Spatial Wavefunction-Switched (SWS) InGaAs FETs with II–VI Gate Insulators

This paper presents the implementation of a novel InGaAs field-effect transistor (FET), using a ZnSe-ZnS-ZnMgS-ZnS stacked gate insulator, in a spatial wavefunction-switched (SWS) structural configuration. Unlike conventional FETs, SWS devices comprise two or more asymmetric coupled quantum wells (QWs). This feature enables carrier transfer vertically from one quantum well to another or laterally to the wells of adjacent SWS-FET devices by manipulation of the gate voltages (V _g). Observation of an extra peak (near both accumulation and inversion regions) in the capacitance–voltage data in an InGaAs-AlInAs two-quantum-well SWS structure is presented as evidence of spatial switching. The peaks are attributed to the appearance of carriers first in the lower well and subsequently their transfer to the upper well as the gate voltage is increased. The electrical characteristics of a fabricated SWS InGaAs FET are also presented along with simulations of capacitance–voltage (C–V) behavior, showing the effect of wavefunction switching between wells. Finally, logic operations involving simultaneous processing of multiple bits in a device, using coded spatial location of carriers in quantum well channels, are also described.     

Simulation of hole-mobility in doped relaxed and strained Ge

As silicon CMOS begins to reach the limits of its performance, alternative channel materials are being considered. Thus there is renewed interest in employing Germanium for p-MOSFETs, due to the significant improvement in hole mobility as compared to silicon for undoped materials. Of considerable interest from a device point of view is the transport in doped layers. We investigate hole transport at high carrier-densities in doped Germanium layers using a bulk 6-band k·p Monte Carlo simulator, and show that both dynamic and multi-ion screening play a significant role in describing the resulting transport.     

Preparation and photoluminescence properties of γ-KCaPO4: Eu phosphors for near UV-based white LEDs

Novel whitish-blue phosphors based on a phosphate host matrix, γ-KCaPO₄: Eu²⁺, were prepared by a conventional solid-state reaction method using slightly phosphorus deficient conditions and their photoluminescence properties were investigated. The concentration quenching process, temperature dependence of the luminescence and decay curve were also investigated. The γ-KCaPO₄: Eu²⁺ phosphor was efficiently excited by UV-Visible light at wavelengths of 200-450 nm and exhibited a bright whitish-blue emission with a maximum peak wavelength of 473 nm. All of these characteristics suggest that the γ-KCaPO₄: Eu²⁺ phosphors combined with red phosphors could be applicable to near UV-based white LEDs, i.e., only two kinds of phosphor powders are needed for the formation of white light.     

A theoretical and experimental investigation of the tool-tip vibration and its influence upon surface generation in single-point diamond turning

This paper presents a theoretical and experimental investigation of the influence of tool-tip vibration on surface generation in single point diamond turning (SPDT). Although it is well known that the relative vibration between the tool and the workpiece plays an important role in the surface generation in single-point diamond turning, most of the prior work has been focused on studying the relative tool-work vibration in the infeed (thrust force) direction while the significant contribution of the effect of the tool-tip vibration in the cutting force direction has been overlooked. In the present study, two characteristic peaks (twin peaks) are identified and found to be corresponding to the tool-tip vibrations by power spectrum density (PSD) analyses. The vibrations possess the features of small amplitude but high frequency. A physical model is proposed to capture the dominant factor based on the characteristic and it reveals that the twin peaks are attributed by the impact between the tool tip and workpiece and the process damping effect. Hence, a geometric model of surface roughness is proposed to take account of tool-tip vibration and it is verified through a series of experiments. The simulation results have been found to agree well with the experimental results.     

Management of the variability of vibration response levels in mistuned bladed discs using robust design concepts. Part 2: Tolerance design

The mistuning pattern on a bladed disc is controlled in Part 2 of the two-part article either by (i) imposing a small maximum allowable mistune according to the small mistuning approach or (ii) incorporating non-identical blades of specific patterns, known as the intentional mistuning approach. These approaches resemble the tolerance design stage of the Taguchi method of robust design. The first-order maximum amplification factor sensitivity in a single-degree-of-freedom (DOF)-per-sector system is derived to support a new definition of the interblade coupling ratio and to illustrate the dependence of the maximum amplification factor sensitivity on design parameters of a bladed disc. It is found that the variability of the forced vibration response levels in flexible bladed discs can be reduced by controlling the degree of mistune within realistic levels. The potential of a “linear” mistuning pattern to become an effective intentional mistuning pattern is evaluated by observing the amplification factors of bladed discs with combined intentional mistuning and additional random mistuning. A tool based on the importance sampling method is used to reduce the computational effort in determining the magnitude of intentional mistuning. Guidelines of designing bladed discs with a lower variability of forced vibration response levels are given according to the findings in casting the blade mistuning problem as a robust design problem.     

刍议历史地段插建建筑形态设计

该文依据历史地段插建建筑与其所处环境之间的三种位置关系,结合具体案例对其形态设计策略进行详细探讨。     

Bandwidth enhancement of transimpedance amplifier by acapacitive-peaking design

Using a capacitive-peaking (C-peaking) technique to increase the bandwidth of a transimpedance amplifier has been proposed. An analytical model for determining the peaking capacitance in the Butterworth-type transimpedance amplifier design has been derived. Based on this approach, we can design a larger bandwidth of a transimpedance amplifier. The low-frequency transimpedance gain in our fabricated amplifier is 0,95 kΩ, and the 3 dB bandwidth of the transimpedance amplifier is enhanced from 1.1 to 2.3 GHz without sacrificing its low-frequency gain by this C-peaking technique     

A 1-V 3.5-mW CMOS switched-opamp quadrature IF circuitry for Bluetooth receivers

A 1-V switched-capacitor (SC) quadrature IF circuitry for Bluetooth receivers is demonstrated using switched-opamp technique. To achieve double power efficiency while maintaining low sensitivity to finite opamp gain effects for the SC IF circuitry, half-delay integrator-based filters and /spl Sigma//spl Delta/ modulator have been proposed. The proposed quadrature IF circuitry employs a seventh-order IF filter for channel selection and a third-order /spl Sigma//spl Delta/ modulator for analog-to-digital conversion. A noise-shaping extension technique is employed to enhance the resolution of the low-pass /spl Sigma//spl Delta/ modulator by 16 dB while operating at the same oversampling ratio and power consumption. At a 1-V supply, the quadrature IF circuitry achieves a measured IIP3 of -3 dBm at a nominal gain of 24 dB with a 48-dB variable gain control while consuming a total power dissipation of 3.5 mW.     

An efficient algorithm for electromagnetic scattering from rough surfaces using a single integral equation and multilevel sparse-matrix canonical-grid method

An efficient algorithm for wave scattering from two-dimensional lossy rough surfaces is proposed. It entails the use of a single magnetic field integral equation (SMFIE) in conjunction with a multilevel sparse-matrix canonical-grid (MSMCG) method. The Rao-Wilton-Glisson (RWG) triangular discretization is adopted to better model the rough surface than the pulse basis functions used in the well-established SMCG method. Using the SMFIE formulation, only one unknown per interior edge of the triangular mesh approximating the rough surface is required, and the iterative solution to the moment equation converges more rapidly than that of the conventional coupled equations for dielectric rough surfaces. The MSMCG method extends the applicability of the SMCG method to rougher surfaces. Parallel implementation of the proposed method enables us to model dielectric surfaces up to a few thousand square wavelengths. Simulation results are presented as bistatic scattering coefficients for Gaussian randomly rough surfaces.