一种支持ECC算法的传输层安全协议

首先介绍了RSA算法和ECC算法（Elliptic Curve Cryptography）在国内外的应用情况,接着介绍了RSA算法在传输层安全协议中的应用情况,并以身份认证系统为例,原有身份认证系统采用TLS（Transport Layer Security）协议,通过对协议的修改,完成协议对椭圆曲线的支持,提出了改进的支持ECC算法的传输层安全协议,协议内容参照传输层安全协议（RFC4346TLS1．1）,结合实际应用需求,在TLS1．1的握手协议中增加了ECC的认证模式和密钥交换模式,取消了DH密钥协商方式,修改了密码套件的定义。     

PFMEA在SMT装配中的应用研究

SMT装配过程涉及多个设备和多道工序,工艺流程多样,为了保证SMT产品的质量与可靠性,需要采用科学的方法研究SMT装配过程。文章将PFMEA这一可靠性研究工具引入SMT装配过程,简介PFMEA的应用流程,并以单面贴装工艺漉程为例,说明应用PFMEA研究SMT装配过程的实施方法。     

可视通信系统开发调试环境的研究

提出并实现了基于 Ｔ Ｃ Ｐ／ Ｉ Ｐ 的 Ｈ３２ Ｘ 系列 Ｖｉｄｅｏ Ｐｈｏｎｅ 局域网仿真开发环境。给出了系统结构,讨论了开发环境的协议仿真模型、数据回路设计、数据流管理、通信仿真、在线监测、错误报告与分析、数据分析统计与性能指标测试等问题。     

图像语义提取方法研究

为解决从图像的低层视觉特征到高层语义特征的＂语义鸿沟＂问题,对当前的语义提取方法进行研究,简单介绍了图像语义层次模型,并根据语义信息的来源不同,归纳总结了图像语义中基于处理范围的方法,基于机器学习的方法,基于人机交互的方法和基于外部信息源的提取方法,这些工作为图像语义提取和图像语义检索等研究提供有益参考。     

Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors

Here, we report on the effects of channel (or active) layer thickness on the bias stress instability of InGaZnO (IGZO) thin-film transistors (TFTs). The investigation on variations of TFT characteristics under the electrical bias stress is very crucial for commercial applications. In this work, the initial electrical characteristics of the tested TFTs with different channel layer thicknesses (40, 50, and 60 nm) are performed. Various gate bias (V_GS) stresses (10, 20, and 30 V) are then applied to the tested TFTs. For all V_GS stresses with different channel layer thickness, the experimentally measured threshold voltage shift (ΔV_th) as a function of stress time is precisely modeled with stretched-exponential function. It is indicated that the ΔV_th is generated by carrier trapping but not defect creation. It is also observed that the ΔV_th shows incremental behavior as the channel layer thickness increases. Thus, it is verified that the increase of total trap states (N_T) and free carriers resulted in the increase of ΔV_th as the channel layer thickness increases.     

Energy-Efficient Large-Scale Antenna Systems with Hybrid Digital-Analog Beamforming Structure

A large-scale antenna system(LSAS) with digital beamforming is expected to significantly increase energy efficiency(EE) and spectral efficiency(SE) in a wireless communication system. However, there are many challenging issues related to calibration, energy consumption, and cost in implementing a digital beamforming structure in an LSAS. In a practical LSAS deployment, hybrid digital-analog beamforming structures with active antennas can be used. In this paper, we investigate the optimal antenna configuration in an N × M beamforming structure, where N is the number of transceivers, M is the number of active antennas per transceiver, where analog beamforming is introduced for individual transceivers and digital beamforming is introduced across all N transceivers. We analyze the green point, which is the point of maximum EE on the EE-SE curve, and show that the log-scale EE scales linearly with SE along a slope of-lg2/N. We investigate the effect of M on EE for a given SE value in the case of fixed NM and independent N and M. In both cases, there is a unique optimal M that results in optimal EE. In the case of independent N and M, there is no optimal(N, M) combination for optimizing EE. The results of numerical simulations are provided, and these results support our analysis.     

基于耦合的混沌神经网络建模方法

混沌状态下神经网络行为的研究是神经网络理论的一个新内容，由于它可能揭示脑活动的深层机制而广受重视，但是混沌网络信息处理能力进行大量和深入研究却遇到许多障碍，其问题之一是难以为网络系统选择适当的非线性参数。本文提出一种建立混沌神经网络模型的简单耦合方法，解决了选择参数的困难，计算机模拟结果表明，用该模型研究混沌状态下网络动态行为是有效的。     

Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

In this paper, the analog/RF performance of Si nanowire transistors (SNWTs) and the impact of process variation are investigated for the first time. Analog/RF figures of merit of SNWTs are studied, including transconductance efficiency g_m/I_d, intrinsic gain g_m/g_d, cutoff frequency f_t , and maximum oscillation frequency f_max. The results indicate that SNWTs exhibit superior intrinsic RF scaling capability and are suitable for low-power analog/RF applications. The impact of nanowire cross-sectional shape fluctuation that is caused by process variation is studied and found to be relatively severe, and the acceptable variation tolerance for RF integrated circuit design is given