Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450°C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500°C. The first formed phase is Ti₅Si₃ in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500°C, the Ti₅Si₄ phase and C49 TiSi₂ phase formed in the regions close to Ti films and Si substrates, respectively.     

An uplink CDMA system architecture with diverse QoS guarantees forheterogeneous traffic

The uplink access control problems for cellular code-division multiple-access (CDMA) systems that service heterogeneous traffic with various types of quality-of-service (QoS) and use multicode CDMA to support variable bit rates are addressed. Considering its distinct QoS requirements, class-I real-time traffic (e.g., voice and video) is differentiated from class-II non-real-time traffic (e.g., data). Connection-oriented transmission is achieved by assigning mobile-oriented code channels for class-I traffic, where each corresponding mobile needs to pass an admission test. Class-II traffic is transmitted in a best-effort manner through a transmission-rate request access scheme which utilizes the bandwidth left unused by class-I traffic. Whenever a mobile has class-II messages to transmit, the mobile requests code channels via a base station-oriented transmission-request code channel, then, according to the base station scheduling, the transmission is scheduled and permitted. Addressed are the admission test for class-I connections, transmission power allocation, and how to maximize the aggregate throughput for class-II traffic. The admission region of voice and video connections and the optimum target signal-to-interference ratio of class-II traffic are derived numerically. The performance of class-II traffic transmissions in terms of average delay is also evaluated and discussed     

Clock multiplier using digital CMOS standard cells for high-speeddigital communication systems

The authors propose and evaluate the performance of a 2^N times clock multiplier that controls memory components for high-speed data communications. To improve the reliability of the circuit, a symmetric circuit structure is used, while to verify circuit operation by means of a simple method, an MVU estimator is found from simulation data. The proposed circuit can provide clock rates, which are usually required in the multiple phase shift keying (MPSK) or multiple quadrature amplitude modulation (MQAM) modulation schemes, of 2 to 2^N times that of the input clock     

Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

We report on a reverse stamping method to produce via-holes in circuits comprising acene-based top-gate organic field-effect transistors (OFETs) having a CYTOP/Al₂O₃ (by atomic layer deposition) bilayer gate dielectric. This method relies on the weak adhesive force that exists between a small molecule acene film and a polymer to enable easy delamination of the bilayer gate dielectric by using a PDMS stamp. We demonstrate the effectiveness of this method by fabricating simple circuits using top-gate triisopropylsilylethynyl pentacene (TIPS-pentacene)/poly (triarylamine) (PTAA) OFETs.     

Improved Shamir's CRT‐RSA Algorithm: Revisit with the Modulus Chaining Method

RSA signature algorithms using the Chinese remainder theorem (CRT‐RSA) are approximately four‐times faster than straightforward implementations of an RSA cryptosystem. However, the CRT‐RSA is known to be vulnerable to fault attacks; even one execution of the algorithm is sufficient to reveal the secret keys. Over the past few years, several countermeasures against CRT‐RSA fault attacks have tended to involve additional exponentiations or inversions, and in most cases, they are also vulnerable to new variants of fault attacks. In this paper, we review how Shamir's countermeasure can be broken by fault attacks and improve the countermeasure to prevent future fault attacks, with the added benefit of low additional costs. In our experiment, we use the side‐channel analysis resistance framework system, a fault injection testing and verification system, which enables us to inject a fault into the right position, even to within 1 μs. We also explain how to find the exact timing of the target operation using an Atmega128 software board.     

Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor configuration

We observe bulk-like hole transport in amorphous organic semiconductors in a thin film transistor (TFT) configuration. Five different organic hole transporters (HTs) commonly used in organic light-emitting diodes are investigated. When these HTs are deposited on SiO₂ gate dielectric layer, the TFT mobilities are 1–2 orders of magnitude smaller than those obtained from bulk films (3–8 μm) using time-of-flight (TOF) technique. The reduction of hole mobilities can be attributed to the interactions between the organic HTs and the polar SiO bonds on the gate dielectric layer. Detailed temperature dependence studies, employing the Gaussian disorder model, indicate that the SiO₂ gate dielectric contributes between 60 and 90 meV of energetic disorder in the charge hopping manifold. Besides SiO₂ gate dielectric, similar effects can also be observed for other polar insulators including polymeric PMMA and BCB, or HMDS-modified SiO₂. However, when a common non-polar polymer, polystyrene (PS), is employed as the dielectric layer, the dipolar energetic disorder becomes negligible. Holes effectively experience bulk-like transport on the PS gate dielectric surface. TFT mobilities extracted from all five organic HTs are in excellent agreements with TOF mobilities. The present study should have broad applications in the transport characterization of amorphous organic semiconductors.     

Opportunistic Space-Division Multiple Access With Beam Selection

In this paper, a novel transmission technique for the multiple-input multiple-output (MIMO) broadcast channel is proposed that allows simultaneous transmission to multiple users with limited feedback from each user. During a training phase, the base station modulates a training sequence on multiple sets of randomly chosen orthogonal beamforming vectors. Each user sends the index of the best beamforming vector and the corresponding signal-to-interference-plus-noise ratio for that set of orthogonal vectors back to the base station. The base station opportunistically determines the users and corresponding orthogonal vectors that maximize the sum capacity. Based on the capacity expressions, the optimal amount of training to maximize the sum capacity is derived as a function of the system parameters. The main advantage of the proposed system is that it provides throughput gains for the MIMO broadcast channel with a small feedback overhead, and provides these gains even with a small number of active users. Numerical simulations show that a 20% gain in sum capacity is achieved (for a small number of users) over conventional opportunistic space division multiple access, and a 100% gain (for a large number of users) over conventional opportunistic beamforming when the number of transmit antennas is four.     

CMOS Outphasing Class-D Amplifier With Chireix Combiner

This letter presents a CMOS outphasing class-D power amplifier (PA) with a Chireix combiner. Two voltage-mode class-D amplifiers used in the outphasing system were designed and implemented with a 0.18-mum CMOS process. By applying the Chireix combiner technique, drain efficiency of the outphasing PA for CDMA signals was improved from 38.6% to 48% while output power was increased from 14.5 to 15.4 dBm with an adjacent channel power ratio of -45 dBc.     

Implementation and characterization of flash-based hardware security primitives for cryptographic key generation

Hardware security primitives, also known as physical unclonable functions (PUFs), perform innovative roles to extract the randomness unique to specific hardware. This paper proposes a novel hardware security primitive using a commercial off-the-shelf flash memory chip that is an intrinsic part of most commercial Internet of Things (IoT) devices. First, we define a hardware security source model to describe a hardware-based fixed random bit generator for use in security applications, such as cryptographic key generation. Then, we propose a hardware security primitive with flash memory by exploiting the variability of tunneling electrons in the floating gate. In accordance with the requirements for robustness against the environment, timing variations, and random errors, we developed an adaptive extraction algorithm for the flash PUF. Experimental results show that the proposed flash PUF successfully generates a fixed random response, where the uniqueness is 49.1%, steadiness is 3.8%, uniformity is 50.2%, and min-entropy per bit is 0.87. Thus, our approach can be applied to security applications with reliability and satisfy high-entropy requirements, such as cryptographic key generation for IoT devices.     

Optoelectronic and microwave transmission characteristics of indium solder bumps for low-temperature flip-chip applications

This paper describes low-temperature flip-chip bonding for both optical interconnect and microwave applications. Vertical-cavity surface-emitting laser (VCSEL) arrays were flip-chip bonded onto a fused silica substrate to investigate the optoelectronic characteristics. To achieve low-temperature flip-chip bonding, indium solder bumps were used, which had a low melting temperature of 156.7/spl deg/C. The current-voltage (I-V) and light-current (L-I) characteristics of the flip-chip bonded VCSEL arrays were improved by Ag coating on the indium bump. The I-V and L-I curves indicate that optical and electrical performances of Ag-coated indium bumps are superior to those of uncoated indium solder bumps. The microwave characteristics of the solder bumps were investigated by using a flip-chip-bonded coplanar waveguide (CPW) structure and by measuring the scattering parameter with an on-wafer probe station for the frequency range up to 40 GHz. The indium solder bumps, either with or without the Ag coating, provided good microwave characteristics and retained the original characteristic of the CPW signal lines without degradation of the insertion and return losses by the solder bumps.