基于Pro/E及VB的注射模设计动态演示系统

分析了基于Pro／E Wildfire的注射模设计的基本流程,构建了动态演示系统的功能模型,并以VB6．0为主要开发工具开发了动态演示系统。     

斜巷轨道运输伤害事故的原因分析与防范措施

对煤矿倾斜井巷轨道运输较为多发的伤害事故发生的原因进行了归纳和分析,在此基础上提出了综合性的防范措施。     

He Ⅱ常流体粘度实验测量技术研究进展

目前还没有现成的理论可以对He Ⅱ粘度进行合理的说明和计算,在大多数情况下还只能依靠实验技术来满足其工程需要.本文对传统实验技术,目前出现的各种改进型实验技术进行了概述,事实表明不同的实验技术所得的结果之间偶有符合,但不能从根本上解决He Ⅱ粘度对实验技术的依赖性,目前的实验技术还无法提供He Ⅱ粘度数值的一致性结论.但是通过对He Ⅱ粘度与温度之间的变化趋势、数值的数量级等方面的分析,证明了He Ⅱ粘度在1.6 K～1.8 K之间形成了最小值区域.当温度继续低于1.6 K时,He Ⅱ粘度会迅速增加,同样在温度高于1.8 K时,随着温度的增加,He Ⅱ粘度也会迅速增加.     

有机硅膜分离润滑油中脱蜡溶剂的机理研究

利用气相色谱法,在348．15～368．15K温度,测定了正己烷、正庚烷、正癸烷、甲苯和丁酮溶剂在有机硅膜中的无限稀释扩散系数,结合Vrentas-Duda自由体积模型计算得到溶剂／有机硅膜体系溶剂有限浓度扩散系数,在理论上预测了不同溶剂在有机硅膜中扩散特性对膜分离性能的影响,在实验和理论两个方面,为进一步研究有机硅膜分离机理打下了基础．     

Fabrication of Cu(In,Ga)Se2 thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures

Cu(In, Ga)Se₂ (CIGS) thin films were fabricated by ion beam sputtering deposition from a single quaternary target at different substrate temperatures (T _sub). The thin films were characterized with X-ray diffractometry, scanning electron microscopy, energy-dispersive X-ray spectroscopy and four-point probe technique to study the microstructures, surface morphology, composition and electrical properties, respectively. The results show that the films grown above 400?°C are of chalcopyrite structure. Cu(In_0.7Ga_0.3)Se₂ thin film was obtained when T _sub is 550?°C. The Cu and Se atomic percentage when T _sub is above 500?°C is higher than when T _sub is below 500?°C. With the increase in T _sub, the surfaces morphology of the films is denser and the resistivity of the films decreases.     

硅离子注入引入纳米晶对SIMOX材料进行总剂量辐射加固

本研究工作采用硅离子注入和高温退火工艺对SIMOX材料的BOX层进行总剂量辐射加固.辐射实验结果证明了该加固方法的有效性.PL谱和HRTEM图像显示了硅离子注入及退火工艺在材料的BOX层中引入了Si纳米晶,形成电子陷阱能级,有效俘获电子,从而提高了材料BOX层的抗总剂量辐射能力.     

利用二维PSD器件测量小角度的研究一种新型的自准直仪

文章中对二维PSD用于二维小角度测量的研制的原理方法和试验结果作了介绍,同时对二维PSD自准直仪的性能特点也有较详细的分析论述,也为小角度测量仪器的开发提出了一种崭新的方法.     

Analysis of the drude model in metallic films

A method, believed to be new, to simulate Drude parameters for collective oscillation of the free carriers in metallic films is proposed. Plasma resonance frequency and relaxation were simulated simultaneously from both the real and the imaginary parts of the dielectric function of a metallic film after consideration of their correlation in the Drude model. As examples, the contributions of the electrons in Ag films and of the free carriers in metallic silicide, NbSi(2) and TaSi(2), films have been studied.