Charge carrier transport anisotropy in ultrananocrystalline diamond films

The optoelectronic properties of ultrananocrystalline diamond films (UNCD) grown using N₂ = 0 and 5% in the deposition gas mixture, are investigated by transient photocurrent measurements under nanosecond light pulses, both in planar and sandwich contact arrangements.Independent of contact configuration and N₂% value, very similar characteristic times in the 6-7 ns range are detected in the nanosecond range, reflecting a homogeneous distribution of states responsible for such decay times. On a longer time scale, nitrogen addition appears to slow down carrier transport promoting trapping and detrapping processes responsible for single and two power law photocurrent decays in films deposited using N₂ = 5% for sandwich and planar contact arrangements, respectively. Such a result suggests a nitrogen induced transport anisotropy tentatively related to structural modifications occurring at relatively low N₂%.     

Image restoration in chirp-pulse microwave CT (CP-MCT)

Chirp-pulse microwave computed tomography (CP-MCT) is a technique for imaging the distribution of temperature variations inside biological tissues. Even if resolution and contrast are adequate to this purpose, a further improvement of image quality is desirable. In this paper, we discuss the blur of CP-MCT images and we propose a method for estimating the corresponding point spread function (PSF). To this purpose we use both a measured and a computed projection of a cylindrical phantom. We find a good agreement between the two cases. Finally the estimated PSF is used for deconvolving data corresponding to various kinds of cylindrical phantoms. We use an iterative nonlinear deconvolution method which assures nonnegative solutions and we demonstrate the improvement of image quality which can be obtained in such a way.     

CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxy

The surface growth kinetics of CdTe and HgTe have been investigated during molecular and metalorganic molecular beam epitaxy. The surface growth kinetics was studied through in-situ measurements of the growth rate as a function of flux ratio and substrate temperature on the (001), (111)B, and (211)B CdTe surface orientations. For the (001) and (111)B CdTe growth kinetics, the existence of low binding energy surface precursor sites was proposed for both molecular and atomic growth species before lattice incorporation. Intensity oscillations were observed during HgTe growth on misoriented (111)B surfaces and during CdTe growth on the (211)B orientation. The (211)B surface reconstructions displayed both vicinal and singular surface characteristics, depending on the growth flux ratio.     

Empiricism versus science in the teaching of nephrology

Recent changes in medical courses in Italy reflect a recognition that both theoretical education and clinical practice are essential components of a doctor's training. These two parallel branches of medical education find their origins in the beliefs of Galen, mentor of medicine as a pure science, and of Alexander of Aphrodisias, promoter of the predominant role of empiricism. Neither a dogmatic nor an empiric approach to the study of medicine, however, is sufficient on its own.     

A solid-phase microextraction device for the analysis of electrochemical reaction products by gas chromatography/mass spectrometry

Presented is a solid-phase microextraction syringe-electrode assembly that may be used to identify electrode reaction products. After an electrochemical experiment, the electrode within this syringe-electrode assembly can be introduced into the injection port of a gas chromatograph. Electrochemical reaction products can be analyzed, provided they adhere to the electrode surface and are amenable to gas chromatographic/mass spectrometric analysis. We highlight the potential usefulness of this device using well-known electrochemical reaction of quinones.     

使简单欧姆计具备千兆欧量程的积分器

德州仪器公司(TI)的IVC102精密积分器有高质量的内部电容.图1的电路可以用来测量非常高的Rx电阻值.一只精密差分放大器(TI的INA105)为Rx施加一个基准电压.积分期间,在IVC12的输出端产生一个负电压斜坡Vo.两只LM311将Vo的振幅与两个固定阈值作比较,产生两个数字信号:开始和停止.     

Finite element response sensitivity analysis using three‐field mixed formulation: general theory and application to frame structures

This paper presents a method to compute response sensitivities of finite element models of structures based on a three‐field mixed formulation. The methodology is based on the direct differentiation method (DDM), and produces the response sensitivities consistent with the numerical finite element response. The general formulation is specialized to frame finite elements and details related to a newly developed steel–concrete composite frame element are provided. DDM sensitivity results are validated through the forward finite difference method (FDM) using a finite element model of a realistic steel–concrete composite frame subjected to quasi‐static and dynamic loading. The finite element model of the structure considered is constructed using both monolithic frame elements and composite frame elements with deformable shear connection based on the three‐field mixed formulation. The addition of the analytical sensitivity computation algorithm presented in this paper extends the use of finite elements based on a three‐field mixed formulation to applications that require finite element response sensitivities. Such applications include structural reliability analysis, structural optimization, structural identification, and finite element model updating. Copyright © 2006 John Wiley & Sons, Ltd.     

A general method for small-signal circuit analysis considering thermal effects

It is well known that the behaviour of integrated circuits is strongly affected by thermal feedback. A general method for evaluating, by linear analysis, the complete circuit performance is described that considers these effects. The procedure can easily be implemented using only well known computer programs for the circuit analysis. Simple models for a number of devices (diodes, transistors and f.e.t.s) used in integrated circuits are given. Examples, using the circuit-analysis program ECAP, are shown.