An advanced nano-composite cation-exchanger polypyrrole zirconium titanium phosphate as a Th(IV)-selective potentiometric sensor: preparation, characterization and its analytical application

Polypyrrole has emerged as one of the highly pursued conducting polymers owing to its high electrical conductivity and good environmental stability. In spite of its excellent electrical properties, the chemical and thermal stability and processability are not very satisfactory. The incorporation of a polymer material into an inorganic ion-exchanger provides a high class of hybrid ion-exchangers with enhanced ion-exchange properties, high reproducibility, high stability, and good selectivity for heavy metals. A novel organic–inorganic composite-polypyrrole zirconium titanium phosphate has been synthesized using zirconium titanium phosphate, which is an advanced inorganic ion-exchange material with the qualities listed above. The physicochemical properties of this composite material are characterized by X-ray, TGA–DTA, AAS, FTIR, SEM, and TEM. The ion-exchange capacity, pH titrations, elution, and chemical stability were determined to study ion-exchange properties of the material. Distribution studies for various metal ions revealed that the nano-composite is highly selective for Th(IV). An ion-selective membrane electrode was fabricated using this material for the determination of Th(IV) ions in solutions. The analytical utility of this electrode was established by employing it as an indicator electrode in electrometric titrations.     

SiCp及Al2O3w增强铸态混杂金属基复合材料的疲劳裂纹扩展机理（英文）

研究了一种SiCp及Al2O3w增强铸态混杂金属基复合材料(MMC)的疲劳裂纹扩展(FCG)机理,同时对比研究了Al2O3w增强铸态金属基复合材料和铸态铝合金的疲劳裂纹扩展机理。在研究近临界和裂纹稳定扩展区域的疲劳裂纹扩展(FCG)机理时,发现混杂MMC的临界应力强度因子?Kth值高于其他两种材料的?Kth值,说明应力强度因子?K值较低时混杂MMC可以更好地抵抗裂纹扩展。随着?K值的降低,两种MMC在近临界区域显示出相似的FCG机理,即主要由增强相–基体界面的剥离控制,随后由铝基体中空隙的形核与合并控制;在裂纹稳定或中等扩展区域,?K值较高时FCG除了受界面上周期性裂纹扩展引起的增强相–基体界面剥离的影响之外,还显著受到铝基体中疲劳条带的影响。此外,在高?K值下,因为局部失稳断裂机制,可见铝基体中空隙的形核与合并以及SiCp和Al2O3w中的穿晶断裂。对于铸态铝合金,在低?K值下,FCG主要受空隙的形核与合并所控制;在高?K值下,FCG主要受铝晶粒的疲劳条带控制,随后受Si团簇中空隙的形核与合并控制。     

A group theoretic approach to construct cryptographically strong substitution boxes

In this paper, we present a method to construct a substitution box used in encryption applications. The proposed algorithm for the construction of substitution box relies on the linear fractional transform method. The design methodology is simple, while the confusion-creating ability of the new substitution box is complex. The strength of the proposed substitution box is evaluated, and an insight is provided to quantify the confusion-creating ability. In addition, tests are performed to assess the vulnerability of the encrypted data to algebraic and statistical attacks. The substitution box is critically analyzed by strict avalanche criterion, bit independent criterion, differential approximation probability test, linear approximation probability test, non-linearity test, and majority logic criterion. The performance of the proposed substitution box is also compared with those of some of the well-known counterparts including AES, APA, Gray, S₈, Skipjack, Xyi, and prime of residue substitution boxes. It is apparent that the performance, in terms of confusion-creating ability, of the new substitution box is better than those of some of the existing non-linear components used in encryption systems. The majority logic criterion is applied to these substitution boxes to further evaluate the strength and usefulness.     

Numerical treatment of nonlinear Emden–Fowler equation using stochastic technique

The article is based on the approximate solution of a well known Lane–Emden–Fowler (LEF) equation. A trial solution of the model is formulated as an artificial feed-forward neural network containing unknown weights which are optimized in an unsupervised way. The proposed scheme is tested successfully on various test cases of initial value problems of LEF equations. The reliability and effectiveness is validated through comprehensive statistical analysis.     

"On the relationship between lateralized brain function and orienting asymmetries": Correction to Teufel et al. (2010).

Reports an error in "On the relationship between lateralized brain function and orienting asymmetries" by Christoph Teufel, Asif A. Ghazanfar and Julia Fischer (Behavioral Neuroscience, 2010[Aug], Vol 124[4], 437-445). In the article, we wrote that “the likelihood of obtaining at least one significant result at p n. The probability of obtaining at least one significant result is therefore 1 — (1— α)n. (The following abstract of the original article appeared in record 2010-16138-001.) Hemispheric specializations for language perception constitute one of the classic topic in cognitive neuroscience. Evidence has accumulated to suggest that lateralized acoustic processing is not restricted to humans but is also found in numerous animal species. One of the methods used to track such lateralization is the orienting-asymmetry paradigm, a simple, noninvasive means to study lateralization that has been applied to a range of different species ranging from harpy eagles to humans. Here we summarize and compare the results of studies employing the orienting-asymmetry paradigm, showing that these studies yield largely inconsistent results. We critically discuss the methodology's implicit assumptions and conclude that the empirical inconsistencies produced by the orienting-asymmetry paradigm, and the lack of sufficient evidence supporting the paradigm's underlying assumptions, warrant serious caution when interpreting results obtained by the method. Nontrivial interpretations of orienting-asymmetry results will require a much better understanding of how lateralized brain functions interact with overt behaviors. (PsycINFO Database Record (c) 2011 APA, all rights reserved)     

Prediction of Layer‐Inversion Behavior of Down‐Flow Binary Solid‐Liquid Fluidized Beds

The layer‐inversion behavior of down‐flow binary solid‐liquid fluidized beds is predicted using the property‐averaging approach. The binary pair in this case consists of a larger solid species which is also heavier than its smaller counterpart, while both are lighter than the fluidizing medium. The model is based on using the generalized Richardson‐Zaki correlation for evaluation of the bed void fraction wherein mean values of particle properties are used. However, unlike the maximum bulk density condition for the conventional up‐flow binary solid fluidized bed, the model is based on a minimum bulk density condition for occurrence of layer inversion. This is due to the fact that the volume contraction phenomenon associated with the mixing of unequal solid species leads to a decrease in bulk density of the bed. Model predictions are also compared using the limited data available in the literature. Predictions are consistent with the observed mixing behavior.     

Ion-exchange kinetics and electrical conductivity studies of polyaniline Sn(IV) tungstoarsenate; (SnO2)(WO3)(As2O5)4(C6H5NH)2·nH2O: a new semi-crystalline ‘polymeric-inorganic’ composite cation-exchange material

A new and novel electrically conducting ‘polymeric-inorganic’ composite cation-exchange material; polyaniline Sn(IV) tungstoarsenate was prepared by incorporating polyaniline into inorganic ion-exchanger material. It possessed improved ion-exchange capacity, high chemical and thermal stabilities, reproducibility and selectivity for some specific metal ions. Kinetic study of exchange for some divalent metal ions of alkaline earths and transition metals was carried out under the conditions favoring a particle diffusion-controlled ion-exchange phenomenon and some physical parameters such as self diffusion coefficient D₀, energy of activation E_a and entropy of activation ΔS* were determined. The temperature dependence of electrical conductivity of this composite material with increasing temperatures was measured by using 4-in-line-probe DC electrical conductivity measuring-technique. The conductivity values lie in the semiconductor region, i.e. in the range of 10⁻³ S cm⁻¹ that follow the Arrhenius equation. The energy of activation of electrical conduction for the composite was also calculated.     

In situ TEM nanoindentation and dislocation-grain boundary interactions: a tribute to David Brandon

As a tribute to the scientific work of Professor David Brandon, this paper delineates the possibilities of utilizing in situ transmission electron microscopy to unravel dislocation-grain boundary interactions. In particular, we have focused on the deformation characteristics of Al–Mg films. To this end, in situ nanoindentation experiments have been conducted in TEM on ultrafine-grained Al and Al–Mg films with varying Mg contents. The observed propagation of dislocations is markedly different between Al and Al–Mg films, i.e. the presence of solute Mg results in solute drag, evidenced by a jerky-type dislocation motion with a mean jump distance that compares well to earlier theoretical and experimental results. It is proposed that this solute drag accounts for the difference between the load-controlled indentation responses of Al and Al–Mg alloys. In contrast to Al–Mg alloys, several yield excursions are observed during initial indentation of pure Al, which are commonly attributed to the collective motion of dislocations nucleated under the indenter. Displacement-controlled indentation does not result in a qualitative difference between Al and Al–Mg, which can be explained by the specific feedback characteristics providing a more sensitive detection of plastic instabilities and allowing the natural process of load relaxation to occur. The in situ indentation measurements confirm grain boundary motion as an important deformation mechanism in ultrafine-grained Al when it is subjected to a highly inhomogeneous stress field as produced by a Berkovich indenter. It is found that solute Mg effectively pins high-angle grain boundaries during such deformation. The mobility of low-angle boundaries is not affected by the presence of Mg.Special title: Advanced Materials and Characterization: Proceedings of the Brandon Symposium; Guest Editors: Wayne D. Kaplan and Srinivasa Ranganathan     

Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes

Dry etch-induced damage has been investigated using Pd Schottky diodes fabricated on n-type GaN surfaces that were etched by reactive ion etching in SiCl₄ and Ar plasmas. Damage was evaluated by measuring the current-voltage, current-voltage-temperature, and capacitance-voltage characteristics of the diodes. A plasma chemistry that includes a chemical etching component (SiCl₄) was found to significantly reduce the degree of induced damage in comparison to a chemistry that uses only a physical component (Ar). The effective barrier height, ideality factor, reverse breakdown voltage, reverse leakage current, and the effective Richardson coefficient of diodes etched under various plasma conditions are presented. The degree of etch-induced damage was found to depend strongly on the plasma self-bias voltage but saturates with etch time after an initial two-minute etch period. Rapid thermal annealing was found to be effective in improving the diode characteristics of the etched GaN samples.     

A numerical comparison of partial solutions in the decomposition method for linear and nonlinear partial differential equations

In this study, the decomposition method for solving the linear heat equation and nonlinear Burgers equation is implemented with appropriate initial conditions. The application of the method demonstrated that the partial solution in the x-direction requires more computational work when compared with the partial solution developed in the t-direction but the numerical solution in the x-direction are performed extremely well in terms of accuracy and efficiency.