Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

A 13.56-MHz class-E amplifier with a high-voltage GaN HEMT as the main switching device is demonstrated to show the possibility of using GaN HEMTs in high-frequency switching power applications such as RF power-supply applications. The 380-V/1.9-A GaN power HEMT was designed and fabricated for high-voltage power-electronics applications. The demonstrated circuit achieved the output power of 13.4 W and the power efficiency of 91% under a drain-peak voltage as high as 330 V. This result shows that high-voltage GaN devices are suitable for high-frequency switching applications under high dc input voltages of over 100 V.     

Role of PbSe Structural Stabilization in Photovoltaic Cells

Semiconductor nanocrystals are promising materials for printed optoelectronic devices, but their high surface areas are susceptible to forming defects that hinder charge carrier transport. Furthermore, correlation of chalcogenide nanocrystal (NC) material properties with solar cell operation is not straightforward due to the disorder often induced into NC films during processing. Here, an improvement in long‐range ordering of PbSe NCs symmetry that results from halide surface passivation is described, and the effects on chemical, optical, and photovoltaic device properties are investigated. Notably, this passivation method leads to a nanometer‐scale rearrangement of PbSe NCs during ligand exchange, improving the long‐range ordering of nanocrystal symmetry entirely with inorganic surface chemistry. Solar cells constructed with a variety of architectures show varying improvement and suggest that triplet formation and ionization, rather than carrier transport, is the limiting factor in singlet fission solar cells. Compared to existing protocols, our synthesis leads to PbSe nanocrystals with surface‐bound chloride ions, reduced sub‐bandgap absorption and robust materials and devices that retain performance characteristics many hours longer than their unpassivated counterparts.     

A flexible,reliable, and adaptive timeslot‐based advance bandwidth‐reservation mechanism for media delivery services

Media‐centric networks deal with exchanging large media files between geographical distributed locations with strict deadlines. In such networks, resources need to be available at predetermined timeslots in the future and thus need to be reserved in advance, based on either flexible or fixed timeslot sizes. Reliability of the transfers is also important and can be attained by advance provisioning of redundant reservations. This, however, imposes additional costs, because redundant reservations are rarely in use, causing network resources to be wasted. Further adaptation and network utilization can be achieved at runtime by reutilizing unused reservations for transferring extra data as long as no failure has been detected. In this article, we design, implement, and evaluate a resilient advance bandwidth‐reservation approach based on flexible timeslots, in combination with a runtime adaptation approach. We take into account the specific characteristics of media transfers. Quality and complexity of the proposed approach have been extensively compared with that of a fixed timeslot algorithm. Our simulation results reveal that the highest admittance ratio and percentage of fully transferred requests in case of failures are almost always achieved by flexible timeslots, while the execution time of this approach is up to 17.5 times lower, compared with the approaches with fixed timeslot sizes.     

Residual stress in hydroxyapatite coating: nonlinear analysis and high-energy synchrotron measurements

The thermal deposition of hydroxyapatite (HA) on titanium alloy substrate (Ti-6A1-4V) leads to a structure that has very good osseointegration properties. However, clinical failures have been occasionally reported at the interface between substrate and coating. Lifetime is the main parameter in such prostheses; therefore, in order to improve their quality, it is necessary to evaluate the level of stresses near the interface. The high-energy synchrotron radiation combines the advantages of a bulk analysis and reduced volume of the gauge. The objective of our study was to calculate the residual stress using a nonlinear finite-element model and to measure residual stress level near the interface, in the hydroxyapatite coating and in titanium alloy substrate with a nondestructive and high-resolution experiment. The high-energy synchrotron radiation of the BM16 beam-line at ESRF (Grenoble-France) was used with a resolution of down to 10 micrometers. The experimental measurements validate the results found by means of nonlinear finite-element analysis of the plasma spraying induced stress.     

Extraction and analysis of T waves in electrocardiograms during atrial flutter

Analysis of T waves in the ECG is an essential clinical tool for diagnosis, monitoring, and follow-up of patients with heart dysfunction. During atrial flutter, this analysis has been so far limited by the perturbation of flutter waves superimposed over the T wave. This paper presents a method based on missing data interpolation for eliminating flutter waves from the ECG during atrial flutter. To cope with the correlation between atrial and ventricular electrical activations, the CLEAN deconvolution algorithm was applied to reconstruct the spectrum of the atrial component of the ECG from signal segments corresponding to TQ intervals. The locations of these TQ intervals, where the atrial contribution is presumably dominant, were identified iteratively. The algorithm yields the extracted atrial and ventricular contributions to the ECG. Standard T-wave morphology parameters (T-wave amplitude, T peak-T end duration, QT interval) were measured. This technique was validated using synthetic signals, compared to average beat subtraction in a patient with a pacemaker, and tested on pseudo-orthogonal ECGs from patients in atrial flutter. Results demonstrated improvements in accuracy and robustness of T-wave analysis as compared to current clinical practice.     

Supramolecular Order of Solution‐Processed Perylenediimide Thin Films: High‐Performance Small‐Channel n‐Type Organic Transistors

N,N′‐1H,1H‐perfluorobutyl dicyanoperylenecarboxydiimide (PDIF‐CN₂), a soluble and air stable n‐type molecule, undergoes significant reorganization upon thermal annealing after solution deposition on several substrates with different surface energies. Interestingly, this system exhibits an exceptional edge‐on orientation regardless of the substrate chemistry. This preferential orientation is rationalized in terms of strong intermolecular interactions between the PDIF‐CN₂ molecules. The presence of a pronounced π–π stacking is confirmed by combining near‐edge X‐ray absorption fine structure spectroscopy (NEXAFS), dynamic scanning force microscopy (SFM) and surface energy measurements. The remarkable charge carrier mobility measured in field‐effect transistors, using both bottom‐ and top‐contact (bottom‐gate) configurations, underlines the importance of strong intermolecular interactions for the realization of high performing devices.     

Survey and comparison of message authentication solutions on wireless sensor networks

Security is an important concern in any modern network. This also applies to Wireless Sensor Networks (WSNs), especially those used in applications that monitor sensitive information (e.g., health care applications). However, the highly constrained nature of sensors imposes a difficult challenge: their reduced availability of memory, processing power and energy hinders the deployment of many modern cryptographic algorithms considered secure. For this reason, the choice of the most memory-, processing- and energy-efficient security solutions is of vital importance in WSNs. To date, a number of extensive analyses comparing different encryption algorithms and key management schemes have been developed, while very little attention has been given to message authentication solutions. In this paper, aiming to close this gap, we identify cipher-based Message Authentication Codes (MACs) and Authenticated Encryption with Associated Data (AEAD) schemes suitable for WSNs and then evaluate their features and performance on a real platform (TelosB). As a result of this analysis, we identify the recommended choices depending on the characteristics of the target network and available hardware.     

Optimized ITO-free tri-layer electrode for organic solar cells

The optical properties of ZnO/Ag/ZnO (ZAZ) multilayer structures were numerically modeled and calculated by a FDTD method. Such tri-layers were also manufactured using an ion beam sputtering plant. A good agreement is obtained between modelizations and realizations. The impact of the oxide thicknesses on the optical properties of the ZAZ structures were experimentally and numerically investigated, and allow us to adjust the spectral position of the transmission maximum. The transmission of these structures is optimized up to around 74%, on the whole absorption spectral range of the photoactive P3HT:PCBM bulk heterojunction. The best electrode design is glass/ZnO (30 nm)/Ag (14 nm)/ZnO (30 nm), which presents a sheet resistance of 7 Ω/□. The optimized ZAZ structure was successfully integrated in an organic solar cell as anode. A photovoltaic efficiency of 2.58% is obtained and is compared to an organic solar cell integrating a traditional ITO anode with an efficiency of 2.99%. Numerical calculations of the intrinsic absorption inside each layer of the organic solar cells are performed. Alternative ITO-free electrodes for organic solar cells are demonstrated.     

用于电源测试的精确压控电流阱

为了检测潜在的电源缺陷,必须进行动态和静态测试。这里的简单电流阱可测试低到中功率电源和恒压源。在该应用中,在输入电压范围为0V～5V,电源电压最高为20V时,电流阱可吸收0A～1.5A的电流。该电路的基本部件为一个精密运放IC1,采用Texas Instruments的OPA277。该器件特点为：最大输入偏置电压仅为100μV,最大输入偏置电流为4nA,在-40℃-＋85℃温度范围内温漂较低（图1）。运放IC将其正输入电压与检测电阻RSENSE上的电压进行比较。