Large area tunnel oxide passivated rear contact n‐type Si solar cells with 21.2% efficiency

This paper reports on the implementation of carrier‐selective tunnel oxide passivated rear contact for high‐efficiency screen‐printed large area n‐type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n⁺ polysilicon layer provides excellent rear contact passivation with implied open‐circuit voltage iV_oc of 714 mV and saturation current density J_0b′ of 10.3 fA/cm² for the back surface field region. The durability of this passivation scheme is also investigated for a back‐end high temperature process. In combination with an ion‐implanted Al₂O₃‐passivated boron emitter and screen‐printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm² commercial grade n‐type Czochralski wafers. Copyright © 2016 John Wiley & Sons, Ltd.     

Torsional method for evaluating hair damage and performance of hair care ingredients

In this study, we have developed a single hair fiber torsional pendulum method to determine the role of the cuticle and the cortex on torsional properties with respect to fiber cross-sectional area, fiber rigidity, and energy dissipation at 65% RH and in the wet state. Our results demonstrate that in fine diameter fibers with a high cuticle-to-cortex ratio, the cuticula exert a significant effect on the torsional deformation behavior of hair fibers at both normal humidities and in the wet condition. In addition, our data indicate that energy dissipation is confined to fibers with a high cuticle-to-cortex ratio, and the amount of energy dissipated becomes more pronounced with increasing water content. The torsional properties of hair spray-treated fibers suggest that the deposited hair spray film masks the properties of the base fiber and imparts its own dissipative character to the measurement. Since tensile mechanical properties are often used to make claims about the performance of hair care products, we have compared the results obtained from torsional and tensile measurements on over-processed bleached hair fibers conditioned with Polyquaternium-10 and cetyl trimethylammonium bromide (CETAB) to evaluate which method is more advantageous. Our data demonstrate that torsional measurements can distinguish hair care products which reinforce the cuticle from those which affect the cortex, while tensile measurements showed no significant differences.     

Large-mode-area leaky optical fiber fabricated by MCVD

A large-mode-area single-mode optical fiber based on leaky-mode filtering was prepared by a modified chemical vapor deposition (MCVD) technique. The fiber has a leaky cladding that discriminates the fundamental mode from higher-order modes. A preliminary version has a 25 μm core diameter and 0.11 numerical aperture. A Gaussian-like mode with 22 μm mode field diameter was observed after 3 m propagation, in agreement with modeling.     

Initial-stage Sintering Kinetics of Nanocrystalline Tungsten

Initial-stage sintering kinetics of nanocrystalline tungsten has been studied in the temperature range of 1273–1473 K (1000–1200 °C). Nanocrystalline tungsten sinters initially through a grain boundary diffusion mechanism. The calculated activation energy was 388 ± 11 kJ/mol at low temperatures (1273–1373 K (1000–1100 °C)) and 409 ± 7 kJ/mol at high temperatures (1373–1473 K (1100–1200 °C)), which are close to the experimentally measured activation energy for grain boundary diffusion (385 kJ/mol).     

A non destructive technique for determination of U and Pu content in MOX fuel pins for fast reactors

MOX fuel pins containing both U²³³O₂ and PuO₂ have been fabricated for making an experimental subassembly for irradiation in Fast Breeder Test reactor (FBTR) at Kalpakkam, India. This unique composition of the fuel pin is chosen to simulate the thermo-mechanical conditions of the upcoming Prototype Fast Breeder Reactor (PFBR) in the existing Fast Breeder Test Reactor. Since the fertile matrix is natural UO_2, it was difficult to monitor the percentage of U²³³O₂ through chemical methods and neutron assay methods. During the fabrication of MOX fuel pins at Advanced Fuel Fabrication Facility; Bhabha Atomic Research Centre, Tarapur, Passive Gamma Scanning (PGS) was employed as one of the characterisation tools for verifying the fuel composition. PGS was found to be effective in estimating the percentage composition of both U²³³O₂ and PuO₂ and also in ensuring the uniform distribution of the fissile material in MOX fuel pins. PGS is also found effective in monitoring the correct loading of natural UO₂ insulation pellets and MOX fuel pellets in welded MOX pins.     

Impact of Ni Concentration on the Performance of Ni Silicide/HfO2/TiN Resistive RAM (RRAM) Cells

We present a study of Ni silicide as the bottom electrode in HfO₂-based resistive random-access memory cells. Various silicidation conditions were used for each device, yielding different Ni concentrations within the electrode. A higher concentration of Ni in the bottom electrode was found to cause a parasitic SET operation during certain RESET operation cycles, being attributed to field-assisted Ni cation migration creating a Ni filament. As such, the RESET is affected unless an appropriate RESET voltage is used. Bottom electrodes with lower concentrations of Ni were able to switch at ultralow currents (RESET current <1 nA) by using a low compliance current (<500 nA). The low current is attributed to the tunneling barrier formed by the native SiO₂ at the Ni silicide/HfO₂ interface.     

Procedure for evaluation of thermal management requirements in a laser diode structure

Temperature is either a direct catalyst or a precipitating factor in several common laser diode degradation mechanisms including dark-line defects, catastrophic optical destruction, metal diffusion and electrode delamination. This strong correlation between device temperature and performance degradation demonstrates the need for an efficient thermal management strategy. We have adopted a commonly used heat generation model to perform a finite element analysis to compute steady-state and transient thermal profiles for a laser diode structure. The flexibility of the FE model is utilized in performing a parametric study of selected variables affecting temperature in the structure. Taguchi principles are used in the set-up and analysis of this model, and quantitative correlations between the selected variables and temperature are derived. The combined interaction expression is then modeled as an optimization function that may be applied in thermal management analysis. The approach demonstrated here conforms to a general methodology for the development of physics of failure models for degradation in optoelectronic devices.     

Determination of fixed electron-beam-induced positive oxide charge

Contrary to previous beliefs, electron-beam-induced positive charges in insulators persist where created for at least several weeks without discernible movement. Formerly, coating with a thin metal overlay was thought to allow the charge to leak away. Coating with a conductor is shown to shield electric fields from affecting the imaging probe, but to remove no charge from the specimen. A new technique is introduced for the evaluation of the properties of electron-beam-induced positive charges in metal-oxide-semiconductor (MOS) capacitors. MOS structures were subjected to partial area exposure in a scanning electron microscope. These exposures resulted in the creation of areas of localized positive charge within the oxide, which was observed as steps in the capacitance-voltage data. A systematic study was performed. It related the exposed area to the step height and the amount of induced charge to the voltage shift of the step. A model describing the observed phenomenon is presented, followed by a comparison of theoretical and experimental results. The progress of the charge over time was studied by performing capacitance-voltage analysis 30 min after electron beam exposure and up to 4 weeks later.     

Quantum capture times at room temperature in high-speed In0.4Ga0.6As-GaAs self-organized quantum-dot lasers

The quantum capture times in high-speed single-mode self-organized quantum-dot (QD) lasers with I_th=15-30 mA, and small-signal modulation bandwidth f_{-3 dB}=4.5 GHz, have been estimated from high frequency electrical impedance measurements. The effective carrier capture times, determined from this relatively simple measurement technique, vary in the range of 20-40 ps, depending on bias current, and are in excellent agreement with theoretical predictions. The results suggest that carrier capture, not damping, may prove to be the limiting factor in the modulation bandwidths of QD lasers     

Surface wettability of human hair. I. Effect of deposition of polymers and surfactants

Monitoring the wetting force exerted on a single fiber while the fiber is slowly and continuously immersed in a liquid and then withdrawn can provide several kinds of information about the physicochemical heterogeneity of the fiber surface. This method for scanning the fiber surface with an appropriate liquid has been found useful for studying the distribution of materials deposited on the surface of human hair to improve hair assembly properties, such as cationic polymers used in hair conditioners. It is shown how wetting force vs. immersion depth curves can reflect not only the average distribution of the material on the surface, but also the degree of uniformity of the deposit; further, wetting force curves for multiple immersions of the same treated fiber indicate the ease of desorption of the surface material. The results for the systems studied, which include mildly oxidized hair and smooth nylon fibers for comparison, show how the relation between the critical surface tension of the fiber and the surface tension of the treating solution influences distribution and substantivity. Finally, data on the difference between advancing and receding wettability indicate how this hysteresis is related to the nature of the surface and to surface coverage by treating agents.