单一5V电源高速放大器针对高分辨率视频而优化

人们不断要求视频运算放大器用更少的资源做更多的事情,就像要求设计这些放大器的优良设计师一样.为了实现更高的视频分辨率,需要更高的模拟视频信号带宽,因而需要更快的运算放大器.同时,设计师们还在不停地寻找以更低的电压甚至是单电源轨来实现更高分辨率的方法.     

用于照明设备的高亮度LED驱动

随着高亮度(HB)LED效率的不断提高,即流明/瓦特(Lm/W)比的增加,越来越多的照明应用开始选择高亮度LED,例如汽车的外灯(日间行车灯,近光灯、远光灯)和普通照明设备等。LED生产厂家最近推出的高亮度LED的效率已经超过80Lm/W。因此,在照明设备中可以利用LED替换传统的卤素灯,例如MR16聚光灯。从传统的卤素灯过渡到高亮度LED可以大大降低功耗,     

Robustness of quantitative compressive sensing MRI: the effect of random undersampling patterns on derived parameters for DCE- and DSC-MRI

Compressive sensing (CS) in Cartesian magnetic resonance imaging (MRI) involves random partial Fourier acquisitions. The random nature of these acquisitions can lead to variance in reconstruction errors. In quantitative MRI, variance in the reconstructed images translates to an uncertainty in the derived quantitative maps. We show that for a spatially regularized 2 ×-accelerated human breast CS DCE-MRI acquisition with a 192 (2) matrix size, the coefficients of variation (CoVs) in voxel-level parameters due to the random acquisition are 1.1%, 0.96%, and 1.5% for the tissue parameters K(trans), v(e), and v(p), with an average error in the mean of -2.5%, -2.0%, and -3.7%, respectively. Only 5% of the acquisition schemes had a systematic underestimation larger than than 4.2%, 3.7%, and 6.1%, respectively. For a 2 × -accelerated rat brain CS DSC-MRI study with a 64(2) matrix size, the CoVs due to the random acquisition were 19%, 9.5%, and 15% for the cerebral blood flow and blood volume and mean transit time, respectively, and the average errors in the tumor mean were 9.2%, 0.49%, and -7.0%, respectively. Across 11 000 different CS reconstructions, we saw no outliers in the distribution of parameters, suggesting that, despite the random undersampling schemes, CS accelerated quantitative MRI may have a predictable level of performance.     

Monitoring hacker activity with a Honeynet

The Honeynet Project was founded by 30 US based security professionals with the intention of researching the techniques, tools, tactics and motives of hackers and the ‘blackhat’ community in general. A Honeynet Project is an all volunteer, non‐profit organization committed to sharing and learning the motives, tools, and tactics of the hacking community. It is comprised of a number of information security professionals dedicated to honeynet research and information security. This paper outlines the technical configuration of a honeynet, presents some of the key attacks on the honeynet to date and provides recommendations for securing networked systems. Copyright © 2005 John Wiley & Sons, Ltd.     

The Ferroelectric Field Effect within an Integrated Core/Shell Nanowire

The synthesis of cylindrical silicon‐core and ferroelectric oxide perovskite‐shell nanowires and their response characteristics as individual three‐terminal nanoscale electronic devices is reported. The co‐axial nanowire geometry facilitates large ferroelectric field‐effect modulation (>10⁴) of nanowire conductivity following sequential application and removal of an applied dc field. Source‐drain current–voltage traces collected during sweeps of ferroelectric gate potential and switching of the component of shell outward and inward polarization provide direct evidence of ferroelectric coupling on nanowire channel conductance. Despite a very small (1:20) ferroelectric‐to‐semiconductor channel thickness ratio, an unexpectedly strong electrostatic coupling of ferroelectric polarization to channel conductance is observed because of the co‐axial gate geometry and curvature‐induced strain enhancement of ferroelectric polarization.     

Motion measurement errors and autofocus in bistatic SAR.

This paper discusses the effect of motion measurement errors (MMEs) on measured bistatic synthetic aperture radar (SAR) phase history data that has been motion compensated to the scene origin. We characterize the effect of low-frequency MMEs on bistatic SAR images, and, based on this characterization, we derive limits on the allowable MMEs to be used as system specifications. Finally, we demonstrate that proper orientation of a bistatic SAR image during the image formation process allows application of monostatic SAR autofocus algorithms in postprocessing to mitigate image defocus.     

重大转变：DRAM取代SRAM

随着添加到系统设计中的功能的增加,以及所要求的代码和数据RAM容量成比例、甚至更可能的按指数规律的增长,DRAM相比于SRAM的每比特成本优势变得更加难以忽略(如图1).     

Fully Printed Organic Electrochemical Transistors from Green Solvents

To achieve the full potential of scalable and cost‐effective organic electronic devices, developments are being made in both academic and industry environments to move toward continuous solution‐processing techniques that make use of safe and environmentally benign “green” solvents. In this work, the first example of a transistor device that is fully solution processed using only green solvents is demonstrated. This achievement is enabled through a novel multistage cleavable side chain process that provides aqueous solubility for semiconducting conjugated polymers, paired with aqueous inkjet printing of PEDOT:PSS electrodes, and a solution deposited ion gel electrolyte as the dielectric layer. The resulting organic electrochemical transistor devices operate in accumulation mode and reach maximum transconductance values of 1.1 mS at a gate voltage of ? 1 V. Normalizing the transconductance value to the channel dimensions yields g_m/W = 2200 S m^?1 (µC* = 22 F cm^?1 V^?1 s^?1), making these devices suitable for a range of applications requiring small signal amplification such as transistors, biosensors, and ion pumps. This new material design and device process paves the way toward scalable, safe, and efficient production of organic electronic devices.     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.