Comparison of conductometric humidity-sensing polymers

Films of differently modified PVA (polyvinyl alcohol), TA (phthalocyaninosilicon) and Nafion in different ionic forms (H⁺, Li⁺, and Na⁺) have been prepared by using casting methods. Impedance changes of the films with relative humidity are examined. The results demonstrate that the content and hydrophilicity of the hydrophilic group in PVA, ionization of TA, and the cation in Nafion have significant effects on sensing properties of the films.     

A 6.94-in. WVGA poly-Si TFT-LCD with integrated driver including sequential analog sampling circuits

By the integrated drive circuitry with laser crystallization process, the gate and data driver circuits required for full color WVGA(800 × RGB × 480) LCD are integrated on panel. The integrated driver comprises a sequential analog sampling data driver and a dual logic gate scanner for redundancy. The characteristics and uniformities of the LTPS (low temperature polycrystalline silicon) devices have been remarkably enhanced by applying stacked SiO₂ and SiN_x buffer layers and surface treatment.     

如何搞好建设工程项目施工成本管理

1施工成本管理的任务施工成本管理就是要在保证工期和质量满足要求的情况下,利用有关措施把成本控制在计划范围内,并进一步寻求最大程度的成本节约。施工成本管理的任务主要包括:1.1施工成本预测施工成本预测就是根据成本信息和施工项目的具体情况,运用一定的专门方法,对未来的成本水平及其可能发展趋势作出科学的估计,其实质就是在施工以前对成本进行估算。通过成本预测,可以使项目经理部在满足业主和施工企业要求的前提下,选择成本低、效益好的最佳成本方案,并能够在施工项目成本形成过程中,针对薄弱环节,加强成本控制,克服盲目性,提高预…     

Surface treatment effect on the poly-Si TFTs fabricated by electric field enhanced crystallization of Ni/a-Si:H films

Self-aligned, p-channel polycrystalline silicon thin-film transistors (TFTs) were fabricated by electric field enhanced crystallization of a-Si:H in contact with the Ni catalyst, where a chemical solution of 97.5% H/sub 2/O:1% HF:1.5% H/sub 2/O/sub 2/ was used for a surface treatment on polycrystalline silicon films. The wet surface treatment was found to remarkably improve the electrical properties of TFTs, especially the leakage current and subthreshold slope. The enhanced performance was confirmed to be from the removal of the Ni impurity remaining as defect states at the surface and also from the ameliorated surface roughness of the polycrystalline silicon films.     

Amorphous-silicon distributed-threshold voltage transistors withself-aligned poly-silicon sources and drains

A microstructure has been introduced into the channel of amorphous-silicon thin-film transistors with poly-silicon sources and drains. A slant-photolithography method was introduced for fabricating this device without additional photomasks. The off-characteristics have been improved without sacrificing originally good on-characteristics. Temperature dependence is also discussed for the transistor characteristics