应用时频分析方法辨识时变系统的模态参数

应用Gabor展开及Hilbert变换进行时变线性系统模态参数的辨识。利用非平稳信号的Gabor变换将结构响应信号表示在时频面上，并通过Gabor展开重构分离模态分量，建立每一阶模态的时变线性模型。对单模态时变线性模型应用Hilbert变换来辨识随时间变化的模态频率和阻尼。通过对刚度和阻尼慢变的两自由度系统模态参数的仿真辨识验证辨识方法的有效性。仿真结果表明：本文方法为时变线性系统的模态参数辨识提供了一条新的途径。     

Evaluation of the Properties of Si3N4/Si3N4 Joint Brazed Using a Filler Alloy Containing Pd

Si3N4 ceramic was jointed to itself using a filler alloy of Cu76.5Pd8.5Ti15, and the mechanical properties of the jointwere measured and analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15, the SisN4/SisN4 joints were obtained bybrazing at 1373～1473 K f     

X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling

A model is formulated that describes how radiation-induced charge accumulates in the gate oxide of a MOS structure and how it decays through tunneling and thermal emission. The model is used in a numerical analysis of the x-ray or UV adjustment of threshold voltage in MOS-circuit manufacture. The limits of this process technique are evaluated.     

关于构建中国移动天地一体应急通信平台的探讨

为确保特殊时期党政军指挥通信畅通，充分利用中国移动现网资源，将卫星通信与地面光缆、微波传榆。以及移动网络无缝衔接，共同构建中国移动天地一体应急通信平台。     

TD-SCDMA直放站对网络性能的影响

TD-SCDMA直放站是用于TD-SCDMA移动通信网的全双工、线性射频放大设备．介绍了TD直放站不同于其它系统的同步的时分双工模式特点，并讨论了TD-SCDMA直放站的引入可能对网络性能造成的影响及其解决方法。     

基于素性检验思想的不可约多项式判断

论文将Fermat素性检验的思想运用于不可约多项式的判断,给出了一个对于不可约判断问题的Monte Carlo 算法,分析了该算法的计算复杂度问题,并且给出了次数在200以内的检验结果。     

Second harmonic generation from a ferroelectric film

We derive an expression for transmittivity (T_SHG) of second harmonic generation (SHG) signals from a ferroelectric (FE) film. Intensities of up and down fields in the medium are investigated in relation to T_SHG. The derivations are made based on undepletion of input fields and nonlinear wave equation derived from the Maxwell equations. We present two cases: film without mirrors and with partial mirrors. Expressions for the newly derived nonlinear susceptibility coefficients of SHG for real crystal symmetry [J. Opt. Soc. Am. B 19 (2002) 2007] are used to get more realistic results. Variations in T_SHG with respect to film thickness are illustrated.     

Synthesis of Rice Processing Plants. I. Development of Simplified Models

This article, the first of three articles on the synthesis of rice processing plants, focuses on the development of simplified mathematical models necessary for use in optimizing rice processing plants. The second concentrates on the optimal synthesis of a rice plant and the third on the sensitivity of the optimization to uncertainty in model parameters. Existing models for rice processing unit operations are not suitable for flowsheet optimization and new models need to be developed to overcome numerical difficulties that occur in optimization applications, specifically in mixed integer nonlinear programming (MINLP) applications. Simplified models of the drying, cooling, and tempering units are developed. In addition head rice yield models, used as a quality indicator, energy consumption, and economic models were also developed. Naturally, the new models exhibit some mismatch with respect to the existing models from which they were developed. However, a sensitivity analysis, presented in Part III, has shown that the optimal flowsheet structure was not sensitive to a lack of fit between the simplified and complex models. The simplified models were found adequate to be appropriate for use at the synthesis stage.     

1/f noise in large-area Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiodes

The 1/f noise in photovoltaic (PV) molecular-beam epitaxy (MBE)-grown Hg_1−xCd_xTe double-layer planar heterostructure (DLPH) large-area detectors is a critical noise component with the potential to limit sensitivity of the cross-track infrared sounder (CrIS) instrument. Therefore, an understanding of the origins and mechanisms of noise currents in these PV detectors is of great importance. Excess low-frequency noise has been measured on a number of 1000-μm-diameter active-area detectors of varying “quality” (i.e., having a wide range of I-V characteristics at 78 K). The 1/f noise was measured as a function of cut-off wavelength under illuminated conditions. For short-wave infrared (SWIR) detectors at 98 K, minimal 1/f noise was measured when the total current was dominated by diffusion with white noise spectral density in the mid-10⁻¹⁵A/Hz^1/2 range. For SWIR detectors dominated by other than diffusion current, the ratio, α, of the noise current in unit bandwidth i_n(f = 1 Hz, V_d = −60 mV, and Δf = 1 Hz) to dark current I_d(V_d = −60 mV) was α_SW-d = i_n/I_d ∼ 1 × 10⁻³. The SWIR detectors measured at 0 mV under illuminated conditions had median α_SW-P = i_n/I_ph ∼ 7 × 10⁻⁶. For mid-wave infrared (MWIR) detectors, α_MW-d = i_n/I_d ∼ 2 × 10⁻⁴, due to tunneling current contributions to the 1/f noise. Measurements on forty-nine 1000-μm-diameter MWIR detectors under illuminated conditions at 98 K and −60 mV bias resulted in α_MW-P = i_n/I_ph = 4.16 ± 1.69 × 10⁻⁶. A significant point to note is that the photo-induced noise spectra are nearly identical at 0 mV and 100 mV reverse bias, with a noise-current-to-photocurrent ratio, α_MW-P, in the mid 10⁻⁶ range. For long-wave infrared (LWIR) detectors measured at 78 K, the ratio, α_LW-d = i_n/I_d ∼ 6 × 10⁻⁶, for the best performers. The majority of the LWIR detectors exhibited α_LW-d on the order of 2 × 10⁻⁵. The photo-induced 1/f noise had α_LW-P = i_n/I_ph ∼ 5 × 10⁻⁶. The value of the noise-current-to-dark-current ratio, α appears to increase with increasing bandgap. It is not clear if this is due to different current mechanisms impacting 1/f noise performance. Measurements on detectors of different bandgaps are needed at temperatures where diffusion current is the dominant current. Excess low-frequency noise measurements made as a function of detector reverse bias indicate 1/f noise may result primarily from the dominant current mechanism at each particular bias. The 1/f noise was not a direct function of the applied bias.     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.