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Erythrocyte ghosts were exposed to various levels of oxyradical shock in order to identify the extent of accumulation of peroxidative intermediates. Malondialdehyde reacting end products were the same in all different models. But, the accumulation of dienyl radical species increased with higher intensity of oxyradical shock. These dienyl radicals may rearrange to create a homogeneous smectic multilamellar microenvironment which may be more fluid in terms of the molecular dynamics.  相似文献   
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Analysis of adhesive bonded composite lap joints with transverse stitching   总被引:1,自引:0,他引:1  
The effect of transverse stitching on the stresses in the adhesive is investigated using an adhesive sandwich model with nonlinear adhesive properties and a transverse stitching model for adhesive bonded composite single-lap and double-lap joints. Numerical results indicate that, among all stitching parameters, thread pretension and stitch density have significant effect on the peel stresses in the adhesive; increase in the thread pretension and the stitch density leads to a decrease in peel stress in the adhesive, while an increase in other parameters generally results in a negligible reduction in peel stress. The effect of stitching was found to be negligible on the shear stresses in the adhesive. Thus it is concluded that stitching is effective for the joints where peel stresses are critical and ineffective for those where shear stresses are critical.  相似文献   
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Hall measurements have been used to compare the properties of 4H-SiC inversion-mode MOSFETs with “wet” and “dry” gate oxides. While the field-effect mobilities were approximately 3–5 cm2/Vs, the Hall mobilities in 4H-SiC MOSFETs in the wet and dry oxide samples were approximately 70–80 cm2/Vs. The dry-oxidized metal oxide semiconductor field effect transistors (MOSFETs) had a higher transconductance, improved threshold voltage, improved subthreshold slope, and a higher inversion carrier concentration compared to the wet-oxidized MOSFETs. The difference in characteristics between the wet- and the dry-oxidized MOSFETs is attributed to the larger fixed oxide charge in the dry oxide sample and a higher interface trap density in the wet oxide sample.  相似文献   
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BONSAI, a model-based 3D object recognition system, is described. It identifies and localizes 3D objects in range images of one or more parts that have been designed on a computer-aided-design (CAD) system. Recognition is performed via constrained search of the interpretation tree, using unary and binary constraints (derived automatically from the CAD models) to prune the search space. Attention is focused on the recognition procedure, but the model-building, image acquisition, and segmentation procedures are also outlined. Experiments with over 200 images demonstrate that the constrained search approach to 3D object recognition has an accuracy comparable to that of previous systems  相似文献   
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A heterogeneous finite element model with randomly distributed inhomogeneities has been developed for the determination of the forming limit diagram (FLD) for thin aluminum sheet material based on the prediction of localized necking. The strength difference between the inhomogeneities and the matrix is ascertained either from the fluctuation of the experimental stress-strain curve or from a micromechanical analysis that uses a representative particle field. By changing the specimen geometry and friction conditions, different stress states (or strain paths) are achieved. A plot of the critical Oyane fracture parameter is used to identify the limit strain state. Also, a plot of equivalent plastic strain rate is used to distinguish the boundary of intense shear bands and hence to identify where to take the measurement point. Both a plane stress model and a three-dimensional (3-D) model are adopted to predict the shear banding phenomenon and hence the FLD. The predicted FLD agrees well with the measurements from a recent round robin experimental FLD involving several independent research laboratories. The Taguchi method is applied to assess how the various parameters involved in the heterogeneous model affect the calculated forming limit strain.  相似文献   
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