CE/SE方法在点火管一维两相流数值计算中的应用

介绍了CE／SE方法。该方法不同于以往的一些计算格式，在计算中它把时间和空间同等对待，具有格式构造简单、计算方便和对激波间断分辨率高等优点。运用适合点火管一维两相流控制方程的CE／SE方法来计算点火管内的一维两相流流动，源项采用四阶Runge-Kutta方法进行处理。数值计算的结果与实验数据的比较表明，CE／SE方法能对两相流进行有效的数值模拟。     

Cloud-Supported Seamless Internet Access in Intelligent Transportation Systems

Great progress of technologies makes intelligent transportation system (ITS) services increasingly desirable. It becomes essential to seamlessly connecting to the Internet for accessing high quality Internet-enabled ITS services. In this context, gateway is recognized as the logical portal to the Internet. The efficiency of gateway regulation hence significantly sways the quality of ITS services. To seamlessly access the Internet in ITSs, a cloud-supported gateway model is proposed in this paper. Accordingly, the weighty load of gateway government, including gateway registration, discovery, selection, dispatching, and handoff, is offloaded from the clients to the appointed cloud servers. Numerical analyses and simulation results suggest that the gateway model proposed in this paper effectively improves the system performance in terms of the packet delivery rate, end-to-end delay, signaling overhead, and gateway connectivity; and, correspondingly enhances the usage experience of Internet-enabled ITS services.     

Stable Radicals with Protective Umbrellas Integrated on the Surface of 2D Layered Materials

Radicals are closely related to human life and health and have been widely used in biology, chemistry, functional materials, etc. However, the high reactivity, disorder, and short half-lives limit their wide applications. Therefore, it remains a great challenge to prepare stable and ordered radicals. Herein, radicals are prepared with protective umbrellas (diethylmethyleneamine, DEMA) that are integrated on the surface of 2D layered materials to isolate water and oxygen and enhance the stability of radicals. Taking 2D black phosphorus (BP) as an example: triethylamine reacts with dichloromethane to form quaternary ammonium salts with further Hoffmann elimination to produce DEMA radicals that could react with one electron of a lone pair electrons in P on the surface of BP to produce P radicals, which shows a prolonged half-life of 21 days at room temperature. First-principle calculations and electron paramagnetic resonance fitting confirm that the steric hindrance constructed by dense DEMA passivation layer acts as a protective umbrella and the 2D coupling of P radicals and other P atoms in 2D BP plane to enhance the stability and strong superexchange interaction of P radicals. Furthermore, it is a general strategy to produce stable radicals integrated on the 2D plane.     

Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells

Ni/In_xGa_1−xN/GaN Schottky barrier solar cells with different In contents (x = 0.07/0.13) and two types of Schottky patterns (semitransparent current spreading layer and grid contact) are fabricated and the dependences of photovoltaic performances of these solar cells on In contents and Schottky patterns are studied. Solar cells with semitransparent contact have almost the same open-circuit voltages (V_oc) as solar cells with grid contact and exhibit a higher fill factor (FF). However, solar cells with grid contact exhibit a higher maximum output power density (P_max) than semitransparent contact due to their larger short-circuit current density (J_sc). On the other hand, V_oc and FF decrease significantly with increasing In content (beyond the decrease expected from the band gap of InGaN). By comparing the X-ray rocking curves, AFM images, dark current characteristics and spectral responsivities, it could be concluded that the deterioration of InGaN crystal quality with increasing In content is the dominant reason accounting for the strong decrease of V_oc and FF. In addition, using AMPS simulation, the band structure and ideal spectral responsivities are obtained. Comparison of the experimental and simulated results also shows that high crystal quality is a key factor to obtain high performance InGaN-based Schottky barrier photovoltaic cells.     

Tailored and Highly Stretchable Sensor Prepared by Crosslinking an Enhanced 3D Printed UV-Curable Sacrificial Mold

Taking advantage of unlimited geometry design, 3D printed sacrificial mold cast with highly conductive polymer composites is used to prepare a sensor with designed structures. However, the disposal of the mold in a mild condition while the refined structures can be maintained is still a challenge. Herein, a bifunctional monomer hydrolyzable hindered urea acrylate is synthesized to create a cross-linked polymer network, preventing the dissolution of printed parts in the uncured resin. 3D printed scaffolds can be hydrolyzed in hot water, which provides an attractive option for sacrificial molds. Also, a porous flexible strain sensor (PFSS) is fabricated by casting polyurethane/carbon nanotubes composites into the sacrificial molds, which demonstrates a high stretchability (≈510%) and an excellent recoverability. Meantime, the pressure sensitivity (0.111 kPa⁻¹) and a long-term electrical resistance of PFSS is characterized. The resistance response signal remains nearly unchanged after 100 compressive loading cycles at a large strain of 60%. Benefiting from the design freedom of 3D printing, a practical application of the PFSS with a complex and customized structure to monitor human motion is demonstrated. These results prove that the sacrificial molding process has great potential for user-specific stretchable wearable devices.     

不同功率氮激光穴位照射镇痛作用研究

作者以不同功率的氮澈光对大白鼠分组进行穴位照射。照射前后测痛，照射后动物痛阈都有提高，说明不同功率的氮激光均有镇痛作用。高、低功率氮澈光穴位照射后动物产生的痛阈变化经统计学处理，差异性不显著。提示使用低功率氮激光同样可达提高痛阈的目的。     

A PUFs-based hardware authentication BLAKE algorithm in 65 nm CMOS

This paper presents a hardware authentication BLAKE algorithm based on physical unclonable functions (PUFs) in Taiwan Semiconductor Manufacturing Company low-power 65 nm CMOS. To support hardware authentication feature, PUFs have been organised in BLAKE algorithm as the salt value. The trials table method is used to improve the robust of PUFs, resulting in approximately 100% stability against supply voltage variations form 0.7 V to 1.6 V. By discussing the G-function of BLAKE algorithm, the hardware implementation is considered for acceleration, resulting in significant performance improvements. The die occupies 2.62 mm² and operates maximum frequency 1.0 GHz at 1.6 V. Measured results show that PUFs have great random characteristic and the authentication chip dissipates an average power of 91 mW under typical condition at 1.2 V and 780 MHz. In comparison with other works, the PUFs-based BLAKE algorithm has hardware authentication feature and improves throughput about 45%.     

民用建筑电气设计抑制谐波的危害、降损节能

民用建筑随着非线性电气设备——计算机实时监控设备广泛应用,变频水泵、调频空调系统推广,电力系统中谐波危害越来越严重,电网的污染带来致命的危害已到急逼之势,净化电源、优化电气设计的可靠性和安全性。     

激光技术在刚挠性HDI板的应用——微导通孔形成，图形成形，外型加工

概述了采用一个激光源能够加工刚性和挠性板的一种新型激光技术,PCB制造商可能采用最小的投资和提高生产率而进入HDI市场。     

Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process

A new charge pump circuit has been proposed to suppress the return-back leakage current without suffering the gate-oxide reliability problem in low-voltage CMOS process. The four-phase clocks were used to control the charge-transfer devices turning on and turning off alternately to suppress the return-back leakage current. A test chip has been implemented in a 65-nm CMOS process to verify the proposed charge pump circuit with four pumping stages. The measured output voltage is around 8.8 V with 1.8-V supply voltage to drive a capacitive output load, which is better than the conventional charge pump circuit with the same pumping stages. By reducing the return-back leakage current and without suffering gate-oxide overstress problem, the new proposed charge pump circuit is suitable for applications in low-voltage CMOS IC products.