The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

Comment on new differential flip-flops from Yuan and Svensson

A family of differential latches has recently been proposed by Yuan and Svensson [1996]. The author shows that the proposed flip-flops using the dynamic slave latch suffer from a poor logic-level zero in the presence of glitches on the data inputs     

Turbo codes with unequal error protection

The authors present a new simple method for designing turbo codes with unequal error protection (UEP). An example is given to provide numerical evidence of its effectiveness     

Location of Aluminum in Substituted Calcium Silicate Hydrate (C-S-H) Gels as Determined by 29Si and 27Al NMR and EELS

Solid-state ²⁷Al and ²⁹Si magic angle spinning NMR spectroscopy has been combined with electron energy loss spectroscopy carried out in the transmission electron microscope to determine the location of Al substituting in a semicrystalline C-S-H gel present in a hydrated synthetic slag glass. The gel is found to contain mainly pentameric silicate chains in which the central silicon is substituted by aluminum.