Effects of various post-treatments on carbon nanotube films for reliable field emission

In this report, the FE characteristics of carbon nanotubes (CNTs) treated using both thermal annealing and mechanical coatings on the as-grown CNTs systematically studied. It was found that in the high temperature annealed samples, CNTs were attacked at its root during annealing due to a small amount of oxygen, and were pulled out of the substrate in places after FE measurements because of the contact resistance. However, for the mechanically coated samples both with spin on glass (SOG) and polymethyl methacrylate (PMMA), CNTs were found to be nearly intact after FE measurements and showed reliable FE characteristics over repeatable voltage scan. The reliability of CNTs during FE could be owing to the strong adhesion of CNTs to the substrate both by SOG and PMMA coatings.     

Reliability-based failure cause assessment of collapsed bridge during construction

Until now, in many forensic reports, the failure cause assessments are usually carried out by a deterministic approach so far. However, it may be possible for the forensic investigation to lead to unreasonable results far from the real collapse scenario, because the deterministic approach does not systematically take into account any information on the uncertainties involved in the failures of structures.Reliability-based failure cause assessment (reliability-based forensic engineering) methodology is developed which can incorporate the uncertainties involved in structural failures and structures, and to apply them to the collapsed bridge in order to identify the most critical failure scenario and find the cause that triggered the bridge collapse. Moreover, to save the time and cost of evaluation, an algorithm of automated event tree analysis (ETA) is proposed and possible to automatically calculate the failure probabilities of the failure events and the occurrence probabilities of failure scenarios. Also, for reliability analysis, uncertainties are estimated more reasonably by using the Bayesian approach based on the experimental laboratory testing data in the forensic report. For the applicability, the proposed approach is applied to the Hang-ju Grand Bridge, which collapsed during construction, and compared with deterministic approach.     

Compact Dipole Antenna for Terrestrial Digital Multimedia Broadcasting Service

A compact dipole antenna for the terrestrial digital multimedia broadcasting (TDMB) application is presented. The length of the antenna is about 0.06λ at the TDMB resonance frequency of 190 MHz. Miniaturization of the antenna is achieved by using meander structures and lumped elements. The proposed antenna has two resonance frequencies and covers the TDMB band from 174 MHz to 216 MHz in Korea. The antenna has good impedance bandwidth and radiation characteristics for the TDMB. The experimental results of the designed dipole antenna are presented and analyzed.     

BioFET sensor for detection of albumin in urine

Characterisation of a BioFET for detection of albumin in a mixture of human urine is presented. To avoid electrolyte effect of the urine, it was measured in PBS (phosphate buffer saline) at a fixed pH after albumin binding. The drain current was modulated by the albumin bound to the anti-albumin immobilised on the gate surface of the BioFET. The current variation ratio was likely to be proportional to the concentration of the albumin in the range 50-250 mg/1. The results show the feasibility of the BioFET as a urinary albumin sensor.     

An accurate and practical buffer allocation model for the buffer cache based on marginal gains

A new dynamic buffer allocation strategy based on the notion of marginal gains is presented for the buffer cache that is used by the operating system to store frequently accessed disk blocks in main memory, and the performance of the proposed strategy is compared with those of previous allocation strategies. In the proposed strategy, marginal gain values are predicted by exploiting functions that approximate the expected number of buffer hits per unit time. Experimental results from both trace-driven simulation and an actual implementation in the FreeBSD operating system show that the proposed strategy accurately predicts the marginal gain values for various workloads resulting in significantly improved buffer hit ratios.     

Austenitizing treatment influence on the electrochemical corrosion behavior of 0.3C-14Cr-3Mo martensitic stainless steel

Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M₂₃C₆ carbide which acts as preferential sites for pitting corrosion.     

High Gd Concentration GaGdN Grown at Low Temperatures

GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism occurs in the low-temperature-growth GaGdN.     

Floating-patch MEMS antennas on HRS substrate for millimetre-wave applications

Novel floating-patch micro-electro-mechanical system (MEMS) antennas are proposed for millimetre-wave applications. The floating-patch MEMS antennas are fabricated on a high resistivity silicon (HRS) substrate using surface micromachining technology. Simulation and experimental results for reflection coefficients and radiation patterns are presented.     

A transmit MIMO scheme with frequency domain pre-equalization for wireless frequency selective channels

In this paper, we introduce a transmit multiple-input multiple-output (MIMO) scheme with frequency domain pre-equalization for a multipath or frequency selective channel. In this scheme, MIMO processing in the frequency domain is performed at the transmitter or base station so that the receiver or mobile station only requires limited processing. This scheme provides high data rates and also inherits from the frequency domain equalization the property of relatively low complexity in severe multipath environments. The MIMO transmit processing is derived by minimizing the minimum mean square errors (MMSE), and expressions for the signal-to-interference-plus-noise ratio and error probability based on the Gaussian approximation of the interference term are provided. Some important associated issues, such as channel errors and computational complexity, are also investigated. Numerical simulations are also provided and these demonstrate the improved performance of our proposed scheme compared to other transmit MIMO schemes. In particular, they show that the proposed system can attain multipath or frequency diversity of the channel.     

Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs

Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that of PMOS negative BTI (NBTI), and limited the lifetime of HfO/sub 2/ MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved the interface quality by passivating the interfacial states with hydrogen, BTI behaviors were not strongly affected by the technique. Charge pumping measurements were extensively used to investigate the nature of the BTI degradation, and it was found that V/sub t/ degradation of NMOS PBTI was primarily caused by charge trapping in bulk HfO/sub 2/ rather than interfacial degradation. Deuterium (D/sub 2/) annealing was found to be an excellent technique to improve BTI immunity as well as to enhance the mobility of HfO/sub 2/ MOSFETs.