Low temperature and strain rate dependence of fracture stress and fracture toughness on thin Fe40Ni40B20 amorphous ribbon

The fracture stress and the critical stress intensity factor of the Fe₄₀Ni₄₀B₂₀ amorphous metallic ribbons 20 μm thick were measured in the temperature range 4.2–300 K and at deformation rates from 3.3×10⁻⁶ to 1.25×10⁻³ m⁻¹ with the aim to obtain more information on the condition for the onset and development of the inhomogeneous plastic deformation and fracture.     

Investigations of high-performance GaAs solar cells grown on Ge-Si/sub 1-x/Ge/sub x/-Si substrates

High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers.     

Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra

This paper uses X-ray absorption spectroscopy to study the electronic structure of the high-k gate dielectrics including TM and RE oxides. The results are applicable to TM and rare earth (RE) silicate and aluminate alloys, as well as complex oxides comprised of mixed TM/TM and TM/RE oxides. These studies identify the nature of the lowest conduction band d^* states, which define the optical band gap, E_g, and the conduction band offset energy with respect to crystalline Si, E_B. E_g and E_B scale with the atomic properties of the TM and RE atoms providing important insights for identification high-k dielectrics that meet performance targets for advanced CMOS devices.     

Replication and bonding techniques for integrated microfluidic systems

From the technical and economic points of view, systems integration, and packaging represent a crucial step in the production of microsystems. Compared to purely silicon- or glass-based systems, the variety of materials and geometries available for purely polymer microfluidic systems is much larger, due to the outstanding material properties. Moreover, polymers may be shaped and joined by comparably simple methods. Examples are polymer microreplication as well as various bonding methods. With them, complete polymer microsystems can be integrated. In addition, a number of established, compatible processes are available for the integration of functional elements that may also be made of other materials.

     

Pulse shape optimization in dispersion-limited direct detection optical fiber links

We study the theoretical limits of optical communication channels affected by chromatic dispersion. By using as a metric the energy transfer ratio, we find the optimal transmitted pulse shape that allows the impact of dispersion to be minimized. We show that these optimized pulses perform significantly better than standard nonreturn-to-zero/on-off keying (NRZ-OOK) modulation.     

Wear Resistance of Coatings from Self‐Fluxing Alloys after Laser Doping under Dry Friction Conditions

The wear resistance of Ni–Cr–B–Si–C coatings after laser treatment with a doping covering under dry friction conditions has been investigated. The microstructure of coatings after fusion by a gas burner and a laser beam and the roughness and waviness parameters of the friction surfaces before and after wear have been investigated.     

Tunneling recombination in spatially inhomogeneous structures

Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined.     

Automatic transport plane resource discovery mechanisms for ASON/GMPLS ring networks

In this letter, we propose two novel mechanisms which enable GMPLS LMP to cope with the automatic discovery of all-optical transport planes. The feasibility of our contributions and their performances are assessed by simulations as well as experimental results over the ASON/GMPLS CARISMA field-trial     

Closed-loop optimal control-enabled piezoelectric microforce sensors

This paper presents a closed-loop optimally controlled force-sensing technology with applications in both micromanipulation and microassembly. The microforce-sensing technology in this paper is based on a cantilevered composite beam structure with embedded piezoelectric polyvinylidene fluoride (PVDF) actuating and sensing layers. In this type of sensor, the application of an external load causes deformation within the PVDF sensing layer. This generates a signal that is fed through a linear quadratic regulator (LQR) optimal servoed controller to the PVDF actuating layer. This in turn generates a balancing force to counteract the externally applied load. As a result, a closed feedback loop is formed, which causes the tip of this highly sensitive sensor to remain in its equilibrium position, even in the presence of dynamically applied external loads. The sensor's stiffness is virtually improved as a result of the equilibrium position whenever the control loop is active, thereby enabling accurate motion control of the sensor tip for fine micromanipulation and microassembly. Furthermore, the applied force can be determined in real time through measurement of the balance force.