硫化铜矿中提取铜的新方法研究

对从硫化铜矿中提取铜的溶剂进行了详细研究，提出了“过硫酸铵－氨水－Ａｇ￣＋”催化、氧化、络合的提取法。     

压型钢板组合楼板承载力的有限元分析

压型钢板组合楼板是 2 0世纪发展起来的一种新型结构形式。它具有显著的优势 ,如轻质、高强 ,施工快捷等 ,将在未来的建筑领域中大有作为。组合楼板的承载力主要取决于钢板 -混凝土界面处的抗剪强度。建立了一个二维有限元模型来研究单向组合板的性能。并将计算结果与试验数据进行对比 ,验证了模型的有效性     

晋城市煤炭加工利用现状、存在问题及发展建议

阐述了晋城市煤加工利用的现状 ,分析了煤炭加工利用存在的问题 ,提出了今后的发展建议     

PIMS在企业生产经营中的应用

介绍PIMS在企业生产经营中的应用 ,运用PIMS可对炼油化工企业进行原油采购决策、加工保本点预算、效益预测、物流分配、整体流程优化、投资分析、瓶颈制约因素探讨、原料和产品库存管理、经济活动分析等 ,并结合生产装置特点和市场环境影响因素 ,获取最大生产经营效益。根据影子价格 ,找出提高效益的潜力 ,确定产品、中间产品或半成品合理价格 ,规范关联交易 ,增强企业市场应变能力 ,提高经济效益与管理水平。     

Skeletal Isomerization and Inter—molecular Hydrogen Transfer Reactions in Catalytic Cracking

Bimolecular hydrogen transfer and skeletal isomerization the important secondary reac-tions among catalytic cracking reactions,which affect product yield distribution and product quality,Catalyst properties and operating parameters have great impact on bimolecular hydrogen transfer and skeletal isomerization reactions .Bimolecular hydrogen transfer activity and skeletal isomrization activity of USY-containing catalysts are higher thn that of ZSM-5-containing catalyst.Coke deposition on the active sites of catalyst may suppress bimolecular hydrogen transfer activity and skeletal isomer-ization activity of catlys in different degrees.Short raction time causes a decrease of hydrogen trans-fer reaction,but and increase of skeletal isomerization reaction compared to cracking reaction in catalytic cracking process.     

铁路冷藏运输运价分析

本文对各种运输方式易腐货物的运价进行了比较分析,对铁路冷藏运输的现行运价和保本运价进行了讨论,提出了铁路冷藏运输运价改革的若干建议,可供铁路进行冷藏运输改革参考。     

宽带无源光网络(BPON)关键技术的发展与研究

宽带无源光网络（BPON）是实现宽带、多业务接入的理想物理平台，本文介绍了BPON网络的发展，重点讨论了将ATM技术和PON技术相结合的APON系统及其升级系统SuperPON的基本结构和关键技术，对最近兴起的将以太技术和PON技术相结合的EPON系统的基本概念和工作原理也进行了阐述，并对未来BPON技术的发展进行了展望。     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs