高k材料用作纳米级MOS晶体管栅介质薄层(上)

随着45 nm和32 nm技术节点的来临,传统的SiO2作为栅介质薄膜材料的厚度需缩小到1 nm之下,材料的绝缘性、可靠性等受到了极大的挑战,已不能满足技术发展的要求.高k材料成为代替SiO2作为栅介质薄层材料的不错选择,但是大多数高k材料是离子金属氧化物,其基本物理和材料特性导致产生很多不可靠因素.从高k材料的基本物理和材料特性角度,回顾了高k材料代替SiO2用作纳米级MOS晶体管栅介质薄层时产生的主要不可靠因素及根本原因.     

一种适于受限资源环境的远程用户认证方案的分析与改进

该文讨论了Fang等人(2011)新近提出的一个安全高效的基于智能卡的远程用户口令认证方案,指出原方案无法实现所声称的抗离线口令猜测攻击,对平行会话攻击和已知密钥攻击是脆弱的,并且存在用户口令更新友好性差问题。给出一个改进方案,对其进行了安全性和效率分析。分析结果表明,改进方案弥补了原方案的安全缺陷,保持了较高的效率,适用于安全需求较高的资源受限应用环境。     

Multistage interference cancellation with diversity reception forasynchronous QPSK DS/CDMA systems over multipath fading channels

This paper introduces a multistage interference cancellation (MIC) technique with diversity reception for quadrature phase shift keying (QPSK) asynchronous direct-sequence code division multiple access (DS/CDMA) systems over frequency-selective multipath Rayleigh fading channels. Unlike the previous MIC, which tries to remove the lump sum of the multiple-access interference (MAI) and self-interference (SI), this introduced MIC attempts to cancel only the MAI and part of the SI due to the intersymbol interference, while treating the remaining SI created by the current symbol as useful information for symbol decision. In this technique, the RAKE combining is used to collect signal replicas over multiple fading paths. Upper and lower bounds on the bit error probability are derived using a Gaussian approximation and the characteristic function method. Furthermore, effects of channel estimation error on the performance are studied. Analytical and simulation results show that the introduced MIC can provide a performance extremely close to that in an ideal single-user environment and outperforms the previous MIC even in the presence of channel estimation error     

民用建筑电气设计抑制谐波的危害、降损节能

民用建筑随着非线性电气设备——计算机实时监控设备广泛应用,变频水泵、调频空调系统推广,电力系统中谐波危害越来越严重,电网的污染带来致命的危害已到急逼之势,净化电源、优化电气设计的可靠性和安全性。     

Novel Low-Complexity Partial Transmit Sequences Scheme for PAPR Reduction in OFDM Systems Using Adaptive Differential Evolution Algorithm

A low-complexity partial transmit sequence (PTS) technique for reducing the peak-to-average power ratio (PAPR) of an orthogonal frequency division multiplexing signal is presented. However, the conventional PTS scheme requires an exhaustive searching over all combinations of allowed phase factors. Consequently, the computational complexity increases exponentially with the number of the subblocks. This paper presents a novel approach to the PAPR problem to reduce computational complexity based on the relationship between phase weighing factors and transmitted bit vectors. In this paper, we aim to obtain the desirable PAPR reduction with the low computational complexity. Since the process of searching the optimal phase factors can be categorized as combinatorial optimization with some variables and constraints, we propose a novel scheme, which is based on a stochastic optimization technique called modified differential evolution, to search the optimal combination of phase factors with low complexity. To validate the analytical results, extensive simulations have been conducted, showing that the proposed schemes can achieve significant reduction in computational complexity while keeping good PAPR reduction.     

Dramatic Tuning of the Topological Hall Effect in AxRhO2 (A = K,Rb, and Cs) Crystals by Electron Concentration or Cation

Topological Hall effect, being an unconventional anomalous Hall effect, is originated from the real-space Berry curvature caused by the nontrivial topological spin textures in materials. Manipulations of nontrivial magnetic structure and related topological Hall effect are very important for the study of the chiral magnet. Herein, it is experimentally observed that the significant topological Hall conductivity σ_xy in antiferromagnetic K_0.5RhO₂ can reach 3.5% of ν = 1 quantum conductivity below 20 K. Furthermore, by adjusting the concentration of K-cation different from 0.5 in K_xRhO₂ or substituting the K cations by Rb or Cs to form Rb_0.5RhO₂ or Cs_0.5RhO₂, it is observed that the topological Hall effect is much weakened or even disappeared. This evolution, verified by the theoretical calculations, is attributed to the unstable ground state of the non-coplanar spin structure in K_xRhO₂ (x = 0.4 and 0.6) and Cs_0.5RhO₂. The significantly tunable topological Hall effect in A_xRhO₂ makes it prospective on logical/sensor devices of spintronics.     

LED节能灯的安规要求

根据CTL发布的DSH 0743决议,归纳了LED节能灯测试标准中的要求,主要包含对灯头、防触电、灯头温升、绝缘材料、异常状态、结构的考核,以及灯的光生物学安全考核。     

A 0D Lead‐Free Hybrid Crystal with Ultralow Thermal Conductivity

Organic–inorganic hybrid materials are of significant interest owing to their diverse applications ranging from photovoltaics and electronics to catalysis. Control over the organic and inorganic components offers flexibility through tuning their chemical and physical properties. Herein, it is reported that a new organic–inorganic hybrid, [Mn(C₂H₆OS)₆]I₄, with linear tetraiodide anions exhibit an ultralow thermal conductivity of 0.15 ± 0.01 W m^?1 K^?1 at room temperature, which is among the lowest values reported for organic–inorganic hybrid materials. Interestingly, the hybrid compound has a unique 0D structure, which extends into 3D supramolecular frameworks through nonclassical hydrogen bonding. Phonon band structure calculations reveal that low group velocities and localization of vibrational energy underlie the observed ultralow thermal conductivity, which could serve as a general principle to design novel thermal management materials.     

全光纤电流互感器λ/4波片制作工艺

根据全光纤电流互感器（FOCT）的光路结构及其工作原理,分析了/4波片的制作效果对FOCT的影响,研究了/4波片的制作工艺,得出了影响波片制作效果的主要因素。通过选择合适的材料和工艺方法,获得了性能优异的全光纤/4波片。试验结果表明:该方法制作的波片提高了FOCT的性能,使其满足了0.2 S级测量用电子式电流互感器的准确度要求。     

Orthorhombic Ti2O3: A Polymorph‐Dependent Narrow‐Bandgap Ferromagnetic Oxide

Magnetic semiconductors are highly sought in spintronics, which allow not only the control of charge carriers like in traditional electronics, but also the control of spin states. However, almost all known magnetic semiconductors are featured with bandgaps larger than 1 eV, which limits their applications in long‐wavelength regimes. In this work, the discovery of orthorhombic‐structured Ti₂O₃ films is reported as a unique narrow‐bandgap (≈0.1 eV) ferromagnetic oxide semiconductor. In contrast, the well‐known corundum‐structured Ti₂O₃ polymorph has an antiferromagnetic ground state. This comprehensive study on epitaxial Ti₂O₃ thin films reveals strong correlations between structure, electrical, and magnetic properties. The new orthorhombic Ti₂O₃ polymorph is found to be n‐type with a very high electron concentration, while the bulk‐type trigonal‐structured Ti₂O₃ is p‐type. More interestingly, in contrast to the antiferromagnetic ground state of trigonal bulk Ti₂O₃, unexpected ferromagnetism with a transition temperature well above room temperature is observed in the orthorhombic Ti₂O₃, which is confirmed by X‐ray magnetic circular dichroism measurements. Using first‐principles calculations, the ferromagnetism is attributed to a particular type of oxygen vacancies in the orthorhombic Ti₂O₃. The room‐temperature ferromagnetism observed in orthorhombic‐structured Ti₂O₃, demonstrates a new route toward controlling magnetism in epitaxial oxide films through selective stabilization of polymorph phases.