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991.
This paper examines the current status and methodologies of study of material and system reliability in Microelectromechanical Systems (MEMS). This includes: a review of the current literature in the area of MEMS regarding failure analysis experimental investigations; testing methods and philosophies for material characterization and possible mechanistic analytical solutions for estimating material properties. The paper proposes a reliability framework that encompasses all the available information. This statistical platform will enable the MEMS design engineer to distill all the available information in the literature into a stand-alone semi-empirical material reliability model, and a holistic system-level model for a complete system.  相似文献   
992.
The growth of GaAs on polycrystalline silicon-on-insulator (SOI) substrates by metal organic vapor phase epitaxy using a two-step growth process was studied in this work. We have compared the variation of the growth temperature and the thickness of the initial GaAs epilayer in the structures grown on polycrystalline SOI to ones grown on SOI and epi-Si. Structural properties were studied using high-resolution X-ray diffraction (XRD). The growth temperature had a strong effect on the FWHM of the (0 0 4) XRD curve in structures grown on SOI and epi-Si. In the case of polycrystalline SOI the effect was not as strong. Optical properties of the samples in which the optically active layer consisted of self-organized In0.5Ga0.5As quantum dots were investigated by photoluminescence measurements. The photoluminescence intensity from structures grown on polycrystalline SOI was comparable to that from structures grown on SOI and epi-Si.  相似文献   
993.
994.
We introduce optical local-area network (LAN) architectures based on multimode optical fiber and components, short wavelength lasers and detectors, and the widely used fast Ethernet protocol. These architectures are designed to lower the costs associated with passive optical LAN implementation. Further reduction in overall cost is achieved through decreased network downtime, lower maintenance cost, extended geometrical spans, and larger headroom for future capacity increase. These optically transparent networks represent a novel approach for implementing fiber-to-the-desk.  相似文献   
995.
996.
The effects of 2 rigorous strategic approaches to reading comprehension for 32 5th-grade students who struggle with reading were investigated. The first approach, TWA (Think before reading, think While reading, think After reading), was taught following explicit self-regulated strategy development instructional procedures (K. R. Harris & S. Graham. 1999). The second approach, reciprocal questioning (RQ), was taught following Cooperative ReQuest procedures developed by A. V. Manzo. U. C. Manzo, and T. H. Estes (2001). Compared with RQ students, TWA students improved significantly (with medium to large effect sizes) on 5 oral reading comprehension measures. There were no significant differences, however, between groups on 3 written comprehension measures, self-efficacy, or motivation. Students were positive about each intervention. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
997.
998.
999.
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling.  相似文献   
1000.
This paper evaluates experimentally the performance of a novel axial velocity estimator, the 2D autocorrelator, and its Doppler power estimation counterpart, the 2D zero-lag autocorrelator, in the context of ultrasound color flow mapping. The evaluation also encompasses the well-established 1D autocorrelation technique for velocity estimation and its corresponding power estimator (1D zero-lag autocorrelator), to allow performance comparisons under identical conditions. Clutter-suppressed in vitro data sets from a steady-flow system are used to document the effect of the range gate and ensemble length, noise level and angle of insonation on the precision of the velocity estimates. The same data sets are used to examine issues related to the estimation of the Doppler signal's power. The first-order statistics of power estimates from regions corresponding to flow and noise are determined experimentally and the ability of power-based thresholding to separate flow signals from noise is characterized by means of ROC analysis. In summary, the results of the in vitro evaluation show that the proposed 2D-autocorrelation form of processing is consistently better than the corresponding 1D-autocorrelation techniques, in terms of both velocity and power estimation. Therefore, given their relatively modest implementation requirements, the 2D-autocorrelation algorithms for velocity and power estimation appear to represent a superior, yet realistic, alternative to conventional Doppler processing for color flow mapping  相似文献   
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