Characteristics and optimization of 4H-SiC MESFET with a novel p-type spacer layer incorporated with a field-plate structure based on improved trap models

A novel structure of 4H-SiC MESFETs is proposed that focuses on surface trap suppression.Characteristics of the device have been investigated based on physical models for material properties and improved trap models.By comparing with the performance of the well-utilized buried-gate incorporated with a field-plate （BG-FP） structure,it is shown that the proposed structure improves device properties in comprehensive aspects. A p-type spacer layer introduced in the channel layer suppresses the surface trap effect and reduces the gate-drain capacitance(C_gd) under a large drain voltage.A p-type spacer layer incorporated with a field-plate improves the electric field distribution on the gate edge while the spacer layer induces less C_gd than a conventional FP.For microwave applications,4H-SiC MESFET for the proposed structure has a larger gate-lag ratio in the saturation region due to better surface trap isolation from the conductive channel.For high power applications,the proposed structure is able to endure higher operating voltage as well.The maximum saturation current density of 460 mA/mm is yielded.Also,the gate-lag ratio under a drain voltage of 20 V is close to 90%.In addition,5%and 17.8%improvements in f_T and f_max are obtained compared with a BG-FP MESFET in AC simulation,respectively.Parameters and dimensions of the proposed structure are optimized to make the best of the device for microwave applications and to provide a reference for device design.     

Imaging‐Guided Combined Photothermal and Radiotherapy to Treat Subcutaneous and Metastatic Tumors Using Iodine‐131‐Doped Copper Sulfide Nanoparticles

Combining different therapeutic strategies to treat cancer by overcoming limitations of conventional cancer therapies has shown great promise in both fundamental and clinical studies. Herein, by adding ¹³¹I when making iodine‐doped CuS nanoparticles, CuS/[¹³¹I]I nanoparticles are obtained, which after functionalization with polyethylene glycol (PEG) are used for radiotherapy (RT) and photothermal therapy (PTT), by utilizing their intrinsic high near‐infrared absorbance and the doped ¹³¹I‐radioactivity, respectively. The combined RT and PTT based on CuS/[¹³¹I]I‐PEG is then conducted, achieving remarkable synergistic therapeutic effects as demonstrated in the treatment of subcutaneous tumors. In the meanwhile, as revealed by bimodal nuclear imaging and computed tomography (CT) imaging, it is found that CuS/[¹³¹I]I‐PEG nanoparticles after being injected into primary solid tumors could migrate to and retain in their nearby sentinel lymph nodes. Importantly, the combined RT and PTT applied on those lymph nodes to assist surgical resection of primary tumors results in remarkably inhibited cancer metastasis and greatly prolonged animal survival. In vivo toxicology studies further reveal that our CuS/I‐PEG is not obviously toxic to animals at fourfold of the treatment dose. This work thus demonstrates the potential of combining RT and PTT using a single nanoagent for imaging‐guided treatment of metastatic tumors.     

Optimal joint utility based load balancing algorithm for heterogeneous wireless networks

The rapid development of mobile broadband services with continuously increasing traffic volumes has resulted in a number of challenges, including ubiquitous network coverage, high bandwidth, and reliable services for reasonable price, etc. To address these challenges, evolved packet system (EPS) is proposed as the evolution of the packet core network. While resource management and load balancing issues in EPS are discussed in 3GPP standardization, relatively few research works consider mechanism design for load information monitoring and evaluation. Furthermore, even though some load balancing algorithms have been proposed for integrated networks, the load balancing scheme design which achieves the optimization of joint system performance has not been extensively studied. In this paper, an inter-access system anchor based load balancing mechanism is introduced which performs load monitoring and evaluation for access gateways and networks, and an optimal load balancing algorithm is proposed for heterogeneous integrated networks. To characterize the performance of integrated networks, the concept of utility function is introduced and the comprehensive performance of integrated networks which support both single type service and multimedia service is modeled mathematically. Applying vertical handoff as an efficient mechanism for achieving load balancing, the optimal number of handoff users is obtained through solving the optimization problem. Numerical results demonstrate that load balancing between access networks can be achieved, and the optimal number of handoff users corresponding to the maximal joint network utility can be obtained.     

高速光接收组件同轴结构封装关键技术研究

在接入网中,低成本、小尺寸的同轴结构封装10 Gb/s光接收组件起着非常重要的作用。在微波频段,封装器件引入的寄生参数已经成为制约其高频特性的主要因素之一。基于传输线理论,建立了包含芯片、金丝、管座的小信号等效电路模型。等效电路元件与实际封装器件有对应的关系。组件高频特性随元件参数值变化而变化。仿真结果表明金丝对其高频特性影响很严重。为了减小金丝电感,提出一种优化方案。并结合实际工艺条件,制作了样品,实验结果表明该样品的传输速率达到10 Gb/s,满足10 Gb/s光网络传输的要求。     

Field-Effect Chiral Anomaly Devices with Dirac Semimetal

Charge-based field-effect transistors (FETs) greatly suffer from unavoidable carrier scattering and heat dissipation. Analogous to valley degree of freedom in semiconductors, chiral anomaly current in Weyl/Dirac semimetals is theoretically predicted to be nearly nondissipative over long distances, but still lacks experimental ways to efficiently control its transport. Here, field-effect chirality devices are demonstrated with Dirac semimetal PtSe₂, in which its Fermi level is close to the Dirac point in the conduction band owing to intrinsic defects. The chiral anomaly is further corroborated by the planar Hall effect and nonlocal valley transport measurement, which can also be effectively modulated by external fields, showing robust nonlocal valley transport with micrometer diffusion length. Similar to charge-based FETs, the chiral conductivity in PtSe₂ devices can be modulated by electrostatic gating with an ON/OFF ratio of more than 10³. Basic logic functions in the devices are also demonstrated with electric and magnetic fields as input signals.     

基于介质顶阵的到达角估计

由于介质顶对来波的发散作用,到达平面阵的波是非平面波。本文研究基于介质顶阵的到达角(DOA)估计方法。通过对采样协方差矩阵进行远场近似(FFA)处理,用高分辨特征结构技术(MUSIc算法)进行DOA估计,得到了比较好的结果。计算机模拟结果证实了该方法的有效性。     

变厚度非平面介质罩发散系数的计算几何光学法

介质共形顶相控阵天线利用变厚度介质透镜改变相控阵波束扫描方向,理论上来说可到达半空域或更大,是一种适用于弹载、机载雷达系统的天线。本文较详细地讨论了介质罩对电磁波的发散系数的计算,给出了分析非平面变厚度分层介质对电磁波反射、折射的两种有效方法,并进行了比较。     

遥感技术的应用及发展

高科技、环境资源、信息工程、可持续发展与经营意识和市场经济正成为当今世界现代化高度融合、密不可分的决定性力量。遥感技术作为集成了众多高科技的现代科学,在各个领域应用的深度和广度,正在飞速扩展着。本文就其在若干方面的最新进展作一综述。     

Diode-pumped ytterbium-doped Sr5(PO4)3F laser performance

The performance of the first diode-pumped Yb³⁺-doped Sr ₅(PO₄)₃F (Yb:S-FAP) solid-state laser is discussed. An InGaAs diode array has been fabricated that has suitable specifications for pumping a 3×3×30 mm Yb:S-FAP rod. The saturation fluence for diode pumping was deduced to be 5.5 J/cm ² for the particular 2.8 kW peak power diode array utilized in our studies. This is 2.5× higher than the intrinsic 2.2 J/cm ² saturation fluence as is attributed to the 6.5 nm bandwidth of our diode pump array. The small signal gain is consistent with the previously measured emission cross section of 6.0×10^-20 cm², obtained from a narrowband-laser pumped gain experiment. Up to 1.7 J/cm³ of stored energy density was achieved in a 6×6×44 mm Yb:S-FAP amplifier rod. In a free running configuration, diode-pumped slope efficiencies up to 43% (laser output energy/absorbed pump energy) were observed with output energies up to ~0.5 J per 1 ms pulse. When the rod was mounted in a copper block for cooling, 13 W of average power was produced with power supply limited operation at 70 Hz with 500 μs pulses