塑料助剂产业前景看好(二)

2006年我国热稳定剂总产量约30万t,同比增长9.3%。钙/锌复合稳定剂的产量增长很快,产量和表观消费量分别增长50%和33%。钙/锌复合稳定剂是较为理想的环保型热稳定剂,应集中力量研究其最佳复合配方和完善制备工艺。全世界的阻燃剂消费量已超过120万t,我国将以10%的速度快速增长。磷系阻燃剂是很有发展前途的阻燃剂品种。     

火箭炮位置伺服系统的神经网络监督控制

火箭炮发射架位置伺服系统中存在燃气流冲击力矩、参数时变、外部扰动等非线性因素的作用,针对传统PID控制难以在此复杂工况下取得良好控制效果的缺点,文中设计了基于传统PID控制的RBF神经网络监督控制器,完成了神经网络离线样本的选取和训练算法的改进,利用神经网络自学习、自整定能力增强系统的自适应能力。仿真结果表明此复合控制策略可以有效提高系统的控制品质。     

叶片抛光表面粗糙度与残余应力优化分析

为了改善发动机叶片的表面粗糙度与残余应力,以提高其工作寿命和机械性能,采用单因素实验结合表面微观形貌分析了各工艺参数对粗糙度与表面残余应力的影响规律;设计关于抛光后钛合金叶片表面粗糙度与残余应力的正交试验,结合单因素实验,分别建立粗糙度与残余应力预测模型,根据预测模型对粗糙度与残余应力进行敏感性分析并划分稳定域;通过灰...     

基于触摸屏的数码一体机人机界面设计与实现

介绍了在K5130数码一体机中利用触摸屏的人机界面的系统设计,提出了一种新的字库内容的数据组织方法及实现多文种显示切换的基本算法,可实现多个任意文种界面显示和切换,并对多文种显示程序软件设计流程做了简要描述。阐述了电阻技术触摸屏的编程应用设计,提出了五点法解决触摸屏坐标校正,详细阐述了触摸屏的坐标计算、校正、触摸区域划分、触摸精度的选择及触摸区域的判定。     

分形天线的研究进展

论述了分形天线的发展状况，介绍了分形天线的分析方法和最新 的研究成果。天线的分形设计是电磁理论与几何学的融合。分形天线可以实现多频工作和尺寸减缩，在军用与民用方面都有很大的发展潜力。     

Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells

Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm² V^?1 s^?1), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □^?1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In₂O₃) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm^?2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.     

Matisse: A System-on-Chip Design Methodology Emphasizing Dynamic Memory Management

MATISSE is a design environment intended for developing systems characterized by a tight interaction between control and data-flow behavior, intensive data storage and transfer, and stringent real-time requirements. Matisse bridges the gap from a system specification, using a concurrent object-oriented language, to an optimized embedded single-chip hardware/software implementation. Matisse supports stepwise exploration and refinement of dynamic memory management, memory architecture exploration, and gradual incorporation of timing constraints before going to traditional tools for hardware synthesis, software compilation, and inter-processor communication synthesis. With this approach, specifications of embedded systems can be written in a high-level programming language using data abstraction. Application of MATISSE on telecom protocol processing systems in the ATM area shows significant improvements in area usage and power consumption.     

Impact of growth rate on the quality of ZNS-MQW InGaAsP/InP laser structures grown by LP-MOVPE

We investigated the influence of the growth rate on the quality of zero-net-strained InGaAsP/InGaAsP/InP multiquantum well structures for 1.55 μm emission grown by low pressure metalorganic vapor phase epitaxy. The samples consisted of fixed compressive strained wells (ɛ=+1%) and tensile strained barriers (ɛ=−0.5%) grown with different quaternary bandgap wavelengths (λ_B=1.1–1.4 μm). Using higher growth rates, we obtained for the first time high quality zero net strained multi quantum well structures, regardless having constant group V composition in the well and barriers. The samples were analyzed by x-ray diffraction, photoluminescence and atomic force microscopy techniques. The amplitude of surface modulation roughness along [011] direction decreased from 20 nm to 0.53 nm with increasing growth rate and/or quaternary compositions grown outside the miscibility gap. A new deep PL broad emission band strongly correlated with the onset of wavy layer growth is also reported. Broad area and ridge waveguide lasers with 10 wells exhibited low losses (34 cm⁻¹) and low threshold current densities at infinite cavity length (1020 A·cm⁻² and 1190 A·cm⁻², respectively).