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51.
Proton-exchanged planar waveguides were demonstrated in Z-cut LiNBO/sub 3/ using toluic acid as a new organic proton source. These waveguides exhibit a propagation loss of around 1 dB/cm, and a step refractive index profile with an index increase of 0.124 measured at 0.663 mu m. The diffusion rate was found to be lower than those obtained using the popular benzoic and phosphoric acids.<> 相似文献
52.
StructureandMagneticPropertiesofLaCo_(13-X)M_XIntermetallicCompoundsWUJianMin;LIFeng;TAILiChiandZHEMGQunStructureandMagneticP... 相似文献
53.
短毫米波和亚毫米波接收机的发展现状 总被引:1,自引:0,他引:1
本文概述了短毫米和亚毫米波接收机的发展现状,介绍了接收机的重要组成部件:混频器、振荡器和放大器的发展水平以及毫米波单片集成电路的现状,给出了接收机的最新性能指标。 相似文献
54.
Shye Lin Wu Chung Len Lee Tan Fu Lei Chen C.F. Chen L.J. Ho K.Z. Ling Y.C. 《Electron Device Letters, IEEE》1994,15(4):120-122
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device 相似文献
55.
Zheng Ming College of Biology Environment Engineering Jiangsu University Zhenjiang ChinaChen Chi Shanghai University 《机械工程学报(英文版)》2002,15(4):328-333
From basic equations of gas-liquid, solid-liquid, solid-gas two-phase flow, the calculating method on flow transients of two-phase flow is developed by means of characteristic method. As one example, a gas-liquid flow transient is calculated and it agrees well with the experimental result. It is shown that the method is satisfactory for engineering demand. 相似文献
56.
57.
Tahui Wang Chimoon Huang Chou P.C. Chung S.S.-S. Tse-En Chang 《Electron Devices, IEEE Transactions on》1994,41(9):1618-1622
A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at Vg ≃0.5 Vd in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states 相似文献
58.
Measurement and modeling of self-heating in SOI nMOSFET's 总被引:4,自引:0,他引:4
Su L.T. Chung J.E. Antoniadis D.A. Goodson K.E. Flik M.I. 《Electron Devices, IEEE Transactions on》1994,41(1):69-75
Self-heating in SOI nMOSFET's is measured and modeled. Temperature rises in excess of 100 K are observed for SOI devices under static operating conditions. The measured temperature rise agrees well with the predictions of an analytical model and is a function of the silicon thickness, buried oxide thickness, and channel-metal contact separation. Under dynamic circuit conditions, the channel temperatures are much lower than predicted from the static power dissipation. This work provides the foundation for the extraction of device modeling parameters for dynamic operation (at constant temperature) from static device characterization data (where temperature varies widely). Self-heating does not greatly reduce the electromigration reliability of SOI circuits, but might influence SOI device design, e.g., requiring a thinner buried oxide layer for particular applications and scaled geometries 相似文献
59.
Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron
spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace
and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the
Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10−6 Ω-cm2 for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed
at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρc increasing to 2.94 × 10−6Ω-cm2 and for an aging at 410°C for 40 h with its ρc increasing to 1.38 × 10−5 Ω-cm2. 相似文献
60.
Resilient metal spring silicone-matrix conducting composites for separable interconnections in electronics were fabricated
by the impregnation of silicone into a preform comprising randomly oriented C-shaped Cu-Be springs and a small proportion
of Sn-Pb solder, which served to connect the springs at some of their intersections. Composites containing 6.1-9.8 vol.% total
filler exhibited volume electrical resistivity 0.5-1.0 mΩ.cm and contact resistivity (with copper) 11-17 mΩ.cm2. A compressive stress of about 30 kPa was needed for the low contact resistivity to be reached. The volume 17-26% and the
contact resistivity increased by 5% after heating in air at 130-150°C for seven days. Composites containing <9 vol.% total
filler showed no stress relaxation for seven days at 6.0% strain. 相似文献