Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

空间数据立方体的物化视图选择方法研究

针对决策支持系统(DSS)中集成空间分析能力的应用趋势，研究基于空间数据仓库的一种决策分析工具——空间在线分析处理(Spatial OLAP)，拟解决影响空间OLAP在线响应的瓶颈难点——空间数据立方体的物化问题。首先系统地提出空间OLAP的模型，然后对现有空间度量物化视图选择方法进行改进，提出了双向空间Greedy算法。实验证明．该算法在降低选择时间和求解质量两方面具有更好的表现。     

火成岩储层测井评价进展综述

十多年来,国内外火成岩储层测井评价已从交会图定性分析发展到用岩心分析资料建立裂缝性储层的测井解释模型，半定量、定量评价裂缝。成像测井和核磁测井的纵、横向分辨率高，经过地质刻度，可以较精细地识别岩性和裂缝，在解释火成岩方面有良好的效果。提高岩性识别准确率，识别复杂火成岩储层和孔隙流体，以及综合评价火成岩储层裂缝、饱和度等参数，仍然是火成岩储层测井评价所面临的难题。加强岩石物理基础实验，研究火成岩储层导电机理，系统研究火成岩储层测井评价理论，推广测井新技术在火成岩中的应用，建立统一的测井评价方法，将成为火成岩储层测井评价的发展趋势。     

1.8 V千兆以太网接收器模拟前端预均衡电路

介绍了一种用于1.8 V电源电压下的千兆以太网接收器的模拟前端预均衡电路。电路分为三个部分:预处理电路、基带漂移补偿电路和可变增益放大电路,主要实现回波消除、基带漂移补偿和电路增益自动控制等功能。为了与百兆模式兼容,提出了一种预处理电路。仿真结果表明,该电路可以很好地实现回波消除的功能,能够对由于基带漂移引起的信号失真给以补偿,可以提供16级不同的增益,并进行频率补偿。电路采用0.18μm标准CMOS工艺实现。     

Random properties of the highest level sequences of primitive sequences over Z(2/sup e/)

Using the estimates of the exponential sums over Galois rings, we discuss the random properties of the highest level sequences /spl alpha//sub e-1/ of primitive sequences generated by a primitive polynomial of degree n over Z(2/sup e/). First we obtain an estimate of 0, 1 distribution in one period of /spl alpha//sub e-1/. On the other hand, we give an estimate of the absolute value of the autocorrelation function |C/sub N/(h)| of /spl alpha//sub e-1/, which is less than 2/sup e-1/(2/sup e-1/-1)/spl radic/3(2/sup 2e/-1)2/sup n/2/+2/sup e-1/ for h/spl ne/0. Both results show that the larger n is, the more random /spl alpha//sub e-1/ will be.     

加入WTO后对中国会计业的影响

中国政府已于2001年12月正式加入做为当代世界规范和经济贸易关系最具权威的国际性组织WTO.加入WTO,对中国来说既是机遇,同时又是挑战,它的影响是全面的、全方位的.而对于中国会计业的影响也是深刻的,中国经济、中国企业要走向世界,中国的会计业也必须直面世界,按国际惯例行事,因此,深刻研究和分析加入WTO后对中国会计业的冲击、挑战以制定相应的政策、方针、准则就显得非常的迫切.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.