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31.
Theoretical studies point to significant improvements in the performance of semiconductor laser amplifiers by injecting carriers with pulsed electric currents of sub-nanosecond duration. A pulsed Fabry-Perot amplifier (FPA) is most sensitive to input lightwave at the instant the carrier density is crossing the critical region, and gives a sharply pulsed sampling effect on the input lightwave signal. Compared with a FPA operating at subcritical electron density, the pulsed amplifier gives much higher gain, peak power, and bandwidth. In fact, pulsed operation of a FPA is also expected to give significantly higher gain and about the same peak output power as a traveling wave amplifier. Pulsed operation also improves the performance of a traveling wave amplifier by attenuating its internally reflected waves 相似文献
32.
Teaching-Material Design Center: An ontology-based system for customizing reusable e-materials 总被引:2,自引:1,他引:1
Use of electronic teaching materials (e-material) to support teaching is a trend. e-Material design is therefore an important issue. Currently, most e-material providers offer a package of solutions for different purposes. However, not all teachers and learners need everything from a single package. A preferable alternative is to find useful material from different packages and combine them for a particular course. Currently, most educators collect the material manually, which is time-consuming and may result in missed material. In this paper, we describe a system – the Teaching-Material Design Center, which follows the standard of Sharable Content Object Reference Model – to separate e-material for use as teaching templates and learning objects and to label the material with use of semantic metadata for searching. This system can find existing teaching templates and learning objects for e-material designers and provide a convenient environment for constructing customized e-material for different requirements. We describe the implementation and evaluation of the proposed system for a course. Our system is efficient in finding teaching templates and learning objects and shortening the e-material development process. 相似文献
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Shu-Chu Ren Nelson N. Hsu Donald G. Eitzen 《Journal of research of the National Institute of Standards and Technology》2002,107(5):445-473
Pulsed ultrasonic techniques can be and have been used to examine the interface conditions of a bonded structure. To provide a theoretical basis for such testing techniques we model the structure as a layer on top of a half-space, both of different elastic properties, with various interface bonding conditions. The exact dynamic Green’s tensor for such a structure is explicitly derived from the three-dimensional equations of motion. The final solution is a series. Each term of the series corresponds to a successive arrival of a “generalized ray” and each is a definite line integral along a fixed path which can be easily computed numerically. Willis’ method is used in the derivation. A new scheme of automatic generation of the arrivals and ray paths using combinatorial analysis, along with the summation of the corresponding products of reflection coefficients is presented. A FORTRAN code is developed for computation of the Green’s tensor when both the source and the detector are located on the top surface. The Green’s tensor is then used to simulate displacements due to pulsed ultrasonic point sources of known time waveform. Results show that the interface bonding conditions have a great influence on the transient displacements. For example, when the interface bonding conditions vary, some of the first few head waves and regular reflected rays change polarities and amplitudes. This phenomenon can be used to infer the quality of the interface bond of materials in ultrasonic nondestructive evaluation. In addition the results are useful in the study of acoustic microscopy probes, coatings, and geo-exploration. 相似文献
35.
K-L Lin C-J Hsu I-M Hsu J-T Chang 《Journal of Materials Engineering and Performance》1992,1(3):359-361
It has been difficult to electrolytically obtain crack- free chromium plating because of the high stresses caused by several
factors. Accordingly, electroplating of nickel- chromium also encounters a similar problem. Cracks in chromium- containing
plating was ascribed, in a certain sense, to the formation of a hydride formed through hydrogen adsorption from the electrolyte.
A periodical pulse reverse plating current would enhance the release of hydrogen and hence the elimination of cracking. The
present work describes a successful process for obtaining crack- free nickel- chromium plating and the effects of experimental
variables on plating compositions. 相似文献
36.
Ruey-Shin Juang 《Journal of chemical technology and biotechnology (Oxford, Oxfordshire : 1986)》1992,54(1):75-80
The extraction of zinc from chloride solutions with tri-n-octylphosphine oxide (TOPO) dissolved in benzene has been thermodynamically studied based on the law of mass action. A model employing the simplified Pitzer equations for stoichiometric activity coefficient estimations is found to be effective for the explanation and prediction of the distribution data, and the thermodynamic extraction constant is determined as log Ket = 5.16 ± 0.11 at 20°C. 相似文献
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Summary The synthesis and characterization of side-chain liquid crystalline polyoxetanes containing 4-dodecanyloxyphenyl trans-4-alkylcyclohexanoate side groups are presented. All the obtained monomers exhibit smectic B mesomorphism, while all the obtained polymers present smectic A, smectic B and smectic G mesophases. A longer terminal alkyl group is leading to the formation of a more stable mesophase. 相似文献
40.
Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates 总被引:1,自引:0,他引:1
Woei-Kai Wang Dong-Sing Wuu Lin S.-H. Han P. Horng R.-H. Ta-Cheng Hsu Huo D.T.-C. Ming-Jiunn Jou Yuan-Hsin Yu Lin A. 《Quantum Electronics, IEEE Journal of》2005,41(11):1403-1409
The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed. 相似文献