Effect of film thickness on hydrogen content in a-Si : H

The hydrogen content, its depth distribution, and its bonding configuration have been studied in hydrogenated amorphous silicon prepared by plasma-enhanced chemical vapor deposition with hydrogen-diluted silane. Nuclear reaction analysis and infrared spectroscopy were used to determine the total amount of hydrogen and its bonded component, respectively. It has been established that the total concentration of hydrogen does not depend on the film thickness, and has a uniform depth profile. The concentration of bonded hydrogen changes with the film thickness within the measurement accuracy. The data obtained suggest the presence of molecular (non-bonded) hydrogen, uniformly distributed in concentration across the film thickness.     

Quasi-static stress fields for a crack inclined to the property gradation in functionally graded materials

Summary.  Quasi-static stress fields for a crack inclined to the direction of property gradation in functionally graded materials (FGMs) are obtained through an asymptotic analysis coupled with Westergaard's stress function approach. The elastic modulus of the FGM is assumed to vary exponentially along the gradation direction. The mode mixity due to the inclination of the property gradient is accommodated in the analysis through superposition of opening and shear modes. The first four terms in the expansion of the stress field are derived to explicitly bring out the influence of nonhomogeneity on the structure of the stress field. Using these stress field contours of constant maximum shear stress, constant maximum principal stress, constant first stress invariant and constant out of plane displacement are generated, and the effect of inclination of the property gradation direction on these contours is discussed. Received September 22, 2002 Published online: May 20, 2003 The financial support of National Science Foundation (NSF) under grant no. CMS 99000138 is gratefully acknowledged.     

Electrical Properties of GeO2–NiO Materials Containing Ni2GeO4

The GeO₂–NiO system is studied in the stability range of Ni₂GeO₄ by temperature-dependent resistivity measurements, in combination with x-ray diffraction, differential thermal analysis, and thermogravimetry. The resistivity of the starting mixtures and heat-treated samples is measured in the composition range 55–90 mol % NiO. The effect of air humidity on the resistivity of the samples is examined.     

A multigrid accelerated hybrid unstructured mesh method for 3D compressible turbulent flow

 A cell vertex finite volume method for the solution of steady compressible turbulent flow problems on unstructured hybrid meshes of tetrahedra, prisms, pyramids and hexahedra is described. These hybrid meshes are constructed by firstly discretising the computational domain using tetrahedral elements and then by merging certain tetrahedra. A one equation turbulence model is employed and the solution of the steady flow equations is obtained by explicit relaxation. The solution process is accelerated by the addition of a multigrid method, in which the coarse meshes are generated by agglomeration, and by parallelisation. The approach is shown to be effective for the simulation of a number of 3D flows of current practical interest. Sponsored by The Research Council of Norway, project number 125676/410 Dedicated to the memory of Prof. Mike Crisfield, a respected colleague     

Catalytic aminolysis of epoxide by alumina prepared from amine-protected Al precursor

The catalytic activities of alumina prepared from an Al alkoxide-amine adduct monomer for the reaction of cyclopentene oxide with piperidine was determined after various pretreatments, including calcination and exposure to moisture. They were compared with the activity of alumina prepared by the conventional hydrolysis method. It was found that the as-prepared sample from the alkoxide-amine monomer preparation was five times more active than a conventional preparation, suggesting that it has a higher density of surface Lewis acid sites. However, its activity was much more severely suppressed by exposure to moisture.     

Nonlinearity analysis and optimization of HBTs for optical mixer designs

Two types of photo heterojunction bipolar transistor (HBT) to directly down-convert optical signals to electronic signals have been reported in the literature: a conventional photo-HBT in which light penetrates through the area of the base-collector junction and an HBT where light shines through the base-collector edge for higher conversion efficiency. Although the performance in relation to bias conditions has been published, the detailed analyses for identifying the parameters and bias conditions that provide optimum direct down-conversion have not been examined. This paper provides a full explanation of the operation of the down-conversion for both HBT configurations based on low-frequency analyses. Such information is useful for both understanding the nonlinear mechanisms involved and designing for maximum efficiency. In addition, a new circuit has been developed from the basic HBT down-conversion circuit that provides improved performance.     

Sequential Spectrum Analysis of the Sideband Components of Digital Amplitude-Modulated Signals

It is shown that, for the spectrum analysis of digital quasi-periodic signals, one must use a procedure based on approximating the sequence of data readouts by a first-order trigonometric polynomial with a varying frequency of its harmonic functions.     

The Shunting of Current and the Resultant Variation of Voltage in Channels of Plasmatrons with Self-Adjusting Length of Electric Arc

The characteristics of pulsation processes in dc plasmatrons with the cathode located in the channel center and the anode in the form of a cylindrical or a conical channel wall are investigated in plasmas of argon and nitrogen at atmospheric pressure. The fast Fourier transform of signals and their subsequent computer processing are used to obtain the dependences of the frequency of fluctuations of the arcing voltage on the working parameters of the plasmatron, namely, the electric arc current, the flow rate of plasma-forming gas, and the channel diameter. For plasmatrons with the self-adjusting length of the electric arc, analysis is performed of the mechanism of reclosing of the anode region of the arc, i.e., of the electric arc shunting associated with the stretching of the current filament by a flow of gas and with the electrodynamic interaction of different filament regions. A formula is derived which defines the dependence of the characteristic frequency of fluctuations of the arcing voltage on the external parameters of the problem, namely, the arc current, the flow rate of the working gas, and the characteristic channel diameter. It is demonstrated that the pattern of the dependence of the frequency of voltage fluctuations on the gas flow rate may vary with the values of the parameter of magnetohydrodynamic interaction. The formula generalizes the experimental results of numerous researchers obtained in a wide range of variation of the external parameters.