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11.
The hydrogen annealing process has been used to improve surface roughness of the Si-fin in CMOS FinFETs for the first time. Hydrogen annealing was performed after Si-fin etch and before gate oxidation. As a result, increased saturation current with a lowered threshold voltage and a decreased low-frequency noise level over the entire range of drain current have been attained. The low-frequency noise characteristics indicate that the oxide trap density is reduced by a factor of 3 due to annealing. These results suggest that hydrogen annealing is very effective for improving device performance and for attaining a high-quality surface of the etched Si-fin.  相似文献   
12.
Effect of anisotropy of tin on thermomechanical behavior of solder joints   总被引:2,自引:0,他引:2  
Properties of body centered tetragonal tin are highly anisotropic. As a consequence large stresses can develop at the tin grain boundaries due to coefficient of thermal expansion mismatch during temperature excursions. A modeling approach to evaluate the 3D stress states that develop at grain boundaries during thermomechanical fatigue in tin-based solder is presented. Development of significant amounts of stresses in the plane of the grain boundary can cause grain-boundary sliding and surface-relief effects, while those normal to the grain boundary can cause grain-boundary decohesion and cracking.  相似文献   
13.
The explosion of on-line information has given rise to many manually constructed topic hierarchies (such as Yahoo!!). But with the current growth rate in the amount of information, manual classification in topic hierarchies results in an immense information bottleneck. Therefore, developing an automatic classifier is an urgent need. However, classifiers suffer from enormous dimensionality, since the dimensionality is determined by the number of distinct keywords in a document corpus. More seriously, most classifiers are either working slowly or they are constructed subjectively without any learning ability. In this paper, we address these problems with a fair feature-subset selection (FFSS) algorithm and an adaptive fuzzy learning network (AFLN) for classification. The FFSS algorithm is used to reduce the enormous dimensionality. It not only gives fair treatment to each category but also has ability to identify useful features, including both positive and negative features. On the other hand, the AFLN provides extremely fast learning ability to model the uncertain behavior for classification so as to correct the fuzzy matrix automatically. Experimental results show that both FFSS algorithm and the AFLN lead to a significant improvement in document classification, compared to alternative approaches.  相似文献   
14.
We have demonstrated the transmission performance of 10-Gb/s transmitters based on LiNbO/sub 3/ modulator using semiconductor optical amplifiers (SOAs) as booster amplifiers. Utilizing the negative chirp converted in SOAs and self-phase modulation induced by high optical power, we can successfully transmit 10-Gb/s optical signals over 80 km through the standard single-mode fiber with the transmitter using SOAs as booster amplifiers. SOAs can be used for booster amplifiers with a careful adjustment of the operating conditions. In order to further understand an SOA's characteristics as a booster amplifier, we model SOAs and other subsystems to verify the experimental results. Based on the good agreement between the experimental and simulation results, we can find the appropriate parameters of input signals for SOAs, such as extinction ratio, rising/falling time, and chirp parameter to maximize output dynamic range and available maximum output power (P/sub o,max/).  相似文献   
15.
Mobile wireless sensor networks (MWSNs) will enable information systems to gather detailed information about the environment on an unprecedented scale. These self‐organizing, distributed networks of sensors, processors, and actuators that are capable of movement have a broad range of potential applications, including military reconnaissance, surveillance, planetary exploration, and geophysical mapping. In many of the foreseen applications, the MWSN will need to form a geometric pattern without assistance from the user. In military reconnaissance, for example, the nodes will be dropped onto the battlefield from a plane and land at random positions. The nodes will be expected to arrange themselves into a predetermined formation in order to perform a specific task. Thus, we present algorithms for forming a line, circle, and regular polygon from a given set of random positions. The algorithms are distributed and use no communication between the nodes to minimize energy consumption. Unlike past studies of geometric problems where algorithms are either tested in simulations where each node has global knowledge of all the other nodes or implemented on a small number of robots, the robustness of our algorithms has been studied with simulations that model the sensor system in detail. The simulations demonstrate that the algorithms are robust against random errors in the sensors and actuators. © 2004 Wiley Periodicals, Inc.  相似文献   
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随着更加精细的SMT、BGA等表面贴装技术的运用,化学沉镍金(ENIG)作为线路板最终表面处理得到了越来越广泛的应用,同时可怕的“黑盘”现象也随之更广泛地“流行”起来,直接导致贴装后元器件焊接点不规则接触不良。为了贯彻执行最好的流程控制和采取有效的预防措施,了解这种焊接失败的产生机理是非常重要的,及早的观测到可能发生“黑盘”现象的迹象变得同样关键。本文介绍了一种简单的预先探测ENIG镍层“黑盘”现象的测试方法-镍层耐硝酸腐蚀性测试,这种测试可以用于作为一种常规的测试方法监测一般化学沉镍溶液在有效使用寿命范围内新鲜沉积的镍层的质量。利用Weibull概率统计分析在不同的金属置换周期(MTO)下镍层的可靠性能表现。结合试验结果得出了一个镍层耐硝酸腐蚀性的判定标准。  相似文献   
18.
As packet cellular networks are expected to support multimedia services, the authors incorporate the multimedia QoS requirements into the design of a new scheduling algorithm. The proposed wireless-adaptive fair scheduling tries to allocate time slots for each user with fair share by considering the varying channel condition while reflecting the stream requirements and achieving high throughput.  相似文献   
19.
The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions  相似文献   
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