Widely Tunable Morphologies in Block Copolymer Thin Films Through Solvent Vapor Annealing Using Mixtures of Selective Solvents

Thin films of block copolymers are extremely attractive for nanofabrication because of their ability to form uniform and periodic nanoscale structures by microphase separation. One shortcoming of this approach is that to date the design of a desired equilibrium structure requires synthesis of a block copolymer de novo within the corresponding volume ratio of the blocks. In this work, solvent vapor annealing in supported thin films of poly(2‐hydroxyethyl methacrylate)‐block‐poly(methyl methacrylate) [PHEMA‐b‐PMMA] by means of grazing incidence small angle X‐ray scattering (GISAXS) is investigated. A spin‐coated thin film of a lamellar block copolymer is solvent vapor annealed to induce microphase separation and improve the long‐range order of the self‐assembled pattern. Annealing in a mixture of solvent vapors using a controlled volume ratio of solvents, which are chosen to be preferential for each block, enables selective formation of ordered lamellae, gyroid, hexagonal, or spherical morphologies from a single‐block copolymer with a fixed volume fraction. The selected microstructure is then kinetically trapped in the dry film by rapid drying. This paper describes what is thought to be the first reported case where in situ methods are used to study the transition of block copolymer films from one initial disordered morphology to four different ordered morphologies, covering much of the theoretical diblock copolymer phase diagram.     

Metallic Glass as a Mechanical Material for Microscanners

Microelectromechanical system (MEMS) actuators essentially have movable silicon structures where the mechanical motion can be activated electronically. The microscanner is one of the most successfully commercialized MEMS devices which are widely used for collecting optical information, manipulating light, and displaying images. While silicon is abundant, it is also brittle and stiff and when microprocessed, defects are not uncommon. These defects result in weakness under torsional stress and this has been the key factor limiting the scanning performance of the microscanner. Here a metallic glass (MG)‐based microscanner is reported with MG as the material for the moving torsion bars. The low elastic modulus, high fracture toughness, and high strength of MG offers, for the first time, an ultralarge rotating angle of 146° with power consumption lowered to the microwatt range, and a smaller driving force and better actuation performance, than conventional single crystal silicon and polycrystalline silicon. The high spatial resolution and large scanning field of the MG‐based microscanner are demonstrated in the tomographic imaging of a human finger. This development of an MG‐based MEMS possibly opens a new field of low‐powered MEMS devices with extreme actuation and enhanced sensing.     

Hetero‐Nanonet Rechargeable Paper Batteries: Toward Ultrahigh Energy Density and Origami Foldability

Forthcoming smart energy era is in strong pursuit of full‐fledged rechargeable power sources with reliable electrochemical performances and shape versatility. Here, as a naturally abundant/environmentally friendly cellulose‐mediated cell architecture strategy to address this challenging issue, a new class of hetero‐nanonet (HN) paper batteries based on 1D building blocks of cellulose nanofibrils (CNFs)/multiwall carbon nanotubes (MWNTs) is demonstrated. The HN paper batteries consist of CNF/MWNT‐intermingled heteronets embracing electrode active powders (CM electrodes) and microporous CNF separator membranes. The CNF/MWNT heteronet‐mediated material/structural uniqueness enables the construction of 3D bicontinuous electron/ion transport pathways in the CM electrodes, thus facilitating electrochemical reaction kinetics. Furthermore, the metallic current collectors‐free, CNF/MWNT heteronet architecture allows multiple stacking of CM electrodes in series, eventually leading to user‐tailored, ultrathick (i.e., high‐mass loading) electrodes far beyond those accessible with conventional battery technologies. Notably, the HN battery (multistacked LiNi_0.5Mn_1.5O₄ (cathode)/multistacked graphite (anode)) provides exceptionally high‐energy density (=226 Wh kg^?1 per cell at 400 W kg^?1 per cell), which surpasses the target value (=200 Wh kg^?1 at 400 W kg^?1) of long‐range (=300 miles) electric vehicle batteries. In addition, the heteronet‐enabled mechanical compliance of CM electrodes, in combination with readily deformable CNF separators, allows the fabrication of paper crane batteries via origami folding technique.     

HV‐SoP Technology for Maskless Fine‐Pitch Bumping Process

Recently, we have witnessed the gradual miniaturization of electronic devices. In miniaturized devices, flip‐chip bonding has become a necessity over other bonding methods. For the electrical connections in miniaturized devices, fine‐pitch solder bumping has been widely studied. In this study, high‐volume solder‐on‐pad (HV‐SoP) technology was developed using a novel maskless printing method. For the new SoP process, we used a special material called a solder bump maker (SBM). Using an SBM, which consists of resin and solder powder, uniform bumps can easily be made without a mask. To optimize the height of solder bumps, various conditions such as the mask design, oxygen concentration, and processing method are controlled. In this study, a double printing method, which is a modification of a general single printing method, is suggested. The average, maximum, and minimum obtained heights of solder bumps are 28.3 μm, 31.7 μm, and 26.3 μm, respectively. It is expected that the HV‐SoP process will reduce the costs for solder bumping and will be used for electrical interconnections in fine‐pitch flip‐chip bonding.     

Mobile Small Cells for Further Enhanced 5G Heterogeneous Networks

A heterogeneous network (HetNet) is a network topology composed by deploying multiple HetNets under the coverage of macro cells (MCs). It can improve network throughput, extend cell coverage, and offload network traffic; for example, the network traffic of a 5G mobile communications network. A HetNet involves a mix of radio technologies and various cell types working together seamlessly. In a HetNet, coordination between MCs and small cells (SCs) has a positive impact on the performance of the networks contained within, and consequently on the overall user experience. Therefore, to improve user‐perceived service quality, HetNets require high‐efficiency network protocols and enhanced radio technologies. In this paper, we introduce a 5G HetNet comprised of MCs and both fixed and mobile SCs (mSCs). The featured mSCs can be mounted on a car, bus, or train and have different characteristics to fixed SCs (fSCs). In this paper, we address the technical challenges related to mSCs. In addition, we analyze the network performance under two HetNet scenarios — MCs and fSCs, and MCs and mSCs.     

Dithienocarbazole‐Based Ladder‐Type Heptacyclic Arenes with Silicon,Carbon, and Nitrogen Bridges: Synthesis,Molecular Properties,Field‐Effect Transistors,and Photovoltaic Applications

A new class of ladder‐type dithienosilolo‐carbazole ( DTSC ), dithienopyrrolo‐carbazole ( DTPC ), and dithienocyclopenta‐carbazole ( DTCC ) units is developed in which two outer thiophene subunits are covalently fastened to the central 2,7‐carbazole cores by silicon, nitrogen, and carbon bridges, respectively. The heptacyclic multifused monomers are polymerized with the benzothiadiazole ( BT ) acceptor by palladium‐catalyzed cross‐coupling to afford three alternating donor‐acceptor copolymers poly(dithienosilolo‐carbazole‐alt‐benzothiadiazole) ( PDTSCBT) , poly(dithienocyclopenta‐carbazole‐alt‐benzothiadiazole) ( PDTCCBT), and poly(dithienopyrrolo‐carbazole‐alt‐benzothiadiazole) ( PDTPCBT) . The silole units in DTSC possess electron‐accepting ability that lowers the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels of PDTSCBT , whereas stronger electron‐donating ability of the pyrrole moiety in DTPC increases the HOMO and LUMO energy levels of PDTPCBT . The optical bandgaps (E_g^opt) deduced from the absorption edges of thin film spectra are in the following order: PDTSCBT (1.83 eV) > PDTCCBT (1.64 eV) > PDTPCBT (1.50 eV). This result indicated that the donor strength of the heptacyclic arenes is in the order: DTPC > DTCC > DTSC . The devices based on PDTSCBT and PDTCCBT exhibited high hole mobilities of 0.073 and 0.110 cm² V^?1 s^?1, respectively, which are among the highest performance from the OFET devices based on the amorphous donor‐acceptor copolymers. The bulk heterojunction photovoltaic device using PDTSCBT as the p‐type material delivered a promising efficiency of 5.2% with an enhanced open circuit voltage, V_oc, of 0.82 V.     

Continuous Control of Charge Transport in Bi‐Deficient BiFeO3 Films Through Local Ferroelectric Switching

It is demonstrated that electric transport in Bi‐deficient Bi_1‐δFeO₃ ferroelectric thin films, which act as a p‐type semiconductor, can be continuously and reversibly controlled by manipulating ferroelectric domains. Ferroelectric domain configuration is modified by applying a weak voltage stress to Pt/Bi_1‐δFeO₃/SrRuO₃ thin‐film capacitors. This results in diode behavior in macroscopic charge‐transport properties as well as shrinkage of polarization‐voltage hysteresis loops. The forward current density depends on the voltage stress time controlling the domain configuration in the Bi_1‐δFeO₃ film. Piezoresponse force microscopy shows that the density of head‐to‐head/tail‐to‐tail unpenetrating local domains created by the voltage stress is directly related to the continuous modification of the charge transport and the diode effect. The control of charge transport is discussed in conjunction with polarization‐dependent interfacial barriers and charge trapping at the non‐neutral domain walls of unpenetrating tail‐to‐tail domains. Because domain walls in Bi_1‐δFeO₃ act as local conducting paths for charge transport, the domain‐wall‐mediated charge transport can be extended to ferroelectric resistive nonvolatile memories and nanochannel field‐effect transistors with high performances conceptually.     

Mobile device integration of a fingerprint biometric remote authentication scheme

Various user authentication schemes with smart cards have been proposed. Generally, researchers implicitly assume that the contents of a smart card cannot be revealed. However, this is not true. An attacker can analyze the leaked information and obtain the secret values in a smart card. To improve on this drawback, we involve a fingerprint biometric and password to enhance the security level of the remote authentication scheme Our scheme uses only hashing functions to implement a robust authentication with a low computation property. Copyright © 2011 John Wiley & Sons, Ltd.