Light-induced electron spin polarization in the ground state of water-soluble copper porphyrins

Light-induced spin-polarized transient EPR spectra are reported for several water-soluble copper porphyrins. The spectra are assigned to the doublet ground state, with emissive spin polarization resulting from photoexcitation and subsequent electronic relaxation. In contrast to other systems for which polarization of a doublet ground state has been observed, the exchange interactions in the copper porphyrins are strong and the geometry is fixed. It is proposed that intersystem crossing from the photoexcited trip-doublet to the trip-quartet state can lead to net polarization of the spin system and that this polarization is maintained during electronic decay, possibly via charge-transfer and exciplex states. The intensity of the observed spin polarization is essentially independent of the molecular orientation in the external field, but is strongly dependent on the nature of the charged peripheral groups. Possible reasons for this behavior are discussed.     

Hopping and optical absorption of electrons in nano-porous crystal 12CaO·7Al2O3

Recently it has been discovered that a nano-porous main group oxide 12CaO·7Al₂O₃ (C12A7) can be converted from a wide-gap insulator to a good transparent conductor. Using ab initio modelling we explain good conductivity of this material by very small barriers for hopping of localised electrons between neighbouring positive cages. We show that optical absorption of C12A7 in infrared region and at energies higher than 2.7 eV is due to inter-cage and intra-cage electron transitions, respectively. The proposed mechanisms can be useful in further search for conducting transparent media.     

Experimental evidence of a relationship between monomer plasma residence time and carboxyl group retention in acrylic acid plasma polymers

Decreasing carboxyl retention in deposits from the glow region of an acrylic acid plasma was measured by X-ray photoelectron spectroscopy and chemical derivatisation as the collection distance from the monomer vapour inlet was increased. Volatilisation of plasma polymerised acrylic acid was detected after trifluoroethanol derivatisation; this is correlated with evaporation of low molecular weight components observed previously.     

On a large-gain theorem

The aim of this paper is to give a general quantitative requirement which the loop gain must satisfy in order to stabilize a given unstable (possibly nonlinear and time-varying) plant, namely that the gain must exceed one.     

Adaptive wavelet packet based image coding with optimalentropy-constrained lattice vector quantizer (ECLVQ)

In this work, wavelet basis and source coding are jointly optimized, while specifying the source coding strategy as entropy-constrained lattice vector quantizer (ECLVQ). The presented approach differs from previous works in which the choice of wavelet basis is quasioptimal, but the quantizer set is optimally chosen     

Structural and chemical analysis of C : H,O /Si : H,O multilayers deposited by reactive RF sputtering

Hydro-oxygenated carbon (C : H,O) and silicon (Si : H,O) layers are deposited by RF sputtering of graphite and silicon targets in a mixture of argon, hydrogen and oxygen gases. C : H,O/Si : H,O/C : H,O/Si : H,O... multilayers are obtained by sequential deposition of C : H,O and Si : H,O layers. Infrared (IR) spectroscopy, Grazing Incidence X-ray Diffraction (GIXD) and X-ray Photoelectron Spectroscopy (XPS) techniques have been used to analyse the formed multilayers. The IR spectra made on as deposited structures show the presence of Si---C, Si---O, C---O, Si---H, C---H and C=C bonds. This result indicates an interfacial reactivity between Si : H,O and C : H,O layers. The latter result is confirmed by the XPS measurements. After an annealing at 850°c for two hours under argon atmosphere (10^-3 mbar), the concentration of the Si---C bonds is increased by a factor two while the Si---H and C---H bonds disappear complet The GIXD measurements show that the multilayers are amorphous when annealed below 750°C, and they are crystallized with the formation of the α-SiC phase if the heat treatment is made at 850°C. The mean size of the microcrystallites is 50 Å about.