damaged before growth, two sets of dislocations were observed to have propagated from each line of damage and there was a tendency for dislocations to be of the 45° mixed variety with a component of their Burgers vector parallel to the polishing direction. It is demonstrated that X-ray topography can be used to deduce the growth history of CVD synthetic diamond samples produced in multiple growth stages.  相似文献   
29.
This research supports the hypothesis that the Trust Vector model can be modified to fit the CyberCraft Initiative, and that there are limits to the utility of historical data. This research proposed some modifications and expansions to the Trust Model Vector, and identified areas for future research.  相似文献   
30.
Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes: (i) effects of implanted species and the density of collision cascades, (ii) the nature of ion-beam-produced planar defects in GaN, (iii) defect production in GaN by swift heavy ions, (iv) blistering of H-implanted GaN, (v) electrical isolation of GaN and ZnO, (vi) the effect of Al and In content on defect processes in III-nitrides, and (vii) structural damage in ZnO with an intriguing effect of the formation of an anomalous defect peak. Emphasis is given to unusual ion-beam-defect processes and to the physical mechanisms underlying them.  相似文献   
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