A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

在基于MPLS的层次化移动IP网络中支持DiffServ的研究

MPLS支持DiffServ、流量工程,能为网络提供较好的QoS保证,而移动IP(MIP)能为移动设备提供较好的移动性支持。文章探讨了在无线接入网中MPLS和MIP结合实现DiffServ的方案,并给出了一种在基于MPLS的层次化MIP网络结构中支持DiffServ的体系结构,设计了其节点功能模型和关键协议。方案中利用了层次化结构的区域注册和重路由机制,减少了切换时延和网络的信令负荷。     

Low-temperature poly-SiGe alloy growth of high gain/speed pin infrared photosensor with gold-induced lateral crystallization (Au-ILC)

The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications.     

化学复合镀层激光处理研究

研究了激光处理对Ni-P -SiC化学复合镀层的影响。借助于扫描电镜、能谱仪、X射线衍射、显微硬度计等设备对激光处理后复合镀层的表面形貌、组织结构及性能进行了综合分析。结果表明 ,对复合镀层进行激光处理可以获得与炉内加热同样的镀层硬度 ,且当激光功率 4 0 0W ,扫描速度 1.5m /min时 ,镀层硬度高于炉内加热的硬度     

Characteristics of low-leakage deep-trench diode for ESD protection design in 0.18-/spl mu/m SiGe BiCMOS process

This paper proposes a novel low-leakage BiCMOS deep-trench (DT) diode in a 0.18-/spl mu/m silicon germanium (SiGe) BiCMOS process. By means of the DT and an n/sup +/ buried layer in the SiGe BiCMOS process, a parasitic vertical p-n-p bipolar transistor with an open-base configuration is formed in the BiCMOS DT diode. Based on the two-dimensional (2-D) simulation and measured results, the BiCMOS DT diode indeed has the lowest substrate leakage current as compared to the conventional p/sup +//n-well diode even at high temperature conditions, which mainly results from the existence of the parasitic open-base bipolar transistor. Considering the applications of the diode string in electrostatic discharge (ESD) protection circuit designs, the BiCMOS DT diode string also provides a good ESD performance. Owing to the characteristics of the low leakage current and high ESD robustness, it is very convenient for circuit designers to use the BiCMOS DT diode string in their IC designs.     

单元串联式多电平高压变频器的起源、现状和展望

本文对单元串联式多电平高压变频器的起源和现状进行了总结,同时从无速度传感器矢量控制、大容量化、冗余设计等方面对该技术未来的发展趋势进行了展望。     

对印制电路板环境冲击评估的研究

随着印制电路板产业飞速发展,其引发的环境问题日益受到广泛的关注。然而长期以来如何有效地进行环境冲击评估是业内研究的重点和难点。而本文采用了一种智能的简化分析方法来进行全面的环境冲击评估,以提高评估的经济效益和准确度,并希望能为决策者提供一个可供参考的环境冲击评估的理念和方法。     

运营商内部数据通信网的VPN技术

针对电信运营商在构建内部数据通信网(DCN)时遇到的各应用系统的隔离问题，详细介绍了目前几种主流的虚拟专用网(VPN)技术，并进行分析比较，最后提出了运营商内部数据通信网的VPN解决方案。     

An intelligent web-page classifier with fair feature-subset selection

The explosion of on-line information has given rise to many manually constructed topic hierarchies (such as Yahoo!!). But with the current growth rate in the amount of information, manual classification in topic hierarchies results in an immense information bottleneck. Therefore, developing an automatic classifier is an urgent need. However, classifiers suffer from enormous dimensionality, since the dimensionality is determined by the number of distinct keywords in a document corpus. More seriously, most classifiers are either working slowly or they are constructed subjectively without any learning ability. In this paper, we address these problems with a fair feature-subset selection (FFSS) algorithm and an adaptive fuzzy learning network (AFLN) for classification. The FFSS algorithm is used to reduce the enormous dimensionality. It not only gives fair treatment to each category but also has ability to identify useful features, including both positive and negative features. On the other hand, the AFLN provides extremely fast learning ability to model the uncertain behavior for classification so as to correct the fuzzy matrix automatically. Experimental results show that both FFSS algorithm and the AFLN lead to a significant improvement in document classification, compared to alternative approaches.