Vacuum Drying of Common Date Pulp Cubes

Drying ability of date (Phoenix dactylifera L.) pulp cubes from three Algerian common varieties (Mech-Degla, Degla-Beida, and Frezza) were investigated. Drying process was carried out under partial vacuum (200 mbar) at 60, 80, and 100°C. Compared to the Newton model, the Henderson and Pabis model better described drying kinetic of Mech-Degla and Frezza pulps at 60 and 80°C with a mean relative error (MRE) not higher than 6.07%. The same model fits experimental data at 60°C for Degla-Beida (R² = 0.988; MRE = 6.07) as well as at 100°C for only Mech-Degla (R² > 0.98, MRE = 8.61%).     

Study and improvement of interfacial properties in a MIS structure based on p-type InP

Indium phosphide is one of the most promising candidates among the available III-V semiconducting compounds for the development of MIS technology. This is based on the availability of InP substrates and the relatively large band gap. Before the deposition of the insulator, the InP surface must be treated and well passivated (Surf Interface Anal 20 (1993) 803; J Appl Phys 67 (1990) 4173). We have shown that a InSb buffer layer can reduce the phosphorus atom migration and the concentration of defects at the interface. We have studied and characterized electrically two series of substrates using p-type InP, the first one with thin and the second with thick insulator films. The results obtained show clearly the reduction of the defects in the thicker structures protected by the InSb buffer layer.