InGaN/GaN MQW p–n junction photodetectors

InGaN/GaN multiquantum well (MQW) p–n junction photodetectors with semi-transparent Ni/Au electrodes were fabricated and characterized. It was found that the fabricated InGaN/GaN MQW p–n junction photodetectors exhibit a 20 V breakdown voltage and a 3.5 V forward 20 mA turn on voltage. It was also found that the photocurrent to dark current contrast ratio is higher than 10⁵ when a 0.4 V reverse bias was applied to the InGaN/GaN MQW p–n junction photodetectors. Furthermore, it was found that the maximum responsivity was 1.28 and 1.76 A/W with a 0.1 and 3 V applied reverse bias, respectively.     

接入网蓄电池的维护以及对整流器的要求

该针对阀控密封铅酸蓄电池的特性和使用环境，较全面的论述了接入网点蓄电池的选型要求与维护方式。     

Calculation of wall heat transfer in pipeexpansion turbulent flows

A new modified low-Reynolds-number k-ε turbulence [Chang, Hsieh and Chen (CHC)] model, which possesses the proper near-wall limiting behaviors and is free of the singular defect occurring near the reattachment point when applied to separated flows, is examined for use in wall heat transfer problems in flow with pipe expansion geometry. Another eight low-Reynolds-number k-ε models, found in open literature, are also examined in this study. Attention is specifically focused on the flow region surrounding the reattachment point. Comparative results show that only the CHC model and the model developed by Abe et al. [Abe, Kondoh and Nagano (AKN model)] can yield satisfactory distributions of the Nusselt number along the wall. However, the CHC model adopted the same model constants as conventionally used for the standard k-ε model. Thus, the CHC model is more universal than the AKN model.     

A 4/7 kHz audio bandwidth selectable digital phone interface (DPI)chip with on-chip analog functions and modem

The Digital Phone Interface (DPI) is designed for a new generation of digital telephone terminals for private exchanges, This circuit gives a total solution for all telephone functions, thereby including DSP functions, voice coding/decoding and analog front end, signal generators for DTMF and ringing, a modem for data transfer between terminal and exchange and a multitude of interfaces to communicate to the external world. Besides the normal earpiece micro and speaker, handsfree operation is available by using a selectable input low-noise microphone amplifier and an additional 50 Ω mWLS driver. For the handsfree operation, a digital AGC and anti-oscillation (anti-larsen) function is implemented. The line modem generates a modified RTZ (WAL2) code and is able to cover distances up to 1.5 km. In addition, the component is extensible with external signal processing modules (echo cancelling) and is also able to transfer a 7 kHz speech bandwidth. The device is a mixed analog/digital design produced in a 1.2 μm CMOS technology on 46 mm ² die area and consumes 200 mW     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

Integration of mobile vehicles for automated material handlingusing Profibus and IEEE 802.11 networks

This paper focuses on a method to integrate mobile devices such as a mobile robot, automated guided vehicle, and unmanned container transporter to form an automated material handling system. In this paper, the stationary devices are connected via a Profibus network while the mobile devices are communicating via an IEEE 802.11 wireless LAN. In order to integrate these two networks, a protocol converter is developed on a PC platform that runs two interacting processes with shared internal buffers. The protocol converter performs a role of translator between two different protocols by converting the format of a data frame. In addition to this basic conversion function, the protocol converter has a virtual polling algorithm to reduce the uncertainty involved in accessing the wireless network. Finally, the integrated network. of Profibus and IEEE 802.11 is experimentally evaluated for its data latency and throughput, which shows the feasibility of the Profibus-IEEE 802.11 network for industrial applications involving mobile devices     

A mixed design approach for probabilistic structural durability

In this paper, a mixed approach for probabilistic structural durability design of mechanical systems is proposed. In this approach, a deterministic design optimization that considers structural crack initiation and crack propagation lives at critical points of the structural component as design constraints is performed first. After an optimal design is obtained, a reliability analysis is performed to ascertain if the deterministic optimal design is reliable. If the probability of the failure of the deterministic optimal design is found to be acceptable, a reliability-based design approach that employs a set of interactive design steps, such as trade-off analysis and what-if study, is used to obtain a near-optimal design that is reliable with an affordable computational cost. A 3-D tracked vehicle roadarm is employed to demonstrate the feasibility of the proposed approach.     

Substance use as a robust correlate of school outcome measures for ethnically diverse adolescents of Asian/Pacific Islander ancestry.

School psychologists are generally not provided with the knowledge and skills to address both educational and psychosocial issues of Asian American and Pacific Islander students. The present study is the first of its kind in examining 36 independent (i.e., demographic, social, cultural, psychological) variables in association with four school outcomes (i.e., grade point average, absences, suspensions, and school infractions) with a large sample of Caucasian, Filipino, Native Hawaiian, Japanese, mixed/non-Hawaiian, and "other" Hawai'i high school students (N = 2,833). Given the relatively unique sample in question and the sheer number of variables, an exploratory approach was utilized with the goal of determining the most robust independent variables, with the unique inclusion of Hawaiian cultural identification. A cross-validation technique was used, whereby stepwise regressions were performed for each of two cross-validation samples; only common variables were retained in a final stepwise model for each of the four school outcomes. The results indicated that, remarkably, substance use accounted for the most variance (i.e., 8.4% -16.1 %) in the four school measures. Further analyses detailed the relationship, including the finding that smoking cigarettes regularly, accounted for the most variance compared to the other five substance use items. Further research and implications of the findings are discussed, including the need for prevention and intervention programs that incorporate substance use as a component, both within and outside of school environments. (PsycINFO Database Record (c) 2011 APA, all rights reserved)     

Low RF noise and power loss for ion-implanted Si having an improved implantation process

Very-low-transmission line noise of <0.25 dB at 18 GHz and low power loss /spl les/0.6 dB at 110 GHz have been measured on transmission lines fabricated on proton-implanted Si. In contrast, a standard Si substrate gave much higher noise of 2.5 dB and worse power loss of 5 dB. The good RF integrity of proton-implanted Si results from the high isolation impedance to ground, as analyzed by an equivalent circuit model. The proton implantation is also done after forming the transmission lines at a reduced implantation energy of /spl sim/4 MeV. This enables easier process integration into current VLSI technology.