消防水箱设计中常见错误及改正措施

根据现行消防技术规范的有关规定，结合建筑工程消防监督审核的工作实践，指出了消防水箱设计中常出现的错误并提出了相应的改正措施。     

Analysis on the Logarithmic Model of Relationships

The logarithmic model is often used to describe the relationships between factors.It often gives good statistical characteristics.Yet,in the process of modeling of soil and water conservation,we find out that this“good”model cannot guarantee good result.In this paper we make an inquiry into the intrinsic reasons.It is shown that the logarithmic model has the property of enlarging or reducing model errors,and the disadvantages of the logarithmic model are analyzed.     

钢包用滑板的热应力有限元分析

连铸钢包使用的滑动激光器是控制连铸生产过程的关键设备之一。为了确定501滑板使用中产生裂纹的原因，抑制裂纹形成，提高滑板使用寿命，本文应用有限元法进行了滑板热应力分析，并与生产中使用的滑板比较，有限元分析显示：在滑板材质一定的情况下，滑板形状以及滑板的预紧能力和固定方式是影响滑板使用寿命的基本因素。     

烧成温度与导电陶瓷电性能关系的研究

本文通过X—射线衍射分析及阻温特性别定等方法研究了SnO2导电陶瓷的晶相组成和电性能与烧成温度的关系。结果表明，随烧成温度提高试样中SnO2金红石型晶体的含量有所增加，试样的材料常数和活化能降低，材料导电性能增强，同时还对导电陶瓷的导电机理进行了探讨。     

液压试验机控制部分的改进

国内许多老式液压材料试验机大都改为计算机控制，但直接用于控制的单片机多数AT89C51／52，并足需要A／D、D／A芯片及存储芯片。存在速度慢、精度低、布置麻烦等缺点。本文探讨把SOC芯片引入其中，目前这样的应用在国内还很少见。     

交换机LS中继全自动维护的实现

环路启动(LS)中继在电力专网中使用非常广泛,人工恢复长时间不拆线的LS中继的维护方式已经不能满足需求,故利用开发工具(Delphi)编写软件实现和交换机通信,自动检测所有LS中继线的状态,自动恢复长时间处于维护忙状态的LS中继。文章介绍了该系统的实现过程及系统中各模块的功能。该系统的实现提高了工作效率,保障了交换网的通信质量。     

电网监控系统(SCADA)历史数据库的研究与开发

电网利用SCADA技术实现了对电网设备的监控以及数据的获取。文中论述了SCADA系统中历史数据库的构架、数据存取接口以及程序实现，介绍了如何分别向数据库存储SCADA的分类数据，并就设计和开发中遇到的一些问题和解决的方法进行了讨论。     

Correlations between the Optical Properties and the Microstructure of TiO_2 Thin Films Prepared by Reactive Electron-beam Evaporation

1　IntroductionInrecentyears ,theoreticalandexperimentalinvesti gationsonthetitaniumoxidefilmsareconductedonac countoftheirremarkableproperties .Titaniumdioxidefilmshaveattractedconsiderableattentiontoapplytomi croelectronicdevices ,opticalthin filmdevice…     

浅析消防联动控制系统设计

分析介绍了消防水泵、电动防火卷帘、防烟排烟设施、非消防电源断电、电梯等设施的联动控制系统的设计方法，并提出了设计中应注意的问题和合理化建议。     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.