Origin of the threshold voltage instability in SiO/sub 2//HfO/sub 2/ dual layer gate dielectrics

The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.     

Postbuckling analysis of plates on an elastic foundation by the boundary element method

The postbuckling behavior of plates on an elastic foundation is studied by using the boundary element method (BEM). A new fundamental solution of lateral deflection is derived through the resolution theory of a differential operator, and a set of boundary element formulae in incremental form is presented. By using these formulae, the BEM solution procedure becomes relatively simple. The results of a number of numerical examples are compared with existing solutions and good agreement is observed. It shows that the proposed method is effective for solving the postbuckling problems of plates with arbitrary shape and various boundary conditions.     

Preparation and gas-sensing characteristics of nanocrystalline spinel zinc ferrite thin films

Zinc ferrite is a promising sensor material. In this paper, thin films of nanocrystalline zinc ferrite were deposited on alumina substrates by nebulization of a 0.01-M solution of a mixture of ZnCl/sub 2/ and FeCl/sub 3/ in ethanol (Zn:Fe=1:2) followed by pyrolysis and annealing in flowing air. The resulting films were characterized by X-ray diffraction and scanning electron microscopy, and the gas-sensing properties of as-deposited films were also investigated.     

基于S5933的PCI总线与8051的接口设计

简要介绍了PCI总线的特点，重点介绍了AMCC公司推出的S593X系列的高性能接口控制器，并通过实践给出基于S5933的PCI总线和8051的接口设计技术。     

降低精炼钢中氢氧含量的探索

主要介绍通过优化炼钢生产工艺,使产品满足新的技术要求:S≤0.010％,P≤0.015％.[H]≤0.0002％,[O]≤0.0045％,[N]≤0.0055％。     

农村电网的无功功率补偿

阐述农村电网无功补偿的意义 .针对农村电网和农村用户的特点 ,提出在农网改造中 ,对各级电力线路 ,以提高农村电网的功率因数 ,保证农网安全、可靠和经济运行 .和电力用户进行无功补偿的方法     

DLL23XA双侧向测井仪的研制

以往双侧向测井仪动态范围小，测量精度低，为此开发了DLL23XA双侧向测井仪。该仪器主要单元采用厚膜电路，稳定性、一致性好；深、浅屏流源采用可变功率控制，提高了仪器的动态范围。仪器采用3506P例进行数据传输，可方便地配接各种地面系统。     

微机传真系统

本文介绍了集传真技术、通信技术、微型计算机技术于一体的微机传真系统，提出了微机传真系统在硬件接口及报表识别上的实现方法。     

管内含蜡原油降温过程中的放热问题

利用两种管段和两种原油，进行了降温过程自然对流放热参数的测试和研究。采用滞流点确定降温第二阶段中凝油边界的移动，区分管内的对流区与导热区。由实验数据回归得到适用于含蜡原油降温过程的自然对流放热准则方程式。用该方程式计算的自然对流放热系数值比按无限空间自然对流准则方程式计算值小20％～50％。