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961.
Efficient design of device-to-device (D2D) communication calls for D2D users to propose adaptive power allocation strategy and to establish reliable communication links while protecting the QoS of cellular communications. In this paper, we consider the D2D communication as an underlay to relay-assisted cellular networks. To maximize the ergodic capacity, we derive an optimal transmission power under an average power constraint. With the derived optimal transmission power, a transmission period selection strategy for D2D communication is firstly introduced to improve reliability. We derive the outage probability in closed forms and evaluate the ergodic capacity to show performances of the proposed system. Numerical results show that the D2D system can achieve high capacity gains by flexibly allocating transmission power based on channel state information and significantly enhance reliability by selecting a transmission period, while satisfying various QoS conditions for cellular communication.  相似文献   
962.
Fe(III) impurities, which detract refractoriness and whiteness from porcelain and pottery, could be biologically removed from low-quality clay by indigenous dissimilatory Fe(III)-reducing microorganisms. Insoluble Fe(III) in clay particles was leached out as soluble Fe(II), and the Fe(III) reduction reaction was coupled to the oxidation of sugars such as glucose, maltose and sucrose. A maximum removal of 44-45% was obtained when the relative amount of sugar was 5% (w/w; sugar/clay). By the microbial treatment, the whiteness of the clay was increased from 63.20 to 79.64, whereas the redness was clearly decreased from 13.47 to 3.55.  相似文献   
963.
We cloned the brlA gene from Aspergillus oryzae genomic DNA using the A. nidulans brlA gene as a probe. A 3.1-kb EcoRI-BalI genomic DNA fragment was cloned and sequenced. The deduced amino acid sequence revealed 70% identity with A. nidulans BRLA and contained two C2H2 zinc finger motifs in its carboxyl terminus, and the promoter sequence contained a 43-bp highly conserved region, indicating that the cloned gene was an A. oryzae homologue of A. nidulans brlA. Disruption of the brlA gene by homologous recombination resulted in the loss of ability to form conidiophores. These results suggest that the brlA gene of A. oryzae plays a fundamental role in controlling conidiophore development. When the brlA gene was expressed under the control of the amyB promoter in A. oryzae transformants, highly differentiated and compact colonies were observed on a solid medium. The misscheduled expression of the brlA gene in submerged culture, in which conidiation does not normally occur, caused the development of complex conidiophore structures with vesicles, phialides and conidia.  相似文献   
964.
Twenty-two amylolytic bifidobacteria grown in BHI-starch media were compared for the amylase activity of the intra- and extra-cellular enzymes. The activity of the cells grown in the liquid medium differed considerably. Among the strains tested B. adolescentis Int57 and B. adolescentis ZS8 exhibited higher activities than others. In rice medium containing 0.05% -cysteine·HCl and 0.2% yeast extract, the amylolytic Bifidobacterium strains grew considerably better than non-amylolytic Bifidobacterium strains. B. adolescentis Int57, which showed highest growth and amylase activity in the rice medium, was chosen and rice fermentation was investigated. The titratable acidity (TA) reached 2.43 and pH decreased to 4.4 after 24 h fermentation. The relative ratio of acetic acid to lactic acid gradually decreased during fermentation. The concentration of reducing sugar and amylase activity gradually increased and reached 14 mg maltose equivalent/ml and 35 mU/ml min, respectively, in 24 h. The accumulated reducing sugar was mostly maltotriose. The layer-separation of fermented product was stabilized by the addition of 1% gelatin. It was suggested that amylolytic bifidobacteria may be used for the production of fermented rice products.  相似文献   
965.
Transmission spectra of Sr2Ca2Cu4Oy, which is a part of high Tc superconducting system Bi2Sr2Can?1CunOz, and their temperature evolutions were investigated by monochromatic quasioptical submillimeter spectroscopy. Strong increase of high frequency conductivity in the range 80 to 350K was revealed. The obtained results were analyzed on basis of thermally activated carriers model.  相似文献   
966.
Data are presented demonstrating optical switching and memory in a bistable vertical-cavity surface-emitting laser (VCSEL). Optical switching from lasing to nonlasing or from nonlasing to lasing in the vertical-cavity laser was demonstrated using an AlGaAs probe laser at ~0.78 μm  相似文献   
967.
Several superlattices (SL's) with different layer thicknesses, grown by molecular beam epitaxy (MBE), were disordered via low temperature (550?600°C) Zn diffusions to investigate layer thickness effects on both the Zn diffusion process and the Al-Ga interdiffusion process. The Zn diffusion coefficients were measured using secondary ion mass spectroscopy (SIMS) and Auger electron spectroscopy (AES) and found to be ?10?12 cm2/sec, increasing somewhat with decreasing layer thickness. The activation energy for the Zn diffusion process ranged from 3.1 eV for an 1100Å/period SL to 2.1 eV for a 320Å/period SL. The Al-Ga interdiffusion coefficient and the activation energy associated with the interdiffusion process were calculated from AES depth profiles. The coefficient is on the order of 10?16 cm2/sec and the activation energy is approximately 1 eV, independent of the SL layer thickness.  相似文献   
968.
Silicide-block-film effects on drain-extended MOS (DEMOS) transistors were comparatively investigated, by means of different film stack stoichiometric SiO2 and silicon-rich oxide (SRO). The electrical properties of the as-deposited films were evaluated by extracting source/drain series resistance. It was found that the block film plays a role like a field plate, which has significant influence on the electric field beneath. Similar to hot-carrier- injection (HCI) induced degradation for devices, the block film initially charged in fabrication process also strongly affects the device characteristics and limits the safe operating area.  相似文献   
969.
Light-section (LS)-based range finders are commonly used for obstacle recognition in home service robots and autonomous vehicles. This paper proposes a smart CMOS image sensor for LS-based range finding. The proposed sensor can detect the laser light, even under very strong ambient-illumination levels by using a multiple-capture frame-correlated double sampling (F-CDS), which is realized with an inverter-based switched-capacitor F-CDS accumulator. The proposed sensor also includes on-chip winner-take-all circuits that significantly reduce the software and hardware complexity of interpolation for the subpixel resolution. The prototype chip was fabricated using a 0.35-mum CMOS process. The measurement results show that the proposed sensor can detect a laser line with an intensity that is 56.5 dB lower than that of the ambient illumination, providing a spatial resolution of plusmn0.16 pixels.  相似文献   
970.
Anodic dissolution and the electrochemical migration characteristics of eutectic Sn-Pb solder alloy in deaerated 0.001% NaCl and Na2SO4 solutions were investigated using anodic polarization and water drop tests. Anodic polarization results revealed that a Pb-rich phase was preferentially ionized in deaerated 0.001% NaCl solution and an Sn-rich phase was predominantly ionized in deaerated 0.001% Na2SO4 solution, which coincides well with the composition of the dendrites formed during water drop tests. X-ray diffraction and photoelectron spectroscopy results showed that the surface oxide film formed on pure Sn in deaerated 0.001% NaCl solution is more stable than that formed on pure Sn in deaerated 0.001% Na2SO4 solution. The surface oxide film formed on pure Pb in deaerated 0.001% Na2SO4 solution is more stable than that formed on pure Sn in deaerated 0.001% NaCl solution. Therefore, the quality of the surface film of eutectic Sn-Pb solder in a chemical environment seems to be critical not only for corrosion resistance, but also for electrochemical migration resistance.  相似文献   
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