A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

In this paper, the effect of the nonself-aligned process on the performance variation of a bottom-gate metal oxide semiconductor (MOS) transistor is discussed using a device simulator. The simulation results predict that the nonself-aligned bottom-gate MOS transistor cannot be scaled into the deep submicron regions. A simple fully self-aligned bottom-gate (FSABG) metal oxide semiconductor field effect transistor (MOSFET) technology is then proposed and developed. A new technique for forming thermal oxide on poly-Si serving as the bottom-gate dielectric is also investigated. It is found that the quality of the oxide on the poly-Si recrystallized by the metal induced uni-lateral crystallization (MIUC) is much higher than that by the solid phase crystallization (SPC). Deep submicron fully self-aligned bottom-gate pMOS transistors are fabricated successfully using the proposed technology. The experimentally measured results indicate the device performances depend strongly on the channel-width, and get comparable to that of a single crystal MOSFET if the channel width is less than 0.5/spl mu/m. The effects of the channel width on the device performances are discussed. In addition, the experimental results also confirm that the proposed technology has a good control of the channel film thickness.     

A low-noise L-band EDFA with a 1500-nm Raman-pumped dispersion-compensating fiber section

This report presents a low-noise L-band erbium-doped fiber amplifier (EDFA) with a dispersion-compensating Raman amplifier. With an optimized prestage and 1500-nm Raman-pump laser diodes, the proposed EDFA achieved an internal noise figure of less than 4.5 dB over a 33-nm flat gain bandwidth within 0.5 dB at -2 dBm of large signal input power.     

一个新的门限多重代理多重签名方案

In the Paper, we proposed a threshold mult- proxy multi-signature with share verification.In the scheme,a subset of original signers allows a designated group to proxy signers to sign on behalf of the original group, A message m has to be signed of proxy signers who can represent the proxy group. Then, the proxy signature is sent to the verifier group.A subset of verifiers in the verifier group can also represent the group to authenticate the proxy signature.In othe words,some threshold values will be given to indicate the number of persons to represent a group to authorize the signing capability or to sign a messagye or to verify the proxy signature.     

Smart CMOS Image Sensor With High SBR and Subpixel Resolution for Light-Section-Based Range Finding

Light-section (LS)-based range finders are commonly used for obstacle recognition in home service robots and autonomous vehicles. This paper proposes a smart CMOS image sensor for LS-based range finding. The proposed sensor can detect the laser light, even under very strong ambient-illumination levels by using a multiple-capture frame-correlated double sampling (F-CDS), which is realized with an inverter-based switched-capacitor F-CDS accumulator. The proposed sensor also includes on-chip winner-take-all circuits that significantly reduce the software and hardware complexity of interpolation for the subpixel resolution. The prototype chip was fabricated using a 0.35-mum CMOS process. The measurement results show that the proposed sensor can detect a laser line with an intensity that is 56.5 dB lower than that of the ambient illumination, providing a spatial resolution of plusmn0.16 pixels.     

10 gbit/s 0.0065 mm2 6 mw analogue adaptive equaliser utilising negative capacitance

An area- and power-efficient analogue adaptive equaliser (AEQ) is realised in a 0.13 μm CMOS technology. The negative capacitance circuits are exploited at the equalisation filter to achieve wider bandwidth and larger high-frequency boosting, instead of using passive inductors that lead to a large chip area. Measured results demonstrate the data rate of 10 Gbit/s for 20 and 34 inch FR4 traces as channels, while dissipating only 6 mW from a single 1.2 V supply. The chip core occupies an extremely small area of 50 x 130 μm². To the best of the authors' knowledge, this chip achieves the lowest power consumption and the smallest chip area among the recently reported AEQs.     

Single, Depolarized, CW Supercontinuum-Based Wavelength-Division-Multiplexed Passive Optical Network Architecture With C-Band OLT, L-Band ONU, and U-Band Monitoring

We propose and experimentally demonstrate a novel bidirectional wavelength-division-multiplexed passive optical network architecture that fully utilizes the superior optical properties of an incoherent continuous-wave (CW) supercontinuum (SC) source. The proposed architecture, which incorporates low-cost Fabry-Perot laser diodes that have been wavelength locked by spectrum-sliced beams from a depolarized 130-nm-bandwidth CW SC source, is based on a unique wavelength band allocation scheme of the C-band for an optical line terminal (OLT), the L-band for optical network units (ONUs), and the U-band for channel monitoring. A cost-effective network that features a single broadband source at the OLT, and no additional wavelength- band-selective monitoring beam reflector at each ONU can be readily achieved. The experimental demonstration presented in this paper is carried out at a data rate of 622 Mb/s over a 25-km standard single-mode fiber.     

Thermal analysis and design of a 75-W hybrid-type DC–DC converter for space applications

Hybrid DC–DC converters for space applications should be designed for operation at full rated power within the military specification for temperature range of −55 to +125 °C. Hence, the thermal design is a crucial step in the design process of converter, ensuring that no component of the converter exceeds its rated maximum operating temperature. One of the objectives of this work is to guarantee that all electronic components operate below their maximum allowable temperature. For this purpose, a three dimensional model of a converter based on the finite element method was developed. Results based on numerical simulation were validated by experimental data from infrared camera. The total amount of dissipated power in every component was determined experimentally based on a prototype converter. In the case of a component with high power consumption, such as the field effect transistor, the increase in temperature was minimized by applying designed heat sink with a high-thermal-conductivity material.     

数字调谐系统在组合音响上的应用

本文介绍了NEC公司大规模专用集成电路μPD1715G——016及其在组合音响上的应用,讨论了设计中的几点关键性问题,并分析了解决问题的方法和途径。