The influence of Y ion implantation on the oxidation behaviour of ZrN coating

The purpose of this work was to determine the influence of ion implantation on the oxidation resistance of ZrN coatings. Samples were prepared on AISI 304 stainless steel by cathodic arc deposition. They were submitted to Y implantation at 150 °C with various fluences using a metal vacuum vapour arc ion implanter. The oxidation behaviour of as-deposited and Y-implanted ZrN coatings was characterized by weight gain measurement. The oxidation resistance of the ZrN coating was reduced after it was implanted with yttrium at a low fluence but improved at higher fluence. X-ray photoemission spectroscopy and glancing angle X-ray diffraction were employed to analyze the valence states of the oxide scale and the phase composition of the oxidation layers. Yttrium implantation can greatly improve the oxidation resistance of the ZrN coating.     

Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD

The hafnium and silicon precursors, Hf(NMe₂)₄ and Bu^tMe₂SiOH, have been investigated for the MOCVD of high-κ hafnium silicate, (HfO₂)_1–x –(SiO₂) _x films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35–40% SiO₂. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800–1000 °C.     

Understanding High Critical Currents in YBa2Cu3O7 Thin Films and Coated Conductors

The main challenges for the success of high temperature superconducting wires, the YBa₂Cu₃O₇ (YBCO) coated conductors (CC), are to avoid the the weak-link problem through the production of biaxially textured films, and to increase the critical current density (J _c) through the introduction of large densities of appropriate defects. To that end, it is essential to understand the pinning mechanisms and their correlation with the microstructure of the CC. We first present a brief overview of the main methods currently used to produce YBCO CC, and we describe the architecture of the YBCO on IBAD fabricated at Los Alamos, summarizing the recent improvements of their structural and superconducting properties. Then, we analyze some aspects of the J _c dependence on temperature and magnetic field (orientation and intensity) for the best CC available, and we compare and contrast the results with those of YBCO thin films on single crystal substrates, in order to determine if the defects controlling the pinning mechanisms are the same in both cases. Our results indicate that over large field and angular ranges J _c on CC is higher than J _c in thin films on SCS.     

Three‐dimensional finite element computations for frictional contact problems with non‐associated sliding rule

This paper presents an algorithm for solving anisotropic frictional contact problems where the sliding rule is non‐associated.The algorithm is based on a variational formulation of the complex interface model that combine the classical unilateral contact law and an anisotropic friction model with a non‐associated slip rule. Both the friction condition and the sliding potential are elliptical and have the same principal axes but with different semi‐axes ratio. The frictional contact law and its inverse are derived from a single non‐differentiable scalar‐valued function, called a bi‐potential. The convexity properties of the bi‐potential permit to associate stationary principles with initial/boundary value problems. With the present formulation, the time‐integration of the frictional contact law takes the form of a projection onto a convex set and only one predictor–corrector step addresses all cases (sticking, sliding, no‐contact). A solution algorithm is presented and tested on a simple example that shows the strong influence of the slip rule on the frictional behaviour. Copyright 2004 John Wiley & Sons, Ltd.     

冶炼烟尘比电阻与电除尘器效率的关系

本文分析了冶炼过程烟气比电阻与电除尘效率的关系，提出了降低比电阻以提高除尘效率的主要措施。     

FEM for evaluation of weight functions for SIF, COD and higher-order coefficients with application to a typical wedge splitting specimen

In the evaluation of accurate weight functions for the coefficients of first few terms of the linear elastic crack tip fields and the crack opening displacement (COD) using the finite element method (FEM), singularities at the crack tip and the loading point need to be properly considered. The crack tip singularity can be well captured by a hybrid crack element (HCE), which directly predicts accurate coefficients of first few terms of the linear elastic crack tip fields. A penalty function technique is introduced to handle the point load. With the use of these methods numerical results of a typical wedge splitting (WS) specimen subjected to wedge forces at arbitrary locations on the crack faces are obtained. With the help of appropriate interpolation techniques, these results can be used as weight functions. The range of validity of the so-called Paris equation, which is widely used in the evaluation of the COD from the stress intensity factors (SIFs), is established.