1,5-己二烯交联烯烃聚合物的合成及其抗剪切稳定性

以金属配合物为催化剂、1,5-己二烯为交联剂,采用本体聚合法合成了交联超高相对分子质量烯烃类聚合物(简称交联聚合物)。用傅里叶变换红外光谱、核磁共振、凝胶渗透色潜表征交联聚合物的结构和相对分子质量。用旋转黏度计和超声波仪研究了1,5-己二烯用量对交联聚合物溶液表观黏度的影响及交联聚合物的相对分子质量对交联聚合物溶液抗剪切稳定性的影响。实验结果表明,在最佳聚合条件(单体80mL、助催化剂0．4mL、CS-1催化剂0．090g、1,5-己二烯0．40mL、0℃、24 b)下所合成的交联聚合物的重均相对分子质量为7．7×106,数均相对分子质量3．6×106。加入少量1,5-己二烯能提高交联聚合物的抗剪切能力,同时也能提高交联聚合物的相对分子质量。交联聚合物的相对分子质量越大,抗剪切稳定性越好。1,5-己二烯用量约为0．1 mL时(单体40 mL),交联聚合物溶液的表观黏度达到最大值(16．8 mPa·s)。     

水泥浆失水制约下套管与井眼间隙的研究

通过对水泥浆失水规律的室内试验分析以厦对注水泥顶替过程中水泥浆失水桥堵套管与井眼间隙问题的研究，建立了顶替过程中滤失层不发生水泥浆失水而桥堵环形空间的临界失水量计算模型，提出了调配水泥浆失水性能和确定合理套管井眼间隙的具体方法，对注水泥现场施工和井身结构设计具有一定的指导意义。     

RF磁控溅射制备钛酸锶钡BST纳米薄膜

钛酸锶钡(BST)薄膜作为一种高K介质材料在微电子和微机电系统等领域具有广阔的应用前景,人们已对BST薄膜的制备工艺技术和介电性能进行了大量的研究。BST纳米薄膜的制备工艺直接影响和决定着薄膜的介电性能(介电常数、漏电流密度、介电强度等)。对RF磁控反应溅射制备BST纳米薄膜的工艺技术进行了综述。从溅射靶的制备、溅射工艺参数的优化、热处理、薄膜组分的控制,及制备工艺对介电性能的影响等方面,对现有研究成果进行了较全面的总结。     

Corrosion morphology of AZ91D exposed in an atmospheric environment

The focused ion beam technique was employed to investigate the atmospheric corrosion morphology of AZ91D. It was found that the α matrix of the alloy was preferentially corroded in the areas adjacent to intermetallic phases. The most interesting finding was that the corrosion products in corrosion cavities were pelletlike, which has never been reported before.     

Structure, properties, and thermal stability of nanocrystallite Fe-Ti-N soft magnetic films

We deposited Fe-Ti-N magnetic films with a high sputtering power of 7 W/cm/sup 2/. When the composition of the films was in the range of Fe-Ti(3.9 at.%)-N(8.8 at.%) to Fe-Ti(3.3 at.%)-N(13.5 at.%), the films were composed of /spl alpha/' and Ti/sub 2/N precipitates. With the addition of nitrogen, 4/spl pi/M/sub s/ became higher than that of pure iron, reaching a maximum of 23.8 kG. At the same time, H/sub c/ was reduced to a minimum of 1.12 Oe. The best films can meet the needs of the recording head in dual-element giant magnetoresistive/inductive heads, yielding high storage density (10 Gb/in/sup 2/). The incorporation of N in /spl alpha/-Fe brought about the /spl alpha/' phase with its higher saturation magnetization. Ti additions inhibited the equilibrium decomposition /spl alpha/'/spl rarr//spl alpha/+/spl gamma/'. Because H/sub C//sup D//spl prop/D/sup 6/, where D is average grain diameter, grain size control is very important. The nitrogen induces severe distortion of the /spl alpha/' lattice, which can cause the grains to break into pieces and reduce the grain size. High sputtering power also led to the formation of fine grains, with diameter in the order of 14 nm. Probably Ti/sub 2/N is preferentially precipitated on the grain boundary, pinning the grain boundary and stabilizing the grain size during high-temperature heat treatment. The temperature limit for stability of the structure and its associated low coercivity was not less than 520/spl deg/C.     

铌和钨对γ-TiAl基合金热稳定性的影响

采用光学显微镜(OM)，扫描电镜(SEM)，X射线衍射研究了TiAl—5Nb，TiAl—14．3Nb，TiAl—8Nb—1W，TiAl—12．3Nb-2W四种合金片层组织在1000℃的热稳定性。结果表明，TiAl—12．3Nb-2W合金热稳定性最好，但合金元素对TiAl基合金热稳定性的影响机理还有待进一步的研究。     

片式多层陶瓷微波谐振器

介绍了片式陶瓷微波谐振器的工艺过程、谐振器的结构以及结构对谐振器参数的影响,谐振器与外电路的耦合采用耦合间隙的方法与谐振单元在同一层内实现,这种新结构既可给制备工艺带来方便,又可减少工艺所带来的误差。用多层陶瓷工艺技术,用高介电常数、低温烧结微波陶瓷实现了中心频率为1GHz,有载品质因数大于80的试验双端口多层微波谐振器。微波谐振器体积小,整个谐振器的尺寸为7mm×2mm×1mm,适用于表面贴装技术。     

Analysis and optimization of DS-CDMA systems with time-limited partial response chip waveforms

Conventional direct sequence code division multiple access systems (DS-CDMA) using offset quadrature phase shift key (OQPSK) usually employ a strictly bandlimited partial response square-root raised cosine pulse as the chip waveform. They have the disadvantage of large envelope fluctuation that will incur performance degradation due to the intermodulation and bandwidth enlargement caused by post nonlinear processing. To improve the performance of DS-CDMA systems, the chip waveform and receiver should be properly selected. This paper presents a systematic performance analysis of a matched filter receiver and zero-forcing filter (ZF) receiver for DS-CDMA using a time-limited partial response chip waveform. Nevertheless the systematic performance analysis is applicable to bandlimited chip pulse as well. For the zero-forcing filters, we propose to select the frequency responses that satisfy the first Nyquist criterion. With this class of filters, we can choose the roll-off factor to minimize the total power of multiple access interference and noise power. The zero-forcing filter with proper choice of roll-off factor, referred to as optimum ZF, yields a performance better than the matched filter counterpart. The bit error rate (BER) performance of the optimum ZF with superposed quadrature amplitude modulation signal as the time pulse waveform is evaluated. It is shown that the optimum ZF provides better BER performance than conventional OQPSK and minimum shift keying, and its envelope uniformity is much better than that of OQPSK.     

低阻VDMOSFET的优化设计与制造

文章对9926型双N沟增强型VDMOSFET进行了结构和版图的优化设计。给出了该器件的纵横向结构参数,材料的物理参数和版图总体结构。单胞结构的优化设计使单胞密度达到204万个/cm2,比国际市场现有产品的单胞密度(156万个/cm2)提高了30%。这种设计采用浅n+注入工艺可使器件生产成本下降31%。最后对研制结果进行了分析讨论。