热红外多光谱遥感技术金矿调查应用研究

根据航空遥感实验获取的TIMS图象,利用计算机图象处理主成分分析和去相关等方法,并依据TIMS成象机制,提取出花岗岩、斜长片麻岩以及粘土化、硅化等蚀变岩岩性和丰富的断层信息,结合金矿化带光谱特征,圈出金矿化异常区,同时TIMS图象也显示了该地区北北东向金矿成矿主断层控制金矿化的规律,现有分析成果表明热红外多光谱扫描仪所获得的图象数据在岩性和金矿化带的识别上,以及增强断层信息方面有较好效果.     

PECVD法低温形成新型SiO_xN_y薄膜的界面特性研究

研究了等离子体增强化学气相淀积（PECVD）方法低温形成新型SIOxNy薄膜的界面特性。研究侧重于PECVDSiOxNy薄膜良好界面特性的控制，探索出界面特性与微观组份、衬底工作温度、反应室气压、退火致密、金属化后退火的相互关系。同时给出了获取界面等特性优良的PECVDSiOxNy薄膜的最优化工艺条件，并对实验结果进行了理论分析与讨论。     

导电衬垫材料的研究与发展

导电衬垫材料是电子设备中应用最为广泛的一类屏蔽材料，在抑制电子设备缝隙电磁泄漏方面发挥了重要作用。文章结合作者的科研工作，对于衬垫材料的抑制机理、材料类型、屏蔽特性、屏效计算、应用技术、测试方法等关键技术进行了综述，并提出了将来研究发展的方向。     

气压高度表模拟器的研究

文中介绍了一种气压高度表模拟器，它能够对高度表的气路特性同时进行静态，动脉模拟。检验气压高度表的静，动态特性，其方法简单经济，可靠性高，可重复性高。     

用于多种组装技术的厚膜导体复合结构

厚膜导体Ｐｄ－Ａｇ／Ａｕ、Ｐｔ－Ｐｄ－Ａｕ／Ａｕ平面复合结构，Ｐｄ－Ａｇ／Ａｕ立体复合结构可使多种组装技术相互兼容。立体复合结构还可有效地降低导体线电阻，减少线损耗。而且，其超声键合性尤佳     

频谱分析仪在射电法测量天线增益和G／T值中的应用

本文给出了频谱分析仪在射电法测量天线增益和Ｇ／Ｔ值中的应用方法以及计算公式，并对测量误差进行了分析，讨论了ＬＮＡ的噪声温度与Ｙ因子大小的关系，给出了对测量精度的影响和常用不同频段可测天线口径的下限。     

不同退火温度下Mo/4H-SiC肖特基接触界面特性分析

为研究退火温度对肖特基接触界面特性的影响,在不同温度下测试了不同退火温度处理的Mo/4H-SiC肖特基接触的I-V及C-V特性.根据金属-绝缘层-半导体(MIS)结构二极管模型理论,认为在金属与半导体间存在薄介质层,通过估算介质层电容值,得到了肖特基接触界面态密度(N88)的能级分布情况,N8s约为1012 eV-1·cm-2量级.退火温度升高,N8s的能级分布靠近导带底;测试温度升高,Ns8增加且其能级分布远离导带底.利用X射线光电子能谱(XPS)分析表征肖特基接触界面态化学组分,分析结果证实接触界面存在SiO.SiO组分随退火温度的升高而减少,在退火温度为500℃及以上时检测到Mo-C成分,说明Mo与4H-SiC发生反应.     

Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

Synthesis of functional metal chalcogenide (GaSe) nanosheet networks by stoichiometric transfer of laser‐vaporized material from bulk GaSe targets is presented. Uniform coverage of interconnected, crystalline, and photoresponsive GaSe nanosheets in both in‐plane and out‐of‐plane orientations are achieved under different ablation conditions. The propagation of the laser‐vaporized material is characterized by in situ ICCD‐imaging. High (1 Torr) Ar background gas pressure is found to be crucial for the stoichiometric growth of GaSe nanosheet networks. Individual 1–3 layer GaSe triangular nanosheets of ≈200 nm domain size are formed within 30 laser pulses, coalescing to form nanosheet networks in as few as 100 laser pulses. The thickness of the deposited networks increases linearly with pulse number, adding layers in a two‐dimensional (2D) growth mode. GaSe nanosheet networks show p‐type semiconducting characteristics with mobilities reaching as high as 0.1 cm²V^?1s^?1. Spectrally‐resolved photoresponsivities and external quantum efficiencies range from 0.4 AW^?1 and 100% at 700 nm, to 1.4 AW^?1 and 600% at 240 nm, respectively. Pulsed laser deposition under these conditions appears to provide a versatile and rapid approach to stoichiometrically transfer and deposit functional networks of 2D nanosheets with digital thickness control and uniformity for a variety of applications.     

基于狄拉克半金属宽带的可调谐太赫兹偏振器

提出了一种基于狄拉克半金属超材料的双开口环结构的宽带偏振器,研究了狄拉克半金属费米能级以及中间介质厚度对偏振转换性能的影响。结果表明:当中间介质厚度为22μm,费米能级为70meV时,在1.44THz和1.95THz两个谐振频率处,偏振转换效率为100%;当中间介质厚度为22μm时,随着狄拉克半金属费米能级从64meV增加到70meV,高低两个谐振峰均产生蓝移;当狄拉克半金属费米能级为70meV时,随着基底介质厚度从19μm增加到22μm,低频处的谐振峰未移动,高频率点处的谐振峰红移。     

雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.