全文获取类型
收费全文 | 129332篇 |
免费 | 3721篇 |
国内免费 | 558篇 |
专业分类
电工技术 | 1449篇 |
综合类 | 2370篇 |
化学工业 | 20909篇 |
金属工艺 | 6546篇 |
机械仪表 | 5796篇 |
建筑科学 | 3190篇 |
矿业工程 | 585篇 |
能源动力 | 3173篇 |
轻工业 | 7269篇 |
水利工程 | 1516篇 |
石油天然气 | 427篇 |
武器工业 | 2篇 |
无线电 | 16729篇 |
一般工业技术 | 26583篇 |
冶金工业 | 6354篇 |
原子能技术 | 910篇 |
自动化技术 | 29803篇 |
出版年
2023年 | 537篇 |
2022年 | 606篇 |
2021年 | 1476篇 |
2020年 | 1071篇 |
2019年 | 1178篇 |
2018年 | 15446篇 |
2017年 | 14381篇 |
2016年 | 11360篇 |
2015年 | 1868篇 |
2014年 | 2302篇 |
2013年 | 3183篇 |
2012年 | 6238篇 |
2011年 | 12853篇 |
2010年 | 10693篇 |
2009年 | 8241篇 |
2008年 | 9265篇 |
2007年 | 9662篇 |
2006年 | 2135篇 |
2005年 | 2868篇 |
2004年 | 2641篇 |
2003年 | 2621篇 |
2002年 | 1829篇 |
2001年 | 1226篇 |
2000年 | 1169篇 |
1999年 | 982篇 |
1998年 | 1606篇 |
1997年 | 1017篇 |
1996年 | 846篇 |
1995年 | 565篇 |
1994年 | 471篇 |
1993年 | 414篇 |
1992年 | 301篇 |
1991年 | 296篇 |
1990年 | 258篇 |
1989年 | 241篇 |
1988年 | 212篇 |
1987年 | 168篇 |
1986年 | 119篇 |
1985年 | 115篇 |
1984年 | 92篇 |
1983年 | 63篇 |
1982年 | 38篇 |
1981年 | 39篇 |
1977年 | 38篇 |
1976年 | 61篇 |
1968年 | 47篇 |
1966年 | 45篇 |
1965年 | 46篇 |
1955年 | 63篇 |
1954年 | 68篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
121.
Accidents in different complex sociotechnical systems are rarely compared using the same theoretical framework for risk management. We conducted a comparative analysis of two Canadian public health disasters involving drinking water distribution systems, the North Battleford Cryptosporidium parvum outbreak in April 2001 and the Walkerton E. coli outbreak in May 2000. Both accidents resulted from a complex interaction between all levels of a complex sociotechnical system. However, the low-level physical and individual factors differed in the two cases, whereas, the high-level governmental and regulatory factors tended to be the same. These findings may have implications for the design of public policies to minimize risk in complex sociotechnical systems. 相似文献
122.
Bong Keun Kim Wan Kyun Chung 《Industrial Electronics, IEEE Transactions on》2003,50(6):1207-1216
Disturbance-observer (DOB)-based controller design is one of the most popular methods in the field of motion control. In this paper, the generalized disturbance compensation framework, named the robust internal-loop compensator (RIC) is introduced and an advanced design method of a DOB is proposed based on the RIC. The mixed sensitivity optimization problem, which is the main issue of DOB design, is also solved through the parametrization of the DOB in the RIC framework. Differently from conventional methods, the Q-filter is separated from the mixed sensitivity optimization problem and a systematic design law for the DOB is proposed. This guarantees the robustness and optimality of the DOB and enables the design for unstable plants. 相似文献
123.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献
124.
An antenna array for wideband operation (up to 70%) is presented. The structure has low windloading area and consists of parallel printed circuit boards (PCB) with microstrip dipoles, feed network and metal fences placed between the PCBs. The low profile, low weight antenna array forms the main beam and three difference patterns for sidelobe cancellation. Experimental results are compared with calculations for both microstrip dipole and array 相似文献
125.
Kang-Ngee Chia Hea Joung Kim Lansing S. Mangione-Smith W.H. Villasensor J. 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》1998,6(3):364-371
Under the Mojave configurable computing project, we have developed a system for achieving high performance on an automatic target recognition (ATR) application through the use of configurable computing technology. The ATR system studied here involves real-time image acquisition from a synthetic aperture radar (SAR). SAR images exhibit statistical properties which can be used to improve system performance. In this paper, the Mojave configurable computing system uses field programmable gate arrays (FPGA's) to implement highly specialized circuits while retaining the flexibility of programmable components. A controller sequences through a set of specialized circuits in response to real-time events. Computer-aided design (CAD) tools have been developed to support the automatic generation of these specialized circuits. The resulting configurable computing system achieves a significant performance advantage over the existing solution, which is based on application specific integrated circuit (ASIC) technology 相似文献
126.
127.
OBJECTIVE: The aim of this study was to demonstrate the MR characteristics of non-Hodgkin lymphoma of the skull base to help in the differential diagnosis of this neoplasm from other conditions. MATERIALS AND METHODS: MR of five patients, 7-64 years old, with pathologically proved lymphomas of the skull base were reviewed. Three cases had primary skull base lesions involving the sphenoid bone and the cavernous sinus. One case with a nasal cavity lesion involving the skull base and one with a relapsing skull base lesion of previously treated tonsillar lymphoma were included. RESULTS: The lesions had signal intensities that were similar to that of gray matter of brain on both T1- and T2-weighted imaging. Bilateral cavernous sinuses were involved with encasement of internal carotid arteries in every case. Postcontrast MR showed homogeneous enhancement of the tumor with dural infiltration along the planum sphenoidale, clivus, or tentorium. The clivus was destroyed or replaced by tumors in adult cases but in two children the clivus was preserved with intact sphenooccipital synchondrosis. In one case the tumor extended to the extracranial portion through the jugular foramen. CONCLUSION: The MR findings of a permeative lesion of the skull base, invasion of the cavernous sinus without arterial narrowing, infiltration along the dural surface, and an iso- or hypointensity with brain on T2-weighted imaging should suggest lymphoma. 相似文献
128.
Zhengmao Ye Campbell J.C. Zhonghui Chen Eui-Tae Kim Madhukar A. 《Quantum Electronics, IEEE Journal of》2002,38(9):1234-1237
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W. 相似文献
129.
130.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献