Laboratory simulated slipstream testing of novel sulfur removal processes for gasification application

The Wabash River Integrated Methanol and Power Production from Clean Coal Technologies (IMPPCCT) project is investigating an Early Entrance Coproduction Plant (EECP) concept to evaluate integrated electrical power generation and methanol production from coal and other carbonaceous feedstocks. Research, development and testing (RD&T) that is currently being conducted under the project is evaluating cost effective process systems for removing contaminants, particularly sulfur species, from the generated gas which contains mainly synthesis gas (syngas), CO₂ and steam at concentrations acceptable for the methanol synthesis catalyst. The RD&T includes laboratory testing followed by bench-scale and field testing at the SG Solutions Gasification Plant located in West Terre Haute, Indiana. Actual synthesis gas produced by the plant was utilized at system pressure and temperature for bench-scale field testing.     

A 16-Mb MRAM featuring bootstrapped write drivers

A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM process adder. The chip, the highest density MRAM reported to date, utilizes a 1.42/spl mu/m/sup 2/ 1-transistor 1-magnetic tunnel junction (1T1MTJ) cell, measures 79 mm/sup 2/ and features a /spl times/16 asynchronous SRAM-like interface. The paper describes the cell, architecture, and circuit techniques unique to multi-Mb MRAM design, including a novel bootstrapped write driver circuit. Hardware results are presented.     

Advanced thin-film silicon-on-sapphire technology: microwavecircuit applications

This paper reviews the prospects of thin-film silicon-on-sapphire (TFSOS) CMOS technology in microwave applications in the 1-5 GHz regime and beyond and presents the first demonstration of microwave integrated circuits based on this technology, MOSFET's optimized for microwave use, with 0.5-μm optically defined gate lengths and a T-gate structure, have f_t values of 25 GHz (14 GHz) and f_max values of 66 GHz (41 GHz) for n-channel (p-channel) devices and have noise figure values below 1 db at 2 GHz, some of the best reported performance characteristics of any silicon-based MOSFET's to date. On-chip spiral inductors exhibit quality factors above ten. Circuit performance compares favorably with that of other CMOS-based technologies and approach performance levels similar to those obtained by silicon bipolar technologies. The results demonstrate the significant potential of this technology for microwave applications     

An Engineering Design Curriculum for the Elementary Grades

The United States has historically excelled in the design of products, processes and new technologies. Capitalizing on this historical strength to teach applied mathematics and science has many positive implications on education. First, engineering design can be used as a vehicle for addressing deficiencies in mathematics and science education. Second, as achievement in mathematics and science is enhanced, a greater number of students at an earlier age will be exposed to technical career opportunities. Third, enhancing elementary and secondary curricula with engineering design can attract underrepresented populations, such as minorities and females, to engineering as a profession. This paper describes a new and innovative engineering design curriculum, under development in the Austin Independent School District (AISD) in Austin, TX. The philosophic goals upon which the curriculum is based include: integrating the design problem-solving process into elementary schools, demonstrating the relationship of technical concepts to daily life, availing teachers with instructional strategies for teaching applied (as opposed to purely theoretical) science and mathematics, and teaching teamwork skills that are so greatly needed in industry and everyday life. Based on these goals, kindergarten, first grade, and second grade engineering design lessons have been piloted in AISD, in conjunction with a University of Texas program for teacher enhancement and preparation.     

Accelerator beam energy calibration with the Al(p, n) and Al(p, γ) reactions

The energies of resonances in the ²⁷Al(p, γ) reaction at 992 and 1317 keV and of the threshold of the ²⁷Al(p, n) reaction at 5804 keV have been measured accurately with respect to a 1 V standard. Both calibration energies and energies suitable for Q-value calculations are given. Corrections are made for the effects of the energy distribution of the proton beam, of nonuniform energy loss of the protons in the target and of ionisation of the target atoms.     

Enzymes of the gamma-glutamyl cycle are programmed in utero by maternal nutrition

Regenerative axon growth in peripheral neurons is accompanied by increased expression of the growth-associated protein GAP-43. We examined the increase of GAP-43 immunoreactivity in DRG neurons following lesions at different distances along the sciatic nerve, using immunocytochemistry. To control for the variable involvement of DRG axons following injury at different sites, injured neurons were identified by retrograde labeling with Fluoro-Gold. GAP-43 labeling was similar for proximal, distal, and far-distal injuries when only injured neurons are considered. Our results stand in contrast to studies which show that GAP-43 upregulation in neurons of the central nervous system occurs only when lesions are made close to the cell body. This suggests that the mechanisms which control GAP-43 expression following injury differ between central and peripheral neurons.