Molecularly‐Engineered, 4D‐Printed Liquid Crystal Elastomer Actuators

Three‐dimensional structures that undergo reversible shape changes in response to mild stimuli enable a wide range of smart devices, such as soft robots or implantable medical devices. Herein, a dual thiol‐ene reaction scheme is used to synthesize a class of liquid crystal (LC) elastomers that can be 3D printed into complex shapes and subsequently undergo controlled shape change. Through controlling the phase transition temperature of polymerizable LC inks, morphing 3D structures with tunable actuation temperature (28 ± 2 to 105 ± 1 °C) are fabricated. Finally, multiple LC inks are 3D printed into single structures to allow for the production of untethered, thermo‐responsive structures that sequentially and reversibly undergo multiple shape changes.     

New method for threshold voltage extraction of high-voltage MOSFETs based on gate-to-drain capacitance measurement

This letter reports on the extraction of the threshold voltage of laterally diffused MOS transistors. A clear analysis of the device physics is performed, highlighting the correlation between the change of the electron charge distribution along the channel and the device capacitance variations when the gate voltage is swept. Using numerical simulations, it is shown that the peak of the gate-to-drain capacitance is related to the transition of the surface from weak to moderate inversion in the intrinsic MOS transistor at the location of the maximum doping concentration, which corresponds to the threshold voltage of the device according to the MOS theory. Comparison between conventional I/sub D///spl radic/g/sub m/ extraction and the new proposed capacitance peak method is performed on both technology computer-aided design simulations and measurements in order to confirm the new experimental technique and related theory.     

FinFET for high sensitivity ion and biological sensing applications

A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an external potential difference which provides a body threshold voltage modulation. The simulation results presented in this work clearly state the key features for an ultrasensitive FET based sensor: an enhancement low doped and partially gated transistor operating in weak-moderate inversion regime. The optimized sensitivity, obtained when the width of the fin is equal to the gate height (w_NW ∼ h_g), reaches a value of 85% for an extraction current, I_d, of 0.1 μA. These results pave the way for the fabrication process of an innovative CMOS compatible sensing system.     

A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis

A self-limiting dielectrophoresis technique, aimed at deterministically assembling individual or bundles of single-walled carbon nanotubes (SWCNTs) and multiwalled carbon nanotubes (MWCNTs), is experimentally investigated. A limiting resistor is used to control the electric field after the deposition of a single carbon nanotube. The role of some key parameters such as voltage and duration of the deposition with and without the limiting resistor is studied.     

Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials

The fabrication of very narrow metal lines by the lift‐off technique, especially below sub‐10 nm, is challenging due to thinner resist requirements in order to achieve the lithographic resolution. At such small length scales, when the grain size becomes comparable with the line‐width, the built‐in stress in the metal film can cause a break to occur at a grain boundary. Moreover, the line‐width roughness (LWR) from the patterned resist can result in deposited metal lines with a very high LWR, leading to an adverse change in device characteristics. Here a new approach that is not based on the lift‐off technique but rather on low temperature hydrogen reduction of electron‐beam patterned metal naphthenates is demonstrated. This not only enables the fabrication of sub‐10 nm metal lines of good integrity, but also of low LWR, below the limit of 3.2 nm discussed in the International Technology Roadmap for Semiconductors. Using this method, sub‐10 nm nickel wires are obtained by reducing patterned nickel naphthenate lines in a hydrogen‐rich atmosphere at 500 °C for 1 h. The LWR (i.e., 3 σ_LWR) of these nickel nanolines was found to be 2.9 nm. The technique is general and is likely to be suitable for fabrication of nanostructures of most commonly used metals (and their alloys), such as iron, cobalt, nickel, copper, tungsten, molybdenum, and so on, from their respective metal–organic compounds.     

Computer-aided lesion diagnosis in automated 3-D breast ultrasound using coronal spiculation

A computer-aided diagnosis (CAD) system for the classification of lesions as malignant or benign in automated 3-D breast ultrasound (ABUS) images, is presented. Lesions are automatically segmented when a seed point is provided, using dynamic programming in combination with a spiral scanning technique. A novel aspect of ABUS imaging is the presence of spiculation patterns in coronal planes perpendicular to the transducer. Spiculation patterns are characteristic for malignant lesions. Therefore, we compute spiculation features and combine them with features related to echotexture, echogenicity, shape, posterior acoustic behavior and margins. Classification experiments were performed using a support vector machine classifier and evaluation was done with leave-one-patient-out cross-validation. Receiver operator characteristic (ROC) analysis was used to determine performance of the system on a dataset of 201 lesions. We found that spiculation was among the most discriminative features. Using all features, the area under the ROC curve (A(z)) was 0.93, which was significantly higher than the performance without spiculation features (A(z)=0.90, p=0.02). On a subset of 88 cases, classification performance of CAD (A(z)=0.90) was comparable to the average performance of 10 readers (A(z)=0.87).     

Hydrodynamically Guided Hierarchical Self‐Assembly of Peptide–Protein Bioinks

Effective integration of molecular self‐assembly and additive manufacturing would provide a technological leap in bioprinting. This article reports on a biofabrication system based on the hydrodynamically guided co‐assembly of peptide amphiphiles (PAs) with naturally occurring biomolecules and proteins to generate hierarchical constructs with tuneable molecular composition and structural control. The system takes advantage of droplet‐on‐demand inkjet printing to exploit interfacial fluid forces and guide molecular self‐assembly into aligned or disordered nanofibers, hydrogel structures of different geometries and sizes, surface topographies, and higher‐ordered constructs bound by molecular diffusion. PAs are designed to co‐assemble during printing in cell diluent conditions with a range of extracellular matrix (ECM) proteins and biomolecules including fibronectin, collagen, keratin, elastin‐like proteins, and hyaluronic acid. Using combinations of these molecules, NIH‐3T3 and adipose derived stem cells are bioprinted within complex structures while exhibiting high cell viability (>88%). By integrating self‐assembly with 3D‐bioprinting, the study introduces a novel biofabrication platform capable of encapsulating and spatially distributing multiple cell types within tuneable pericellular environments. In this way, the work demonstrates the potential of the approach to generate complex bioactive scaffolds for applications such as tissue engineering, in vitro models, and drug screening.     

Extraction method for source series resistance and transverse field mobility reduction coefficient using the MOSFET saturation region

A new extraction method for source series resistance and mobility reduction coefficient with transverse field, based on the MOSFET transconductance modeling in the saturation region, is reported. The simple associated transconductance model also appears to be extremely useful for optimal parameter extraction. The proposed method is validated on partially depleted SIMOX MOSFETs.     

An EKV-based high voltage MOSFET model with improved mobility and drift model

An EKV-based high voltage MOSFET model is presented. The intrinsic channel model is derived based on the charge based EKV-formalism. An improved mobility model is used for the modeling of the intrinsic channel to improve the DC characteristics. The model uses second order dependence on the gate bias and an extra parameter for the smoothening of the saturation voltage of the intrinsic drain. An improved drift model [Chauhan YS, Anghel C, Krummenacher F, Ionescu AM, Declercq M, Gillon R, et al. A highly scalable high voltage MOSFET model. In: IEEE European solid-state device research conference (ESSDERC), September 2006. p. 270–3; Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] is used for the modeling of the drift region, which gives smoother transition on output characteristics and also models well the quasi-saturation region of high voltage MOSFETs. First, the model is validated on the numerical device simulation of the VDMOS transistor and then, on the measured characteristics of the SOI-LDMOS transistor. The accuracy of the model is better than our previous model [Chauhan YS, Anghel C, Krummenacher F, Maier C, Gillon R, Bakeroot B, et al. Scalable general high voltage MOSFET model including quasi-saturation and self-heating effect. Solid State Electron 2006;50(11–12):1801–13] especially in the quasi-saturation region of output characteristics.