Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.     

Error bounds for finite step approximations for solving infinite horizon controlled Markov set-chains

This note considers finite-step approximations for solving an infinite-horizon controlled Markov set-chain problem with finite state and action spaces. We develop a value-iteration type algorithm based on the optimality equation developed by Kurano et al. and analyze an error bound relative to the optimal value that satisfies the optimality equation from the successive approximation. We further analyze an error bound of the approximate control policy defined from a finite-step approximate value by applying the value-iteration type algorithm.     

Thermal and mechanical properties of EPR and XLPE cable compounds

This paper shows that the mechanical and thermal properties of EPR cable dielectrics are very stable with temperature. Commercially available EPR and TRXLPE cable dielectrics typically have about the same thermal conductivity, although the thermal conductivity of TRXLPE above the melting point of the crystallites drops below that of the EPR dielectrics. The mechanical properties of EPR cable dielectrics are much more stable with temperature than those of the TRXLPE, as EPR polymer is essentially amorphous so that EPR cable dielectrics do not suffer from the very large thermal expansion of TRXLPE as its crystallites melt.     

A 12-36GHz PHEMT MMIC balanced frequency tripler

A novel configuration of balanced frequency InGaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) tripler is proposed. A resonant LC filter is used to eliminate the fundamental frequency and a phase delay line is employed to suppress the second harmonic. The separation of the independent phase shifters makes the tripler more compact and flexible. The conversion loss of the tripler operating from 12 to 36GHz is less than 9.4dB at 9-dBm input power. As compared to the third-harmonic frequency, the fundamental frequency is suppressed more than 21.4dB while for the second harmonic is more than 22.3dB at 36GHz.     

双辊薄带钢连铸在线自动检测系统

介绍了双辊薄带钢连铸工艺,设计了双辊连铸机的计算机在线自动检测系统,通过采取正确的抗干扰措施提高了检测的精度,系统在双辊薄带钢连铸试验中应用效果良好.     

Colloidal silica removal in coagulation processes for wastewater reuse in a high-tech industrial park.

Four experiments of coagulation and flocculation were conducted to investigate the characteristics of colloidal silica removal in a high-tech industrial wastewater treatment plant for reclamation and reuse of the effluent. Experimental results illustrated that poly-aluminium chloride (PACl) showed higher performances on colloidal silica removal than alum. Interestingly, the two coagulants demonstrated the same capacity on silica removal. The specific silica removal capacity was approximately 0.135 mg SiO2/mg Al2O3 when the dosage of coagulants was in the range 30-150 mg/L Al2O3. In addition, the silica was reduced significantly at the condition of pH above 8. Experimental data implied that precipitation of aluminium flocs was the major mechanism for colloid silica removal in PACl and alum coagulation, besides, charge adsorption was also important for improving removal efficiency. Moreover, the addition of polyacrylic acid (PAA) as a flocculant could slightly advance silica removal in the PACl coagulation. The combined PACl/PAA/flocs coagulation was effective for the removal of colloidal silica, soluble COD, and turbidity and also suitable as a pretreatment unit in wastewater reclamation and reuse processes.     

QRS feature extraction using linear prediction

This communication proposes a method called linear prediction (a high performant technique in digital speech processing) for analyzing digital ECG signals. There are several significant properties indicating that ECG signals have an important feature in the residual error signal obtained after processing by Durbin's linear prediction algorithm. This communication also indicates that the prediction order need not be more than two for fast arrhythmia detection. The ECG signal classification puts an emphasis on the residual error signal. For each ECG's QRS complex, the feature for recognition is obtained from a nonlinear transformation which transforms every residual error signal to a set of three states pulse-code train relative to the original ECG signal. The pulse-code train has the advantage of easy implementation in digital hardware circuits to achieve automated ECG diagnosis. The algorithm performs very well in feature extraction in arrhythmia detection. Using this method, our studies indicate that the PVC (premature ventricular contraction) detection has at least a 92 percent sensitivity for MIT/BIH arrhythmia database.     

Architectural Control of Hierarchical Nanobelt Superstructures in Catanionic Reverse Micelles

BaXO₄ (X = Mo, W) nanobelts and a variety of hierarchical superstructures assembled from the nanobelts have been synthesized in a catanionic reverse‐micelle system. The effects of various factors, such as the mixing ratio (r) between the anionic and cationic surfactants, the temperature, and the presence of polymeric additives, on the formation of the nanobelts and their hierarchical assembly have been examined in detail. In particular, r has been shown to be powerful in modulating the formation and assembly of the BaMoO₄ and BaWO₄ nanobelts. Architectural control of the penniform nanobelt superstructures has been readily achieved by changing the experimental parameters. A plausible two‐stage growth mechanism has been proposed for the formation of penniform BaXO₄ nanobelt superstructures in catanionic reverse micelles.     

Novel one-step route for synthesizing sub-micrometer PSt hollow spheres via redox interfacial-initiated method in inversed emulsion

Interfacial-initiated polymerization of styrene (St) was carried out in inversed emulsion with cumene hydroperoxide (CHPO) and ferrous sulfate (FeSO₄)/disodium ethylenediaminetetraacetate (NaEDTA)/sodium formaldehyde sulfoxylate (SFS) as the redox initiation system. The water-soluble Fe²⁺-NaEDTA-SFS acted as the reducing component and the oil-soluble CHPO as the oxidant component of the redox initiation system. Therefore, the primary radicals were produced mainly at the oil/water interface to initiate the polymerization of St. Thus, sub-micrometer hollow polystyrene (PSt) spheres were obtained by one-stage polymerization, which was supported by the techniques of transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM).     

N-Type Field-Effect Transistors Using Multiple Mg-Doped ZnO Nanorods

Nanorod field-effect transistors (FETs) that use multiple Mg-doped ZnO nanorods and a SiO₂ gate insulator were fabricated and characterized. The use of multiple nanorods provides higher on-currents without significant degradation in threshold voltage shift and subthreshold slopes. It has been observed that the on-currents of the multiple ZnO nanorod FETs increase approximately linearly with the number of nanorods, with on-currents of ~1 muA per nanorod and little change in off-current (~4times10^-12). The subthreshold slopes and on-off ratios typically improve as the number of nanorods within the device channel is increased, reflecting good uniformity of properties from nanorod to nanorod. It is expected that Mg dopants contribute to high n-type semiconductor characteristics during ZnO nanorod growth. For comparison, nonintentionally doped ZnO nanorod FETs are fabricated, and show low conductivity to compare with Mg-doped ZnO nanorods. In addition, temperature-dependent current-voltage characteristics of single ZnO nanorod FETs indicate that the activation energy of the drain current is very low (0.05-0.16 eV) at gate voltages both above and below threshold