带能量回馈的电动车交流驱动系统

提出了一种刹车或减速时能量可回馈的电动车交流驱动系统 ,延长了车辆行驶里程 ,提高了能量利用率 ,降低了系统造价。实验结果证明了系统的可行性     

FDDI网络适配器ODI驱动程序的原理与实现

本文首先简要介绍了开放数据链路接口ＯＤＩ的结构模型和基本原理，并在此 论述了Ｎｏｖｅｌｌ网中ＦＤＤＩ网络适配器ＯＤＩ驱动程序的实现技术。     

组合励磁永磁同步发电机主发电机的设计方法

提出了组合励磁稀土永磁同步发电机(以下简称HESG)主发电机部分的一种设计方法，该方法可以定量调控发电机外特性的电压变化率，是设计HESG的基础，也能单独设计稀土永磁同步发电机。通过样机的实验验证，说明设计方法是成功有效的。     

热机械法制备超细弥散分布钨铜复合粉末

本研究在对钨铜粉末共还原的基础上设计了一种热机械法来制备超细弥散分布钨铜复合粉末。对粉末通过SEM、XRD、粒度分析、氧含量及其烧结性能的研究 ,结果显示 :通过对钨铜高温氧化物粉末的短时快速球磨 (约 3～ 10小时 )后 ,复合粉末可在较低的温度下还原彻底 ,而且粉末粒度细小 (0 2 μm左右 ) ,分布均匀 ,比表面增加 ,具有极高的烧结性能。对比机械合金化工艺直接制备钨铜复合材料工艺得知 :对氧化物粉末进行了短时高能球磨 ,快速细化了氧化物粉末粒度 (<1μm) ,降低了粉末还原温度 (6 5 0℃ ) ,制备出高分散的超细钨铜复合粉末 (<1μm) ,在较低的烧结温度 (12 0 0℃ )下得到相对密度为 99 5 %、热导率为 2 0 5W·m- 1 ·K- 1 的钨铜复合材料制品。     

Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.     

Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) system.Rutherford backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.     

用灰色系统理论预测环形通道内液钠的临界热流密度

用灰色系统理论对在两台液钠沸腾实验回路上测得的实验数据进行了钠沸腾临界热流密度（CHF）值影响因素的灰色相关分析,并用GM（1,1）模型对CHF进行预测,选用GM（1,h)模型对CHF进行了建模,计算及预测结果与实验值符合较好。     

半导体陶瓷致冷材料的性能与结构

采用新的陶瓷工艺技术,在气氛保护条件下,通过固相烧结反应法制备出温差电多晶材料。对膺三元固溶体化合物 P 型(72%Sb_2Te_3+25%Bi_2Te_3+3%Sb_2Se_3)和 N 型(90%Bi_2Te_3+5%Sb_2Te_3+5%Sb_2Se_3)的掺杂陶瓷样品进行了性能与结构研究。找到了最佳工艺制度。样品性能参数为:N 型:α=186μV/K σ=1250Ω~(-1)·cm~(-1) λ=14.7mW/(cm.K) Z=2.9×10~(-3)/KP 型:α=220μV/K σ=900 Ω~(-1)·cm~(-1) λ=14.0mW/(cm.K) Z=3.1×10~(-3)/K