Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

The structural properties and surface morphology of AlGaN/GaN structures grown on LiGaO₂ (LGO), sapphire, and hydride vapor phase epitaxy (HVPE)-grown GaN templates are compared. AlGaN grown on LGO substrates shows the narrowest x-ray full width at half maximum (FWHM) for both symmetric 〈00.4〉 and asymmetric 〈10.5〉 reflections. Atomic force microscopy (AFM) analysis on AlGaN surfaces on LGO substrates also show the smoothest morphology as determined by grain size and rms roughness. The small lattice mismatch of LGO to nitrides and easily achievable Ga-polarity of the grown films are the primary reasons for the smoother surface of AlGaN/GaN structure on this alternative substrate. Optimizations of growth conditions and substrate preparation results in step flow growth for an AlGaN/GaN structure with 300 Å thick Al_0.25Ga_0.75N on 2.4 μm thick GaN. A high III/V flux ratio during growth and recently improved polishing of LGO substrates aids in promoting two dimensional step flow growth. The GaN nucleation layer directly on the LGO substrate showed no evidence of mixed phase cubic and hexagonal structure that is typically observed in the nucleation buffer on sapphire substrates. Cross-sectional high-resolution transmission electron microscopy (HRTEM) was performed on an AlGaN/GaN heterostructure grown on LGO. The atomic arrangement at the AlGaN/GaN interface was sharp and regular, with locally observed monolayer and bilayer steps.     

Inpainting of binary images using the Cahn-Hilliard equation.

Image inpainting is the filling in of missing or damaged regions of images using information from surrounding areas. We outline here the use of a model for binary inpainting based on the Cahn-Hilliard equation, which allows for fast, efficient inpainting of degraded text, as well as super-resolution of high contrast images.     

Mlcrolasers based on silica microspheres

Light can be confined efficiently in the high-Q, small-volume whispering-gallery-modes observed in silica microspheres. By coupling these microspheres to eroded optical fibers and fiber tips, direct mapping of the whispering-gallery modes has been achieved and the mode numbers have been assessed. The properties of these modes have allowed us to obtain laser action with very low thresholds in Nd-doped silica microspheres. Further projects in the field of non-linear optics and cavity quantum electrodynamics are described.     

Milk yield and mammary function in dairy cows milked four times daily

Groups of lactating cows and heifers were milked four times daily in two diagonally opposed glands for 4 weeks, and the effects on milk yield studied relative to twice-daily milked glands as controls. Mammary enzyme activities, in vitro synthesis rates of milk constituents and histological scoring were determined in mammary biopsy samples obtained at the end of this period. These were used for assessment of mammary function. Frequent milking increased milk yield only in the treated glands, the contralateral control glands continuing to decline in yield at approximately 2%/week. There was no significant difference in response between cows and heifers; the mean increase in yield was 10.4%. The rate of decline in milk yield tended to decrease with frequent milking, to approximately 1%/week. Consequently the yield of the treated glands continued to be elevated above that of the controls for some time after reversion to overall twice daily milking. Milk protein content was increased slightly by frequent milking. Mammary enzyme activities were approximately 18% higher in the treated glands than in the controls. Synthesis rates of lactose, casein and total protein were unaffected by milking frequency, but were all lower in the gland selected for the second biopsy, reflecting the reduction in milk yield caused by the first biopsy. DNA synthesis was increased by milking frequency, as were the size and number of epithelial cells in histological sections.     

Insulator‐Conductor Type Transitions in Graphene‐Modified Silver Nanowire Networks: A Route to Inexpensive Transparent Conductors

Silver nanowire coatings are an attractive alternative to indium tin oxide for producing transparent conductors. To fabricate coatings with low sheet resistance required for touchscreen displays, a multi‐layer network of silver nanowires must be produced that may not be cost effective. This problem is counteracted here by modifying the electrical properties of an ultra‐low‐density nanowire network through local deposition of conducting graphene platelets. Unlike other solution‐processed materials, such as graphene oxide, our pristine graphene is free of oxygen functional groups, resulting in it being electrically conducting without the need for further chemical treatment. Graphene adsorption at inter‐wire junctions as well as graphene connecting adjacent wires contributes to a marked enhancement in electrical properties. Using our approach, the amount of nanowires needed to produce viable transparent electrodes could be more than 50 times less than the equivalent pristine high density nanowire networks, thus having major commercial implications. Using a laser ablation process, it is shown that the resulting films can be patterned into individual electrode structures, which is a pre‐requisite to touchscreen sensor fabrication.     

Ultra-Thin Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> Dislocation Blocking Layers for Ge/Strained Si CMOS Devices

We demonstrate ultra-thin (<150 nm) Si_1−x Ge _x dislocation blocking layers on Si substrates used for the fabrication of tensile-strained Si N channel metal oxide semiconductor (NMOS) and Ge P channel metal oxide semiconductor (PMOS) devices. These layers were grown using ultra high vacuum chemical vapor deposition (UHVCVD). The Ge mole fraction was varied in rapid, but distinct steps during the epitaxial layer growth. This results in several Si_1−x Ge _x interfaces in the epitaxially grown material with significant strain fields at these interfaces. The strain fields enable a dislocation blocking mechanism at the Si_1−x Ge _x interfaces on which we were able to deposit very smooth, atomically flat, tensile-strained Si and relaxed Ge layers for the fabrication of high mobility N and P channel metal oxide semiconductor (MOS) devices, respectively. Both N and P channel metal oxide semiconductor field effect transister (MOSFETs) were successfully fabricated using high-k dielectric and metal gates on these layers, demonstrating that this technique of using ultra-thin dislocation blocking layers might be ideal for incorporating high mobility channel materials in a conventional CMOS process.     

Nanoimprint lithography fabrication of waveguide-integrated optical gratings with inexpensive stamps

We demonstrate that a replica grating can be effectively used as an inexpensive stamp for nanoimprint lithography to pattern diffractive optical couplers integrated with planar optical waveguides. Imprinted grating patterns were integrated with silicon oxynitride waveguide films to be used as an evanescent wave sensor in the input grating-coupler configuration. An anti-adhesion layer using an inexpensive, two-step chemical functionalization was developed for the stamps. The stamps were able to withstand imprint temperatures ranging from 140 to 190 °C and high fidelity imprints were obtained. The groove pattern was integrated in waveguide films by etch transfer and light-coupling properties of gratings with 1.2 μm pitch were tested using a λ = 1.55 μm laser. Compared to etched silicon masters, replica optical gratings provide uniform pattern density over their entire surface with no unstructured regions, are inexpensive, and readily available for R&D use.     

Electrochemically Tuned Properties for Electrolyte‐Free Carbon Nanotube Sheets

Injecting high electronic charge densities can profoundly change the optical, electrical, and magnetic properties of materials. Such charge injection in bulk materials has traditionally involved either dopant intercalation or the maintained use of a contacting electrolyte. Tunable electrochemical charge injection and charge retention, in which neither volumetric intercalation of ions nor maintained electrolyte contact is needed, are demonstrated for carbon nanotube sheets in the absence of an applied field. The tunability of electrical conductivity and electron field emission in the subsequent material is presented. Application of this material to supercapacitors may extend their charge‐storage times because they can retain charge after the removal of the electrolyte.     

Semantic clustering for region-based image retrieval

With the proliferation of applications that demand content-based image retrieval, two merits are becoming more desirable. The first is the reduced search space, and the second is the reduced “semantic gap.” This paper proposes a semantic clustering scheme to achieve these two goals. By performing clustering before image retrieval, the search space can be significantly reduced. The proposed method is different from existing image clustering methods as follows: (1) it is region based, meaning that image sub-regions, instead of the whole image, are grouped into. The semantic similarities among image regions are collected over the user query and feedback history; (2) the clustering scheme is dynamic in the sense that it can evolve to include more new semantic categories. Ideally, one cluster approximates one semantic concept or a small set of closely related semantic concepts, based on which the “semantic gap” in the retrieval is reduced.