Resolution-effective diameters for asymmetric-knife-edge pinhole collimators

The effects of penetration are included in the formulas for the prediction of the resolution of pinhole collimators through the use of effective diameters. Expressions of the resolution-effective diameter for pinholes with a double-knife-edge (DKE) profile are available in the literature. In this paper the expressions applicable to asymmetric-knife-edge (AKE) profiles, which include the important case of the single-knife-edge (SKE), are presented. Results indicate that the simplest methods that are still accurate in the calculation of DKE effective diameters do not produce in general formulas with similar accuracy for AKE profiles, due to increased susceptibility to penetration. Especially at high energy (365 keV), for the SKE case more advanced formulas are necessary and were, therefore, derived.     

DSP系统需要特殊的电源管理技术

在便携式的应用中,电源的效率决定着工作时间。举个例子,当你在飞越海洋的客机上使用便携式DVD播放器时,电池的使用时间将会变得十分的重要。电源的效率是由硬件的设计,器件的选择,以及基于软件的功率管理技术来共同决定的。     

Scalability study of the ad hoc on‐demand distance vector routing protocol

As mobile networking continues to experience increasing popularity, the need to connect large numbers of wireless devices will become more prevalent. Many recent proposals for ad hoc routing have certain characteristics that may limit their scalability to large networks. This paper examines five different combinations of modifications that may be incorporated into virtually any on‐demand protocol in order to improve its scalability. The scalability of current on‐demand routing protocols is evaluated through the selection of a representative from this class of protocols. The performance of the un‐modified on‐demand protocol is compared against that of it combined with each of the scalability modifications. Each scheme's behavior is analyzed in networks as large as 10,000 nodes through detailed simulation. Based on the observations, conclusions are drawn as to the expected scalability improvement that can be achieved by each modification. Copyright © 2003 John Wiley & Sons, Ltd.     

Hydration-Induced Void-Containing Hydrogels for Encapsulation and Sustained Release of Small Hydrophilic Molecules

Efficient encapsulation and sustained release of small hydrophilic molecules from traditional hydrogel systems are challenging due to the large mesh size of 3D networks and high water content. Furthermore, the encapsulated molecules are prone to early release from the hydrogel prior to use, resulting in a short shelf life of the formulation. Here, a hydration-induced void-containing hydrogel (HVH) based on hyperbranched polyglycerol-poly(propylene oxide)-hyperbranched polyglycerol (HPG-PPG-HPG) as a robust and efficient delivery system is presented for small hydrophilic molecules. Specifically, after the HPG-PPG-HPG is incubated overnight at 4 °C in the drug solution, it is hydrated into a hydrogel containing micron-sized voids, which can encapsulate hydrophilic drugs and achieve 100% drug encapsulation efficiency. In addition, the voids are surrounded by a densely packed polymer matrix, which restricts drug transport to achieve sustained drug release. The hydrogel/drug formulation can be stored for several months without changing the drug encapsulation and release properties. HVH hydrogels are injectable due to shear thinning properties. In rats, a single injection of the HPG-PPG-HPG hydrogel containing 8 µg of tetrodotoxin (TTX) produces sciatic nerve block lasting up to 10 h without any TTX-related systemic toxicity nor local toxicity to nerves and muscles.     

Evaluation of Thermal Resistance Matrix Method for an Embedded Power Electronic Module

Thermal characterization provides data on the thermal performance of electronic components under given cooling conditions. The most common thermal characterization parameter used to characterize the behavior of electronic components is the thermal resistance. In this work, experiments are conducted to obtain thermal characterization data for different chips in a multichip package. Using this data, it is shown that the assumption of a linear temperature rise with input power is valid within the expected range of operation of the electronic module. Secondly, the applicability of a resistance matrix superposition methodology to the packaging structure of an integrated power electronic module is evaluated. The temperatures and the associated uncertainties involved in using the resistance matrix superposition method are compared to those obtained directly by powering all chips. It is shown that for any arbitrary power losses from the chips, the resistance matrix superposition method can predict the temperatures of a multichip package with reasonable accuracy for temperature rise up to 50degC.     

Antenna pattern comparison between an outdoor cylindrical near-field test facility and an indoor spherical near-field antenna test facility

A new spherical near-field probe-positioning device has been designed and constructed, consisting of a large 5.0 meter fixed arc. This arc has been installed in a near-field test facility, located at Alenia Marconi Systems, on the Isle of Wight, UK. As part of the near-field qualification, testing was performed on a ground-based radar antenna. The resultant patterns were compared against measurements collected on the same antenna on a large outdoor cylindrical near-field test facility, also located on the Isle of Wight [F. Steiner et al., Jan. 1994]. These measurements included multiple-frequency measurements and multiple pattern comparisons. This paper summarizes the results obtained as part of the measurement program, and includes discussions on the error budgets for the two ranges, along with a discussion of the mutual error budget between the two ranges.     

Subpicosecond Domain Switching in Discrete Regions of Pb(Zr0.35Ti0.65)O3 Thick Films

The time dependence of the domain switching current density, J_sw(t), under pulsed voltages on a ferroelectric parallel‐plate capacitor is the consequence of region‐by‐region polarization reversals across the film. As the distributive coercive voltage of domain nucleation increases from zero to the maximum applied voltage during the capacitor charging time, J_sw(t) is proportional to the domain switching speed at each time. By transforming the spatially inhomogeneous domain nucleation distribution into a temporal distribution of coercive fields (E_c), a local lnJ_sw versus E_c^?1 plot is derived for each domain, following the Merz equation. This provides insight into the independent domain switching dynamics at different nucleation sites in Pb(Zr_0.35Ti_0.65)O₃ thick films over a large current range. Although the activation field of the slope of the lnJ_sw(t) versus E_c^?1 plot varies with film area and temperature, all the plots extrapolate to a single point (J₀, E₀) from which the ultimate domain switching current density of J₀ =1.4 × 10⁸ A cm^?2 at the highest field of E₀ = 0.20‐0.25 MV cm^?1 is derived. Unexpectedly, J₀ and E₀ are independent of the film thickness and area, after correction for a small interfacial‐layer effect. This analysis provides rigorous evidence for nucleation rate‐limited domain switching with a subpicosecond nucleation time and the relative unimportance of domain forward‐growth time across film thicknesses between 0.14 and 2 μm. This work paves the way to improve the efficiency of ferroelectric thick‐film functionality in electronic and optoelectronic devices with ultrafast clock rates.     

Volume rendering of segmented image objects

This paper describes a new method of combining ray-casting with segmentation. Volume rendering is performed at interactive rates on personal computers, and visualizations include both "superficial" ray-casting through a shell at each object's surface and "deep" ray-casting through the confines of each object. A feature of the approach is the option to smoothly and interactively dilate segmentation boundaries along all axes. This ability, when combined with selective "turning off" of extraneous image objects, can help clinicians detect and evaluate segmentation errors that may affect surgical planning. We describe both a method optimized for displaying tubular objects and a more general method applicable to objects of arbitrary geometry. In both cases, select three-dimensional points are projected onto a modified z buffer that records additional information about the projected objects. A subsequent step selectively volume renders only through the object volumes indicated by the z buffer. We describe how our approach differs from other reported methods for combining segmentation with ray-casting, and illustrate how our method can be useful in helping to detect segmentation errors.     

Modelling methodology for thermal analysis of hot solder dip process

The shift of electronics industry towards the use of lead-free solders in components manufacturing brought also the challenge of addressing the problem of tin whiskers. Manufacturers of high reliability and safety critical equipment in sectors such as defence and aerospace rely increasingly on the use of commercial-of-the-shelf (COTS) electronic components for their products and systems. The use of COTS components with lead-free solder plated terminations comes with the risks for their long term reliability associated with tin whisker growth related failures. In the case of leaded type electronic components such as Quad Flat Package (QFP) and Small Outline Package (SOP), one of the promising solutions to this problem is to “re-finish” the package terminations by replacing the lead-free solder coatings on the leads with conventional tin–lead solder. This involves subjecting the electronic components to a post-manufacturing process known as Hot Solder Dip (HSD). One of the main concerns for adopting HSD (refinishing) as a strategy to the tin whisker problem is the potential risk for thermally induced damage in the components when subjected to this process.     

Development of the high-pressure electro-dynamic gradient crystal-growth technology for semi-insulating CdZnTe growth for radiation detector applications

The high-pressure electro-dynamic gradient (HP-EDG) crystal-growth technology has been recently developed and introduced at eV PRODUCTS to grow large-volume, semi-insulating (SI) CdZnTe single crystals for room-temperature x-ray and gamma-ray detector applications. The new HP growth technology significantly improves the downstream CdZnTe device-fabrication yield compared to earlier versions of the HP crystal-growth technology because of the improved structural and charge-transport properties of the CdZnTe ingots. The new state-of-the-art, HP-EDG crystal-growth systems offer exceptional flexibility and thermal and mechanical stability and allow the growth of high-purity CdZnTe ingots. The flexibility of the multi-zone heater system allows the dynamic control of heat flow to optimize the growth-interface shape during crystallization. This flexibility combined with an advanced control system, improved system diagnostics, and realistic heat-transport modeling provides an excellent platform for continuing process development. Initial results on large-diameter (140 mm), SI Cd_1−xZn_xTe (x=0.1) ingots grown in low temperature gradients with the HP-EDG technique show reduced defect density and complete elimination of ingot cracking. The increased single-crystal yield combined with the improved charge transport allows the fabrication of large-volume, high-sensitivity, high energy-resolution detector devices at increased yield. The CdZnTe ingots grown to date produced large-volume crystals (≥1cm³) with electron mobility-lifetime product (μτ_e) in the (3–7) × 10⁻³ cm²/V range. The lower-than-desired charge-transport uniformity of the HP-EDG CdZnTe ingots is associated with the high density of Te inclusions formed in the ingots during crystallization. The latest process-development efforts show a reduction in the Te-inclusion density, an increase of the charge-transport uniformity, and improved energy resolution of the large-volume detectors fabricated from these crystals.