Long-wavelength 640×486 GaAs-AlGaAs quantum well infraredphotodetector snap-shot camera

A 9-μm cutoff 640×486 snap-shot quantum well infrared photodetector (QWIP) camera has been demonstrated. The performance of this QWIP camera is reported including indoor and outdoor imaging. The noise equivalent differential temperature (NEΔT) of 36 mK has been achieved at 300 K background with f/2 optics. This is in good agreement with expected focal plane array sensitivity due to the practical limitations on charge handling capacity of the multiplexer, read noise, bias voltage, and operating temperature     

LaCrMnNiO系热敏陶瓷的微观结构控制

通过对不同配方、工艺下的ＬａＣｒＭｎＮｉＯ系热敏陶瓷的微观结构研究，指出材料的相组成对其宏观电性能的影响，并提出了通过复合工艺利用“过渡相”的形成，对材料的“最终相”加以控制的方法。文中列出了使用ＸＲＤ及ＸＰＳ手段对材料微观结构的分析结果及有关电性能的测试数据。     

Inhibition of G1 cyclin-dependent kinase activity during growth arrest of human breast carcinoma cells by prostaglandin A2

Prostaglandin A2 (PGA2) potently inhibits cell proliferation and suppresses tumor growth in vivo, but little is known regarding the molecular mechanisms mediating these effects. Here we demonstrate that treatment of breast carcinoma MCF-7 cells with PGA2 leads to G1 arrest associated with a dramatic decrease in the levels of cyclin D1 and cyclin-dependent kinase 4 (cdk4) and accompanied by an increase in the expression of p21. We further show that these effects occur independent of cellular p53 status. The decline in cyclin D and cdk4 protein levels is correlated with loss in cdk4 kinase activity, cdk2 activity is also significantly inhibited in PGA2-treated cells, an effect closely associated with the upregulation of p21. Immunoprecipitation experiments verified that p21 was indeed complexed with cdk2 in PGA2-treated cells. Additional experiments with synchronized MCF-7 cultures stimulated with serum revealed that treatment with PGA2 prevents the progression of cells from G1 to S. Accordingly, the kinase activity associated with cdk4, cyclin E, and cdk2 immunocomplexes, which normally increases following serum addition, was unchanged in PGA2-treated cells. Furthermore, the retinoblastoma protein (Rb), a substrate of cdk4 and cdk2 whose phosphorylation is necessary for cell cycle progression, remains underphosphorylated in PGA2-treated serum-stimulated cells. These findings indicate that PGA2 exerts its growth-inhibitory effects through modulation of the expression and/or activity of several key G1 regulatory proteins. Our results highlight the chemotherapeutic potential of PGA2, particularly for suppressing growth of tumors lacking p53 function.     

β—BBO晶体的电光性能

用干涉法测量了β－ＢＢＯ晶体的电光系数：γ２２＝２．６，γ３３＝０．２３，γ３１＝０．２５，γ５１＝－３．５×１０－１２ｍ／Ｖ。结果表明如果在Ｙ方向加电场，Ｚ方向通光，β—ＢＢＯ晶体可能制作成有应用价值的光开关。     

钛酸铅系薄膜的热释电性能及其应用

叙述了钛酸铅系薄膜的热释电原理，介绍了国际上近几年钛酸铅系薄膜材料、制备工艺及热释电性能，并与块状陶瓷材料进行了比较，分析表明钛酸铅系薄膜具有优良的热释电性能及可观的应用前景。     

高温超导研究的新进展

本文简要回顾了一年来高温超导的新进展，特别介绍和讨论了新型高温超导体系和线材、带材、块材及薄膜应用的发展情况。     

The mechanics of compressive kinking in unidirectional fiber reinforced ductile matrix composites

Three distinct stages of kink band formation and propagation exist in ductile matrix composites subjected to compressive loading. These stages are called incipient kinking, transient kinking and kink band broadening. Each stage involves a different deformation mode. The mechanics governing each stage are discussed. Incipient kinking, where the peak load is attained, and kink band broadening, where the load attains a steady-state, are important in structural design. Two design philosophies are presented. References to pertinent literature are made throughout.     

Si_（1－x）Ge_x／Si定向耦合器的研制

在运用ＳｉＧｅ脊形波导单模条件和有效折射率法分析ＳｉＧｅ／Ｓｉ定向耦合器结构参数的基础上，采用分子束外延和各向异性腐蚀技术制备出Ｓｉ１－ｘＧｅｘ／Ｓｉ（ｘ＝０．０５）单模定向耦合器．在波长为１．３μｍ时，平均串音小于－１８．１ｄＢ，输出功率耦合效率达到９８．１％     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

红外加热胶接技术

提出了红外加热胶接的思想，并对红外加热胶接技术作了简单阐述。介绍了一种红外加热胶接矿用阻燃、防腐、橡塑风筒布的装置。